Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

Ohsato, K.; Yoshimasu, Toshihiko

doi:10.1109/lmwc.2004.827911

Cited by 16 publications

(9 citation statements)

References 5 publications

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“…At the frequencies of interest, the load impedance is represented as an inductive element , the magnitude of the effective transconductance is given in ( 6), shown at the bottom of this page, by neglecting the real part of for simplicity. For , the expression in ( 6) is approximated by (7) where (8) For circuit implementations, is much higher than the operating frequency and the effective transconductance is simply as the value of is sufficiently large. The second stage of the folded cascode LNA is realized by a common-gate pMOS transistor and its small-signal equivalent circuit is shown in Fig.…”

Section: B Proposed Lna Topologymentioning

confidence: 99%

Gain-Enhancement Techniques for CMOS Folded Cascode LNAs at Low-Voltage Operations

Hsieh

Wang

2008

IEEE Trans. Microwave Theory Techn.

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In this paper, gain-enhancement techniques suitable for folded cascode low-noise amplifiers (LNAs) at low-voltage operations are presented. By employing a forward bias and a capacitive divider at the body of the MOSFETs, the LNA circuit can operate at a reduced supply voltage while maintaining an enhanced gain due to suppression of the negative impact of the body transconductance. In addition, a -boosting stage is introduced to further increase the LNA gain at the cost of circuit linearity. Using a standard 0.18-m CMOS process, two folded cascode LNAs are demonstrated at the 5-GHz band based on the proposed topologies. Consuming a dc power of 1.08 mW from a 0.6-V supply voltage, the LNA with the forward-body-bias technique demonstrates a gain of 10.0 dB and a noise figure of 3.37 dB. The measured in 1 dB and IIP 3 are 18 and 8.6 dBm, respectively. For the LNA with a -boosting feedback, a remarkable gain of 14.1 dB gain is achieved with a dc power of 1.68 mW.

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Section: B Proposed Lna Topologymentioning

confidence: 99%

Gain-Enhancement Techniques for CMOS Folded Cascode LNAs at Low-Voltage Operations

Hsieh

Wang

2008

IEEE Trans. Microwave Theory Techn.

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“…With the matching conditions specified in ( 11)-( 17), the effective transconductance of the gain stages can be derived as (18) (19) (20) where is the operating frequency, is the source impedance, and and represent the transconductance and gate-to-source capacitance of the MOSFETs, respectively. Generally, the capacitance is given by (21) where is a constant with a value of 2/3 for long-channel devices. By combining ( 9) and ( 21), the cutoff frequency, which is defined as the ratio of and , is expressed as (22) From ( 18)-( 20), it is clear that the effective transconductance of the gain stages is strongly influenced by the transistor overdrive voltage.…”

Section: B Theoretical Analysismentioning

confidence: 99%

Design of Ultra-Low-Voltage RF Frontends With Complementary Current-Reused Architectures

Hsieh

2007

IEEE Trans. Microwave Theory Techn.

112

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In this paper, ultra-low-voltage circuit techniques are presented for CMOS RF frontends. By employing a complementary current-reused architecture, the RF building blocks including a low-noise amplifier (LNA) and a single-balanced down-conversion mixer can operate at a reduced supply voltage with microwatt power consumption while maintaining reasonable circuit performance at multigigahertz frequencies. Based on the MOSFET model in moderate and weak inversion, theoretical analysis and design considerations of the proposed circuit techniques are described in detail. Using a standard 0.18-m CMOS process, prototype frontend circuits are implemented at the 5-GHz frequency band for demonstration. From the measurement results, the fully integrated LNA exhibits a gain of 9.2 dB and a noise figure of 4.5 dB at 5 GHz, while the mixer has a conversion gain of 3.2 dB and an IIP 3 of 8 dBm. Operated at a supply voltage of 0.6 V, the power consumptions of the LNA and the mixer are 900 and 792 W, respectively.

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“…Thus, the distributed amplifier topology is not adequate for mobile communication systems regardless of semiconductor device technologies. Silicon technology with simple LC matching circuits has been developed to wireless systems (8) . Si CMOS ICs, however, are employed in narrow-band systems, where limited gain and increased parasitic capacitances are tolerable because the operation frequencies are not so high (typically under 5 GHz) and the matching circuit is tuned for the frequency band of interest.…”

Section: Mmic Circuit Design and Fabricationmentioning

confidence: 99%

An Ultra-Wideband Amplifier MMIC for 3-10.6 GHz Wireless Applications with InGaP/GaAs HBT Technology

et al. 2007

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An ultra-wideband amplifier MMIC has been demonstrated for the Ultra-Wide-Band (UWB) standard with InGaP/GaAs Heterojunction Bipolar Transistor (HBT) technology. The fabricated MMIC chip size is only 0.53 mm by 0.93mm. The amplifier MMIC includes all matching circuits on the chip. This amplifier MMIC is applicable to both a UWB low noise amplifier and a UWB transmitter amplifier by changing the collector current. The operating bias currents are 15 mA for a low noise amplifier and 30 mA for a transmitter amplifier. The collector bias voltage is 3.0 V. The MMIC as a transmitter amplifier exhibits a gain of 16 +/-1 dB and a third-order intercept point at the input (IIP3) of 0 dBm with 6.0 and 6.01 GHz signals with equal amplitude level. As a low noise amplifier, the MMIC exhibits a noise figure of less than 3.7 dB from 3.1 to 10.6 GHz.Keywords : Ultrawideband Amplifier, InGaP/GaAs HBT, Low Noise Amplifier, MMIC, Transmitter amplifier IntroductionThe long term vision for Ultra-Wide-Band (UWB) products is to enable personal devices with integrated wireless connectivity. This requires 110, 200 and 480 Mbps at 10 m. One of the design challenges for the UWB system is the high operating frequencies (3.1-10.6 GHz) (1) . The UWB transceiver must have complexity similar to Bluetooth, in order to meet the stringent requirements of the IEEE 802.15.3a standard, even though it operates at a much higher bit rate. The low noise amplifier and transmitter power amplifier are the key components in addition to the fast switching PLL and the high bandwidth sampling rate A/D converter. The UWB spectral mask for indoor communication systems shows the maximum average output power is limited to -41.3 dBm (1) . Nevertheless the required linearity of the transmitter is far higher because peak power value is calculated to be about +2 dBm. Thus, high linearity is required of the transmitter amplifier. In the receiver, a total noise figure of about 7 dB is required (2) . Hence, less than 4 dB noise figure is required of the front-end low noise amplifier.Si CMOS devices are continuing scaling down. Using 0.18 µm CMOS technology, an amplifier which had a gain of 10.4 dB and a noise figure of 4.2 dB from 2.4 to 9.5 GHz frequency band was reported (3) . Moreover, an amplifier implemented in 0.13 µm CMOS technology exhibited a gain of 13 to 17 dB, a 3dB bandwidth of 8 GHz and 1 dB gain compression point of 3.5 dBm (4) . However, the dc consumption is really 100 mW, and 3-dB bandwidth is 8 GHz which is 2.6 GHz lower than that of UWB specification. Thus, current Si CMOS technologies are not sufficient to meet the technological requirements. In near future, it is expected that 90-65 nm CMOS technologies are available for microwave ICs. These CMOS technologies could have an f T of over 100 GHz with a breakdown voltage applicable to UWB transceivers. Thus, there are some possibilities that the CMOS technologies are used for UWB applications.A SiGe amplifier recently reported has a gain of 18 dB and a noise figure of 4.5 dB over the bandwidth from 3.1 ...

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Internally matched, ultralow DC power consumption CMOS amplifier for L-band personal communications

Cited by 16 publications

References 5 publications

Gain-Enhancement Techniques for CMOS Folded Cascode LNAs at Low-Voltage Operations

Gain-Enhancement Techniques for CMOS Folded Cascode LNAs at Low-Voltage Operations

Design of Ultra-Low-Voltage RF Frontends With Complementary Current-Reused Architectures

An Ultra-Wideband Amplifier MMIC for 3-10.6 GHz Wireless Applications with InGaP/GaAs HBT Technology

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