IEEE J. Quantum Electron.

1970

DOI: 10.1109/jqe.1970.1076480

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Internal<tex>Q</tex>switching in GaAs- Ga<inf>x</inf>Al<inf>1-x</inf>As heterostructure lasers

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Development and Characterization Of Laser Devices1

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1971

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Cited by 29 publications

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“…Accordingly, I was very skeptical of this explanation. Interestingly, Ed Ulmer and Izuo also found Qswitching in the new SH lasers [72]. The signature of the effect was quite similar to that of the lasers studied by José in spite of the very different doping and fabrication procedure.…”

Section: Development and Characterization Of Laser Devicessupporting

confidence: 69%

Witnessing the early semiconductor laser development at Bell Telephone Laboratories, Inc.

2012

Semicond. Sci. Technol.

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This paper gives a personal account of the research and development work at Bell Telephone Laboratories, Inc. during the first ten years following the first demonstration of semiconductor injection lasers.

“…Accordingly, I was very skeptical of this explanation. Interestingly, Ed Ulmer and Izuo also found Qswitching in the new SH lasers [72]. The signature of the effect was quite similar to that of the lasers studied by José in spite of the very different doping and fabrication procedure.…”

Section: Development and Characterization Of Laser Devicessupporting

confidence: 69%

Witnessing the early semiconductor laser development at Bell Telephone Laboratories, Inc.

2012

Semicond. Sci. Technol.

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This paper gives a personal account of the research and development work at Bell Telephone Laboratories, Inc. during the first ten years following the first demonstration of semiconductor injection lasers.

Effect of impurity gradient on the time delays and Q-switching in junction lasers

1972

Phys. Stat. Sol. (a)

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A retarding field model is proposed to account for the characteristics of Q‐switching and stimulated emission time delays in pulsed junction lasers. In addition, in diffused junctions, a spatial dependence of the carrier lifetime appears. The support of this model is that the time delay and Q‐switching appear especially in diffused junction lasers.

Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers

1971

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