Intermixing of InP-based quantum dots and application to micro-ring resonator wavelength-selective filter for photonic integrated devices

Matsumoto, Atsushi; Matsushita, A.; Takei, Yoshinori; Akahane, Kouichi; Matsushima, Yuichi; Ishikawa, Hiroshi; Utaka, Katsuyuki

doi:10.7567/apex.7.092801

Cited by 13 publications

(11 citation statements)

References 21 publications

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“…This QDI process at 1200 nm band was motivated from the previous study at 1550 nm band, as previously mentioned. The 1550 nm‐band QD sample was composed of InAs QDs, InAlGaAs barrier layers, and InAlAs cladding layers on an InP substrate, and gave rise to large PL peak wavelength shifts of about 190 nm for B + ion implantation and even 80 nm for Ar + ion one . These results may indicate that the 1550 nm‐band QD is liable to show the more enhanced QDI behaviors, which is probably attributed to the inclusion of higher migrating In element in the barrier layers.…”

Section: Resultsmentioning

confidence: 99%

“…The semiconductor compositional intermixing was basically realized by introducing vacancies by several methods such as plasma etching, sputtering and ion implantation, and successive annealing, as shown in Figure for the case by ion implantation. We had investigated the intermixing technique using these methods and compared the effectiveness from viewpoints of such as a large bandgap shift and peak intensity of PL spectra, and low loss for 1550 nm‐band InAs/InAlGaAs QD grown on a (311)B InP substrate, to have obtained 190 nm PL peak wavelength shift by B + ion implantation …”

Section: Methodsmentioning

confidence: 99%

“…For this purpose, we have developed the compositional intermixing technique using QDs (quantum dot intermixing [QDI]) for 1550 nm‐band QD samples that tailored the band gaps of QDs from the wavelength of 1550 nm for as‐grown QDs to about 1360 nm for the composition mixed QDI materials by about 190 nm wavelength shift, measured by photoluminescence (PL) spectra . This article presents that this QDI technique is applied to the 1200 nm‐band InAs/GaAs QD grown on the (100) GaAs substrate.…”

Section: Introductionmentioning

confidence: 99%

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The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Hiraishi

Shirai

Kwoen

et al. 2020

Physica Status Solidi (a)

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In this article, the quantum dot intermixing (QDI) technique previously developed for 1550 nm‐band InAs/InAlGaAs QD is applied to 1200 nm‐band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI are used such as inductively coupled plasma reactive ion etching (ICP‐RIE) (Ar+) and ion implantation (Ar+ and B+). As a result, about 80 nm photoluminescence (PL) peak wavelength shift is obtained for ICP‐RIE when annealing is performed at 575 °C, after etching down to 450 nm to the QD layer. On the contrary, about 110 nm PL peak wavelength shift is obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0 × 1014 cm−2 and subsequent annealing. Cross‐sectional image analyses by scanning transmission electron microscope (STEM) and energy‐dispersive X‐ray spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Hiraishi

Shirai

Kwoen

et al. 2020

Physica Status Solidi (a)

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“…17 As PL is more sensitive to the change in composition profile than other methods, such as X-ray diffraction, 18,19 it was frequently used for clarifying the blueshift. 20,21 The evolution of PL peak energy manifested pronounced S-shape for the dilute-N InGaNAs/GaAs single quantum wells (SQWs) at low temperatures, and followed the empirical Varshni model in the high-temperature region with significant reduction in the temperature dependence as compared to the N-free sample. [22][23][24][25] However, (i) controversies remained that while the drastic blueshift after annealing was considered as a result of the N content and/or the N-related localized level in the QW layer but not the In-Ga interdiffusion, 20,23,24 it was indicated that the annealing alone may induce interdiffusion in a length of 2 nm; 25 and (ii) while an exciton binding energy was derived to be about 6.5 meV for In 0.05 Ga 0.95 As/GaAs QW with a 8-nm-thick well layer, 26 a very small N content of about 0.5% in a 6-nm In 0.4 Ga 0.6 N 0.005 As 0.995 /GaAs SQW was shown to increase surprisingly the exciton binding energy by nearly 80% relative to the referential InGaAs/GaAs SQW to a value of about 17.5 meV.…”

Section: Introductionmentioning

confidence: 96%

Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

Shao

Zhao

et al. 2015

Journal of Applied Physics

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The effects of thermal annealing on the interfaces of InGa(N)As/GaAs single quantum wells (SQWs) are investigated by excitation-, temperature-, and magnetic field-dependent photoluminescence (PL). The annealing at 750 C results in more significant blueshift and narrowing to the PL peak than that at 600 C. Each of the PL spectra can be reproduced with two PL components: (i) the low-energy component (LE) keeps energetically unchanged, while the high-energy component (HE) moves up with excitation and shows at higher energy for the In 0.375 Ga 0.625 As/GaAs but crosses over with the LE at a medium excitation power for the In 0.375 Ga 0.625 N 0.012 As 0.988 /GaAs SQWs. The HE is broader than the corresponding LE, the annealing at 750 C narrows the LE and HE and shrinks their energetic separation; (ii) the PL components are excitonic, and the InGaNAs shows slightly enhanced excitonic effects relative to the InGaAs SQW; (iii) no typical S-shape evolution of PL energy with temperature is detectable, and similar blueshift and narrowing are identified for the same annealing. The phenomena are mainly from the interfacial processes. Annealing improves the intralayer quality, enhances the interfacial In-Ga interdiffusion, and reduces the interfacial fluctuation. The interfacial interdiffusion does not change obviously by the small N content and hence similar PL-component narrowing and blueshift are observed for the SQWs after a nominally identical annealing. Comparison with previous studies is made and the PL measurements under different conditions are shown to be effective for probing the interfacial evolution in QWs.

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“…In addition, the increase of communication traffic in access networks and datacenters is higher than in other networks. Compact and high functional photonic integrated circuits (PICs) with high stability of temperature, such as heterogeneous or monolithic integrated devices, are desired in the networks. In particular, a semiconductor optical amplifier (SOA) is a key device that functions as a gain medium and nonlinear element in PICs.…”

Section: Introductionmentioning

confidence: 99%

Dynamic characteristics of 20‐layer stacked QD‐SOA with strain compensation technique by ultrafast signals using optical frequency comb

Matsumoto

Akahane

Sakamoto

et al. 2016

Physica Status Solidi (a)

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This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.In this article, we evaluated the static and dynamic characteristics of 20-layer stacked quantum dot semiconductor optical amplifiers (QD-SOAs) grown on an InP(311)B substrate with a strain compensation technique by ultrafast signals using an optical frequency comb. The gain peak wavelength of the fabricated QD-SOA was 1520 nm, and a maximum gain of approximately 15.8 dB was obtained when the injection current was 350 mA. By using optical bit rate multiplier modules, an optical pulse, which was generated by the use of the optical frequency comb, was multiplexed. We observed the dynamic behavior of the QD-SOA with the pulse trains. The minimum interval between pulses was 4.2 ps, and we measured using an optical sampling oscilloscope. It was found the QD-SOA could respond to ultrafast pulses that were equivalent to the signals of 220 Gb s À1 class speed without any large pattern distortions. In addition, we could obtain a rather clear optical pulse waveform. We also estimated the gain recovery time of the QD-SOA to be 6.0 ps by using a pump probe-like method. One of the reasons that the fabricated QD-SOA could respond to ultrafast signals was its ultrashort gain recovery time.

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Intermixing of InP-based quantum dots and application to micro-ring resonator wavelength-selective filter for photonic integrated devices

Cited by 13 publications

References 21 publications

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wells

Dynamic characteristics of 20‐layer stacked QD‐SOA with strain compensation technique by ultrafast signals using optical frequency comb

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