Interlayer exchange coupling in MBE-grown GaMnAs-based multilayer systems

Lee, Hakjoon; Lee, Sangyeop; Choi, Sang Yong; Bac, Seul Ki; Lee, Sanghoon; Li, Xiang; Liu, Xinyu; Dobrowolska, M.; Furdyna, J. K.

doi:10.1016/j.jcrysgro.2017.01.039

Cited by 16 publications

(9 citation statements)

References 22 publications

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“…However, such oscillatory behavior has never been experimentally observed in DMS-based structures, even though a similar oscillatory behavior of IEC as in metal-based systems is predicted by theoretical studies 11 , 12 . We note additionally that, although the FM IEC itself is regularly observed in GaMnAs-based multilayers 13 – 16 , AFM IEC has only been seen in specially designed structures in which IEC is mediated by p-type non-magnetic GaAs spacers with specific thicknesses 17 , 18 .…”

Section: Introductionmentioning

confidence: 80%

Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Chongthanaphisut

Bac

Choi

et al. 2019

Sci Rep

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We report the observation of ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in GaMnAsP-based trilayer structures with out-of-plane magnetic anisotropy. Magnetization and anomalous Hall effect (AHE) measurements show well-resolved magnetization transitions corresponding to the two GaMnAsP layers. Minor loop measurements reveal a characteristic shift caused by IEC in all trilayer samples investigated. Interestingly, the FM IEC changes to AFM IEC for a trilayer with the thinnest (7 nm) top GaMnAsP layer as the temperature increases. The observation of temperature-induced transition of FM and AFM IEC in the same sample suggests the possibility of device applications by controlling the type of IEC in such GaMnAsP-based multilayers.

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Section: Introductionmentioning

confidence: 80%

Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Chongthanaphisut

Bac

Choi

et al. 2019

Sci Rep

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“…However, other magnetic phenomena such as interlayer exchange coupling, magnetic surface anisotropy, and mesoscopic magnetism have been intensively studied in recent years in systems based on metallic multilayer and superlattices. [8][9][10][11][12] Interlayer interaction properties have been explored in the case of multilayer systems based on magnetic materials (ferromagnetic metals, diluted magnetic semiconductors-DMS, or ferromagnetic semiconductors) over non-magnetic semiconductors. 10,13 This is because it is widely know that the ferromagnetism of GaMnAs is produced through the charge carriers coming from the Mn ions, whose carrier density variation controls its magnetic properties.…”

Section: Introductionmentioning

confidence: 99%

“…[8][9][10][11][12] Interlayer interaction properties have been explored in the case of multilayer systems based on magnetic materials (ferromagnetic metals, diluted magnetic semiconductors-DMS, or ferromagnetic semiconductors) over non-magnetic semiconductors. 10,13 This is because it is widely know that the ferromagnetism of GaMnAs is produced through the charge carriers coming from the Mn ions, whose carrier density variation controls its magnetic properties. [14][15][16][17] DMS materials based on GaMnAs and GaMnSb are present as promising materials for the development of applications in spintronics, although its critical temperature or Curie temperature (Tc) is low (190 K for the GaMnAs and 25 K for the GaMnSb).…”

Section: Introductionmentioning

confidence: 99%

Thermal Annealing Effect on GaSb Thin Films Deposited on Si (001) for Assembly of GaSb/Mn Multilayer Systems at Room Temperature

Calderón

Dussán

2021

J. Electron. Mater.

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This work presents a study of the morphological and structural properties of GaSb and GaSb/Mn thin films as support for the construction of GaSb/Mn multilayer systems deposited on Si (001) wafer substrate for electronic and spintronic applications. Thin films were obtained through DC magnetron sputtering, and the GaSb thin film was subjected to high-vacuum annealing for 2 h, 4 h, 6 h, 8 h and 10 h. The morphological properties were studied by SEM micrographs. It was observed that the width of depression regions on the GaSb thin film surface decreased (from ~ 617 nm to ~ 56 nm) when the annealing time was increased. A fast Fourier transform filter allowed identifying the formation of grains on the surface of the sample. The dependence of the grain size on the annealing times was described through the abnormal model. XRD measurements and the Burke-Turnbull model were used for establishing the dependence between GaSb crystallite size and annealing times. From Auger spectra, it was possible to determine the Ga diffusion process, its high mobility in the GaSb matrix, and its relationship with morphological properties. It was observed that the thermal processes favor the GaSb phase formation and the increase of grain size on the surface of the sample. AFM micrographs showed the topographical characteristics of the GaSb thin films surface and MFM images presented an exploration of the magnetic behavior for the bilayer system. Loops in hysteresis at 50 K were observed through measurements of the vibrating sample magnetometer, for the [GaSb/Mn] 3 sample fabricated at room temperature (T s = 300 K). These loops have been attributed to the magnetic anisotropy conditions generate through unbalanced Mn magnetic moments due to the Mn antiferromagnetic property presented at this temperature and the diffuse interfaces between GaSb and Mn layers. Lastly, the study of morphological properties of single-layer GaSb and its dependence on annealing times allowed determining that GaSb/Mn multilayer systems fabricated at room temperature present diffuse interfaces, although with clearly distinguished layers, and represent an alternative option for their fabrication.

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“…La preparación de semiconductores magnéticos diluidos (DMS) III-V-Mn (tema de interés en el presente trabajo), se ha realizado mediante distintas técnicas epitaxiales [15,16,17,18]. Sin embargo, el alto costo que implica la implementación de la mayoría de estas técnicas a nivel industrial genera la exploración de métodos alternativos que permitan obtener películas delgadas de buena calidad estructural a un menor costo de producción [19,20].…”

Section: Introducciònunclassified

Segregación de Mn en películas delgadas de GaAsMn obtenidas mediante pulverización catódica

et al. 2020

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RESUMEN Actualmente, la fabricación de películas delgadas de GaAs dopadas con Mn (GaAsMn) sobre Si (100), es un objeto de gran interés debido a su posible integración con la tecnología del silicio, generando un desarrollo significativo en la funcionalidad de los dispositivos optoelectrónicos y espintrónicos. En este trabajo, presentamos un estudio sistemático de la caracterización estructural, morfológica, óptica, y magnética de películas delgadas de GaAsMn preparadas por pulverización catódica R.F sobre un substrato de silicio (100), para temperaturas del crecimiento de 100 y 200 oC, respectivamente. A partir de los espectros Raman se identificaron los modos vibracionales, trasversal óptico (TO) y longitudinal óptico (LO) de GaAs, localizados en 290 cm-1 y 265 cm-1, respectivamente. Adicionalmente, se identificaron modos vibracionales de MnAs, debido a la substitucion de átomos de Ga por átomos de Mn en altas concentraciones. La segregación de Mn, fue corroborada mediante difracción de rayos-X, en donde se evidencian planos cristalinos en las direcciones (400) y (200) de GaAs policristalino, y planos cristalográficos pertenecientes a fases de Mn1+xAs. La morfología y el modo de crecimiento de las películas delgadas de GaAsMn/Si (100), se llevó a cabo mediante imágenes de microscopía de fuerza atómica (AFM) y microscopía electrónica de barrido (SEM) tomadas sobre la superficie y en sección transversal, respectivamente. Finalmente, un análisis de las propiedades magnéticas de las películas delgadas de GaAsMn a partir de imágenes de microscopía de fuerza magnética (MFM), revelan la presencia de dominios magnéticos superficiales provenientes de MnAs. Concluimos que las propiedades físicas de las películas de GaAsMn dependen de las condiciones de crecimiento.

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Interlayer exchange coupling in MBE-grown GaMnAs-based multilayer systems

Cited by 16 publications

References 22 publications

Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Thermal Annealing Effect on GaSb Thin Films Deposited on Si (001) for Assembly of GaSb/Mn Multilayer Systems at Room Temperature

Segregación de Mn en películas delgadas de GaAsMn obtenidas mediante pulverización catódica

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