Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Chongthanaphisut, Phunvira; Bac, Seul Ki; Choi, Sang Yong; Lee, Kyung Jae; Chang, Ji‐Eun; Choi, Suho; Lee, Sanghoon; Nnaji, Moses; Liu, X.; Dobrowolska, M.; Furdyna, J. K.

doi:10.1038/s41598-019-41138-9

Cited by 5 publications

(1 citation statement)

References 33 publications

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“…4-13 (C)). Note that similar plateaus have been reported in other systems with ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling [142]. If the two different magnetic orders have different critical temperatures the magnetization changes faster closer to the ordering temperature, so their relative contribution to the total magnetization is temperature-dependent, as we can note from figure 4-11.…”

Section: Analysis Of the Anomalous Hall-resistancesupporting

confidence: 83%

Skyrmion-vortex interactions in chiral-magnet/superconducting hybrid systems

Machain¹

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Section: Analysis Of the Anomalous Hall-resistancesupporting

confidence: 83%

Skyrmion-vortex interactions in chiral-magnet/superconducting hybrid systems

Machain¹

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Temperature-induced antiferromagnetic interlayer exchange coupling in (Ga,Mn)(As,P)-based trilayer structure

Chongthanaphisut

Lee

Park

et al. 2020

Journal of Applied Physics

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We present the observation of temperature-induced transition between ferromagnetic (FM) and antiferromagnetic (AFM) interlayer exchange coupling (IEC) in trilayer structures consisting of two (Ga,Mn)(As,P) ferromagnetic layers and a GaAs:Be spacer. Hall resistance measurements were performed on trilayers prepared in as-grown and annealed states. Anomalous Hall resistance (AHR) measurements show two-step hysteresis loops, indicating that coercive fields of the two (Ga,Mn)(As,P) layers in the trilayer are different. Minor loops of AHR show characteristic shifts that correspond to FM IEC at low temperatures and AFM IEC at high temperatures in both as-grown and annealed samples. This temperature-induced transition from FM to AFM IEC occurs at a lower temperature in the annealed sample than in the as-grown sample. We attribute such an enhanced IEC transition effect in the annealed sample to the increase of carrier concentrations obtained by annealing, a characteristic feature of ferromagnetic semiconductors. The observation of AFM IEC in the (Ga,Mn)(As,P)-based trilayer suggests the possibility of realizing synthetic antiferromagnetic systems in such structures, which can be used for antiferromagnetic spintronic device applications.

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Gate control of interlayer exchange coupling in ferromagnetic semiconductor trilayers with perpendicular magnetic anisotropy

Chongthanaphisut

Lee

et al. 2022

APL Materials

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Interlayer exchange coupling (IEC) has been intensively investigated in magnetic multilayers, owing to its potential for magnetic memory and logic device applications. Although IEC can be reliably obtained in metallic ferromagnetic multilayer systems by adjusting structural parameters, it is difficult to achieve gate control of IEC in metallic systems due to their large carrier densities. Here, we demonstrate that IEC can be reliably controlled in ferromagnetic semiconductor (FMS) trilayer structures by means of an external gate voltage. We show that, by designing a quantum-well-type trilayer structure based on (Ga,Mn)(As,P) FMSs and adapting the ionic liquid gating technique, the carrier density in the nonmagnetic spacer of the system can be modulated with gate voltages of only a few volts. Due to this capability, we are able to vary the strength of IEC by as much as 49% in the FMS trilayer. These results provide important insights into design of spintronic devices and their energy-efficient operation.

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Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy

Cited by 5 publications

References 33 publications

Skyrmion-vortex interactions in chiral-magnet/superconducting hybrid systems

Skyrmion-vortex interactions in chiral-magnet/superconducting hybrid systems

Temperature-induced antiferromagnetic interlayer exchange coupling in (Ga,Mn)(As,P)-based trilayer structure

Gate control of interlayer exchange coupling in ferromagnetic semiconductor trilayers with perpendicular magnetic anisotropy

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