Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors

Holloway, Paul H.; Kim, T.-J.; Trexler, J.T.; Miller, Stephen J.; Fijol, J.J.; Lampert, W. V.; Haas, T. W.

doi:10.1016/s0169-4332(97)80109-2

Cited by 36 publications

(12 citation statements)

References 41 publications

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“…4 Realization of low-resistivity (r c ), thermally stable ohmic contacts is vital for high performance device applications. 5 Because the Fermi level on the GaN surface is unpinned, 6 ohmic contacts for n-type GaN can be formed by selecting a metal whose work function is less than the electron affinity of GaN, or by increasing donor concentration at the GaN surface to invoke tunneling. There are numerous reports 7-26 on developing and optimizing ohmic contacts to n-type GaN.…”

Section: Introductionmentioning

confidence: 99%

Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN

Mahadik

Rao

Davydov

2006

Journal of Elec Materi

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The performance of a novel Ge/Cu/Ti metallization scheme on n-type GaN has been investigated for obtaining thermally and electrically stable low-resistance ohmic contacts. Isochronal (2 min.) anneals in the 600-740°C temperature range and isothermal (690°C) anneals for 2-10 min. duration were performed in inert atmosphere. For the 690°C isothermal schedule, ohmic behavior was observed after annealing for 3 min. or longer with a lowest contact resistivity of 9.1 3 10 À5 V cm 2 after the 10 min. anneal for a net donor doping concentration of 9.2 3 10 17 cm À3 . Mean roughness (R a ) for anneals at 690°C was almost constant at around 5 nm, up to an annealing duration of 10 min., which indicates a good thermal stability of the contact scheme.

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Section: Introductionmentioning

confidence: 99%

Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN

Mahadik

Rao

Davydov

2006

Journal of Elec Materi

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“…Часто встречающимся методом создания омических контактов к GaAs является образование в приконтактной области сильно легированного (до 10 20 −10 21 см −3 ) приповерхностного слоя, который значительно сужает потенциальный барьер металл-полупроводник [19,21]. Этот принцип реализован в наиболее распространенных омических контактах для GaAsAuGeNi омических контактах [22,23].…”

Section: вах ртд определяетсяunclassified

Study of thermal degradation of AuGeNi ohmic contacts of resonant tunneling diodes based on nanoscale AlAs / GaAs heterostructures

Makeev¹,

Ivanov²,

Мешков³

et al. 2012

S&E BMSTU

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“…The formation of stable reliable low resistance ohmic contacts to p-type GaN has been an obstacle to achieving good performance of those devices. For devices with large contact areas, such as LEDs and LDs, a specific contact resistance (ρ c ) of between 10 -4 and 10 -6 Ωcm 2 is considered acceptable and for devices with smaller contact areas, values of ρ c of between 10 -5 and 10 -7 Ωcm 2 are necessary [5]. Bilayer metal schemes, such as Ni/Au and Pd/Au, have been studied by many groups [6]- [10].…”

Section: Introductionmentioning

confidence: 99%

Microstructure and Electrical Properties of Low Temperature Processed Ohmic Contacts to p-Type GaN

Park¹,

Song²,

Anderson³

2002

ETRI J

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With Ni/Au and Pd/Au metal schemes and low temperature processing, we formed low resistance stable Ohmic contacts to p‐type GaN. Our investigation was preceded by conventional cleaning, followed by treatment in boiling HNO3:HCl (1:3). Metallization was by thermally evaporating 30 nm Ni/15 nm Au or 25 nm Pd/15 nm Au. After heat treatment in O2 + N2 at various temperatures, the contacts were subsequently cooled in liquid nitrogen. Cryogenic cooling following heat treatment at 600 ·C decreased the specific contact resistance from 9.84·10−4 Ωcm2 to 2.65·10−4 Ωcm2 for the Ni/Au contacts, while this increased it from 1.80·10−4 Ωcm2 to 3.34·10−4 Ωcm2 for the Pd/Au contacts. The Ni/Au contacts showed slightly higher specific contact resistance than the Pd/Au contacts, although they were more stable than the Pd contacts. X‐ray photoelectron spectroscopy depth profiling showed the Ni contacts to be NiO followed by Au at the interface for the Ni/Au contacts, whereas the Pd/Au contacts exhibited a Pd:Au solid solution. The contacts quenched in liquid nitrogen following sintering were much more uniform under atomic force microscopy examination and gave a 3 times lower contact resistance with the Ni/Au design. Current‐voltage‐temperature analysis revealed that conduction was predominantly by thermionic field emission.

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Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors

Cited by 36 publications

References 41 publications

Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN

Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN

Study of thermal degradation of AuGeNi ohmic contacts of resonant tunneling diodes based on nanoscale AlAs / GaAs heterostructures

Microstructure and Electrical Properties of Low Temperature Processed Ohmic Contacts to p-Type GaN

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