Study of thermal degradation of AuGeNi ohmic contacts of resonant tunneling diodes based on nanoscale AlAs / GaAs heterostructures

Makeev, Mstislav; Ivanov, Yury A.; Мешков, С. А.; Назаров, В. Н.

doi:10.7463/0912.0453636

Cited by 3 publications

(2 citation statements)

References 21 publications

(8 reference statements)

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“…In [7,9] it was indicated, that diffusion blur in the resonant tunneling structure affects RTD IV curve shape. Modelling of the diffusion processes for the selected parameters of thermal impact with the means of software calculation complex dif2RTD [10], developed by the authors of this work, indicates that the diffusion blur of the researched resonant tunneling structure is negligibly small and does not change significantly RTD IV curve shape. Diffusion blur of Si in the region near the contacts also has no significant effect on the contact resistance and IV curve of RTD.…”

Section: Resultsmentioning

confidence: 85%

Estimation of Thermal Destruction of AuGeNi Ohmic Contacts of Resonant Tunneling Diodes on the Basis of Nanoscale AlAs/GaAs Heterostructures

2015

2015 the 5th International Workshop on Computer Science and Engineering-Information Processing and Control Engineering

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In the present work the thermal destruction of AuGeNi ohmic contacts of resonant tunneling diodes using artificial aging was researched. The functional dependence of contact resistance of AuGeNi ohmic contacts of resonant tunneling diodes on time and temperature was put forward. This dependence is valid in case the temperatures are lower than 300 º C, it was determined for two parties of resonant tunneling diodes. Obtained results can be used for reliability prediction of resonant tunneling diodes and radio-electronic devices on its basis.

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Section: Resultsmentioning

confidence: 85%

Estimation of Thermal Destruction of AuGeNi Ohmic Contacts of Resonant Tunneling Diodes on the Basis of Nanoscale AlAs/GaAs Heterostructures

2015

2015 the 5th International Workshop on Computer Science and Engineering-Information Processing and Control Engineering

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“…Зависимость контактного сопротивления R C AuGeNi омических контактов от времени и температуры может быть описана следующим образом [43] Энергия активации E a деградационных явлений AuGeNi омических контактов равна 1 эВ [46,47].…”

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Investigation of degradation of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures

Макеев¹,

Иванов²,

Мешков³

et al. 2013

EJSI

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Для радиотехнических устройств на основе наноразмерных многослойных полупроводниковых гетероструктур актуальна проблема обеспечения надежности вследствие чувствительности параметров гетероструктуры к процессам деградации ввиду малости толщин слоев. В данной работе проведены исследования термической деградации AlAs/GaAs наногетероструктуры и партии резонансно-туннельных диодов с использованием методов ИК-спектральной эллипсометрии и ускоренного старения полупроводниковых устройств. В результате определены активационные параметры диффузии (энергия активации и предэкспоненциальный множитель) Al и Si в резонансно-туннельной структуре и приконтактных областях и зависимость контактного сопротивления AuGeNi омических контактов от времени и температуры. Полученные в настоящей работе числовые характеристики основных деградационных процессов могут быть использованы для прогнозирования надежности резонансно-туннельных диодов и нелинейных преобразователей радиосигналов на их основе.

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About reliability improvement of mixing AlAs/GaAs resonant tunneling diodes by design and engineering means

Makeev¹,

Ivanov²,

Мешков³

et al. 2013

S&E BMSTU

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Study of thermal degradation of AuGeNi ohmic contacts of resonant tunneling diodes based on nanoscale AlAs / GaAs heterostructures

Cited by 3 publications

References 21 publications

Estimation of Thermal Destruction of AuGeNi Ohmic Contacts of Resonant Tunneling Diodes on the Basis of Nanoscale AlAs/GaAs Heterostructures

Estimation of Thermal Destruction of AuGeNi Ohmic Contacts of Resonant Tunneling Diodes on the Basis of Nanoscale AlAs/GaAs Heterostructures

Investigation of degradation of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures

About reliability improvement of mixing AlAs/GaAs resonant tunneling diodes by design and engineering means

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