Interfacial layer formation of the CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition

Abstract

CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p-InSb ͑111͒ orientation substrates in the growth temperature range between 200 and 300°C. The stoichiometry of the CdTe/InSb heterostructure was observed by Auger electron spectroscopy, and Auger depth profiles demonstrated that the CdTe/InSb heterointerface was not abrupt. Transmission electron microscopy verified the formation of an interfacial layer in the CdTe/ InSb interface and the formation of the stacking faults in the CdTe thin film. These results indicated that the films grown at approximately 270°C contained a formation problem of an interfacial layer due to interdiffusion from the InSb prior to the growth of the CdTe, and that the interfacial layer might deteriorate the electrical property of the CdTe epitaxial layer.

Synthesis of homogeneous and high-quality GaN films on Cu(111) substrates by pulsed laser deposition

“…42 These dislocations would lead to a nonuniform diffusion of nitrogen and Ga plasma on the interface during the further growth, and eventually result in the formation of an interfacial layer. 44,45 In our case, the lattice and CTE mismatches between AlN and GaN at a higher growth temperature of 750 °C are much smaller than the ones at a lower growth temperature of 550 °C, 31,50,51 which results in the formation of less stressed GaN films at the higher growth temperature of 750 °C, as the GaN films tend towards a uniform growth and lead to the absence of the interfacial layer. 44,52,53 The epitaxial growth relationship between AlN and GaN of AlN This journal is © The Royal Society of Chemistry 2014 alignment of GaN [11−20]//AlN [11−20]//Cu [1−10] could also be obtained, as shown in Fig.…”

“…These may be attributed to the different lattice and CTE mismatches between AlN and GaN at different temperatures. [44][45][46][47][48][49][50][51] Due to the lattice and CTE mismatches between AlN and GaN, stress is produced in the AlN/GaN interface during the initial growth. 12,13 The stressed films may attempt to relieve stress by the formation of dislocations.…”