Interfacial interactions of titanium-coated polyester films

Porta, G. M.; Rancourt, James D.; Taylor, Larry T.

doi:10.1021/cm00015a013

Cited by 7 publications

(6 citation statements)

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“…At each site, a broad surface scan (range 0-100 D) was acquired on a rectangular area of 1.4 × 10 -3 cm 2 prior to depth profiling. The latter involved monitoring of a combination of ions, 48 Ti 16 O + , 48 Ti + , 39 K + , 28 Si + , 27 Al + , and 16 O + . The first two ions were used to characterize the titanium oxide film, potassium, silicon, and aluminum ions acted as representatives of the mica phase, and 16 O + was used to monitor the wellknown oxygen enhancement effect which increases the secondary ion yields of electropositive elements.…”

Section: Methodsmentioning

confidence: 99%

“…60 TiC + and 12 C + were also included in some profiles because the former was detected in all wide scans and in the XPS investigations. During depth profiling for negative ions, 12 C -, 28 Si -, 16 O -, 27 AlO -, and 48 TiOwere monitored.…”

Section: Methodsmentioning

confidence: 99%

“…A contribution to the peak at mass 61 was possible from 49 Ti 12 C + . Si-derivative peaks occurred at m/z ) 45, 56, and 58 because of SiOH + , 28 Si 2 + , and 29 Si 2 + respectively, although a minor contribution to the latter two peaks could have resulted from the iron impurity in the titanium film (Table 2). Finally, Ga + and GaO + at m/z ) 69 and 85, respectively, are characteristic peaks arising from the implanted ions of the primary ion microprobe.…”

Section: Afm Figuresmentioning

confidence: 99%

“…Flat TiO 2 surfaces are commercially available in different crystalline structures but at relatively great expense. To avoid this, flat TiO 2 surfaces can be prepared in-house using one of the following techniques: sputtering; , chemical vapor deposition; anodic growth; modification of a single TiO 2 crystal by polishing, lapping, chemical etching, or doping; deposition of TiO 2 thin layers from sol−gel precursors on self-assembled monolayers patterned by microcontact printing techniques; or thermal evaporation onto a flat substrate, such as mica, a single sodium chloride crystal, or another smooth crystal or metal …”

Section: Introductionmentioning

confidence: 99%

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Characterization of Ultraflat Titanium Oxide Surfaces

et al. 2002

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In this work we investigated the physical and chemical nature of ultraflat titanium dioxide (TiO2) samples which we had previously used as substrates for the investigation of adsorbed protein molecules (Cacciafesta, P.; Humphris, A. D. L.; Jandt, K. D.; Miles, M. J. Langmuir 2000, 16, 8167). Titanium films were prepared by thermal evaporation on a heated mica surface and either separated from the mica to investigate the resulting surface or left in contact with the mica to analyze the titanium−mica interface. Atomic force microscopy (AFM) of the surfaces exposed after removal of the mica showed very flat surfaces [root-mean-square roughness of 0.29 nm ± 0.03 nm] and the presence of disordered as well as ordered structures. Different degrees of order were observed, such as a square lattice with spacing of a 0 = 0.49 nm, a regular pattern with spacings of a 0 = 0.47 nm and b 0 = 0.35 nm with an angle of ∼80° between a 0 and b 0, or the presence of surface defects. These ordered structures were not stable upon long-term AFM imaging and could be damaged by the scanning tip. To further investigate the nature of the ordered regions, X-ray diffraction (XRD) was performed for the titanium−mica samples. XRD showed the crystalline structures of both the mica and the titanium film but did not detect any order in the titanium−mica interface. Possible causes for the formation of the ordered regions are discussed, in the cases of formation both after removal of mica or during sample preparation. The chemical nature of the titanium−mica interface was investigated with secondary ion mass spectrometry and X-ray photoelectron spectroscopy (XPS) via depth profiling of the titanium−mica samples from the titanium side. The metal film was found to be mainly composed of titanium and to a lesser extent of oxygen and carbon. After the metal film was sputtered and the titanium−mica interface was reached, the titanium concentration decreased and the concentration of the typical mica elements, such as silicon, aluminum, and potassium, increased. XPS was also used to investigate the chemical composition of the surfaces obtained after mica removal, which were found to be mainly composed of TiO2 with a small percentage of Ti2O3. The possible applications of this simple method for preparing ultraflat TiO2 surfaces are discussed.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Afm Figuresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Characterization of Ultraflat Titanium Oxide Surfaces

et al. 2002

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“…Depending on the experimental parameters of the plasma process the concentration ratio of reactant species can vary, producing oxidations and scissions in carbon chains that release terminal gases. 10,11 Applying plasma in the reactive ion etching ͑RIE͒ mode aspect ratios of more than 20 have been achieved by selective anisotropic etching of polyimide using a Ti mask. 12 However, the step of additional mask formation can be eliminated, for example, plasma-developed images of polyamic acid and photoactive compound mixtures can be obtained after silylation of the photoresist, and subsequently the O 2 reactive ion etching step.…”

Section: Introductionmentioning

confidence: 99%

Dry development of photosensitive polyimides for high resolution and aspect ratio applications

Muñoz¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Dry development of sub-0.25 μm features patterned with 193 nm silylation resist Application of plasma polymerized methylsilane resist for all-dry 193 nm deep ultraviolet processing A plasma developing process for photosensitive polyimide layers has been investigated as an alternative to wet development. Silylation of photoimageable polyimide by applying an organosilicon compound and subsequent ultraviolet exposure using a g-line mask aligner equipment lead, as a consequence, to copolymerization of photoactive functional groups of silylating agents and sensitizer groups of the polyimide-based photoresists. Development of the photoresist layer is carried out by means of oxygen-containing plasma. Interaction of oxygen plasma with a silylated surface of polyimide leads to the formation of a silicon oxide layer that acts as a barrier giving large differences in the etching rates of the photoresist covered and not covered with organosilane. The influence of O 2 plasma etching process parameters on the etching selectivity is studied. The photochemical silylation process and the dry developing method have been characterized by scanning electron microscopy and Fourier transform infrared spectroscopy.

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