Interfacial insertion of a poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) layer between the poly(3-hexyl thiophene) semiconductor and cross-linked poly(vinyl alcohol) insulator layer in organic field-effect transistors

Cruz-Cruz, Isidro; Tavares, Ana C.; Reyes-Reyes, M.; López-Sandoval, R.; Hümmelgen, Ivo A.

doi:10.1088/0022-3727/47/7/075102

Cited by 16 publications

(5 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7,8 Quite recently, it was demonstrated that the insertion of a very thin layer of low conductivity aged PEDOT:PSS (poly (3,4ethylenedioxythiophene):poly(styrenesulfonate)) treated with dimethyl sulfoxide, as a secondary doping agent, between the cr-PVA and the P3HT channel positively affects the FET performance due to trap action suppression. 9 Despite providing insights to control the traps promoted device characteristics degradation through a very thin shielding layer, aged PEDOT:PSS is not easily available and for this reason cannot be seen as a simple and largely applicable solution.…”

Section: Introductionmentioning

confidence: 99%

Performance enhancement of poly(3-hexylthiophene-2,5-diyl) based field effect transistors through surfactant treatment of the poly(vinyl alcohol) gate insulator surface

Nawaz

Cruz-Cruz

Rodrigues

et al. 2015

Phys. Chem. Chem. Phys.

Self Cite

View full text Add to dashboard Cite

We report on the improvement of field effect transistors based on poly(3-hexylthiophene-2,5-diyl) (P3HT) as a channel semiconductor and crosslinked poly(vinyl alcohol) (cr-PVA) as a gate insulator, through the treatment of the cr-PVA film surface before P3HT deposition. We treated the cr-PVA either with hydrochloric acid (HCl) or with a cationic surfactant, hexadecyltrimethylammonium bromide (CTAB), aiming at the passivation of the hole traps at the cr-PVA/P3HT interface. The treatment with HCl leads to an excessive increase in the transistor leakage current and unstable electrical characteristics, despite implying an increase in the gate capacitance. The treatment with CTAB leads to transistors with ca. 50% higher specific capacitance and a tenfold increase in the charge carrier field-effect mobility, when compared to devices based on untreated cr-PVA.

show abstract

Section: Introductionmentioning

confidence: 99%

Performance enhancement of poly(3-hexylthiophene-2,5-diyl) based field effect transistors through surfactant treatment of the poly(vinyl alcohol) gate insulator surface

Nawaz

Cruz-Cruz

Rodrigues

et al. 2015

Phys. Chem. Chem. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…This dipole is fully developed when the CuPc film is 2.2 nm thick, which produces a −0.8 eV lowering of the PEDOT work function. As we are using aged PEDOT:PSS , the expected lower bipolaron population and the smaller electric conductivity of our material can produce a lower polarization of this film. Yet this dipole formation should in principle be present, leading to variations of the threshold voltage of the transistor upon insertion of the PEDOT:PSS layer, a fact that was indeed observed in our measurements.…”

Section: Resultsmentioning

confidence: 99%

“…Details regarding aged PEDOT characterization and PEDOT modification by dimethyl sulfoxide addition are given in Ref. ). CuPc (30 nm thick) was evaporated onto the Al/cr‐PVA or Al/cr‐PVA/PEDOT at ∼1 nm s −1 .…”

Section: Methodsmentioning

confidence: 99%

“…Channel semiconductor/insulator (S/I) interface modification was recently investigated for polymeric devices prepared using poly(3‐hexylthiophene‐2,5‐diyl) as channel semiconductor and cr‐PVA as gate insulator. Interface charge or dipole electric field shielding effect and passivation with cationic surfactant or reducing agent (vitamin C) were studied, showing an overall improvement of the device performance that produces higher values of I DS , µ , and the transconductance

g_{normalm} = d I_{DS} / d V_{GS} .

…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Jastrombek

Tavares

Meruvia

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

The charge carrier mobility is an important parameter that directly affects the performance of organic field‐effect transistors. We use copper phthalocyanine (CuPc)‐based transistors having crosslinked poly(vinyl alcohol) (cr‐PVA) as gate insulator to study the variation of the mobility in CuPc with the distance from the gate insulator interface. By measuring the mobility of the charge carriers flowing along the channel as a function of the minimum thickness of the effective channel near to the transistor source, we demonstrate that the mobility is low near to the interface and shows a maximum at approximately 5 nm from the interface. The mobility dependence on distance from interface can be modified through the inclusion of a poorly conducting thin PEDOT:PSS layer between gate insulator and channel semiconductor, which effectively acts as a gate insulator extension. This procedure is a simple but efficient strategy to improve organic field‐effect transistor performance, positively affecting the transconductance and the mobility, which in the studied devices is increased by a factor 20. The improvement is attributed to the suppression of the deleterious consequences of interface charge traps on transport along the channel and is, in principle, a general approach applicable to other organic field‐effect transistor materials combinations.

show abstract

“…Therefore, the mobility and operational stability depend on the hydrophobicity of the dielectric layer than the morphology of the semiconductor. Strategies to reduce the trap states, like the insertion of polystyrene sulfonate (PEDOT: PSS) between the semiconductor layer and the gate dielectric layer, resulting in both reduction of trap states at the interface of the semiconductor and the dielectric layer and an improvement of carrier mobility . Cristiane de Col et al demonstrated the application of an environmentally friendly aqueous solution of ascorbic acid (vitamin C) at the interface of the semiconductor layer and the gate dielectric layer to passivate the positively charged defects present on the surface of cross‐linked poly(vinylalcohol) gate dielectric and significant improvement of device performance was achieved .…”

Section: Resultsmentioning

confidence: 99%

Investigation on the mobility and stability in organic thin film transistors consisting of bilayer gate dielectrics

Sun

Zhuang

Yan

et al. 2015

Physica Status Solidi (a)

View full text Add to dashboard Cite

One of the important problems in organic thin film transistors (OTFTs) is the existence of traps on oxide gate dielectrics which degrades the device performance and stability. By modifying the dielectric oxide surface, we obtained devices with bilayer dielectrics that show high mobility and good operational stability compared with the devices based on bare silicon dioxide dielectric layer. The average carrier mobility increases from 0.19 (without surface modification) to 0.35, 0.51, and 0.97 cm2 V−1 s−1 after employing a thin layer of hexamethyldisilazane (HMDS), polymethylmethacrylate (PMMA), and polystyrene (PS), respectively. The PS‐modified device exhibits the superior mobility, operational, and air stability in comparison with other devices. We ascribe these results to fewer traps caused by the OH group or OH‐induced water at the interface of semiconductor and the dielectric layer. In our study, the morphology of the semiconductor layer seems to have limited influence on the mobility and operational stability.

show abstract

Interfacial insertion of a poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) layer between the poly(3-hexyl thiophene) semiconductor and cross-linked poly(vinyl alcohol) insulator layer in organic field-effect transistors

Cited by 16 publications

References 49 publications

Performance enhancement of poly(3-hexylthiophene-2,5-diyl) based field effect transistors through surfactant treatment of the poly(vinyl alcohol) gate insulator surface

Performance enhancement of poly(3-hexylthiophene-2,5-diyl) based field effect transistors through surfactant treatment of the poly(vinyl alcohol) gate insulator surface

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Investigation on the mobility and stability in organic thin film transistors consisting of bilayer gate dielectrics

Contact Info

Product

Resources

About