Investigation on the mobility and stability in organic thin film transistors consisting of bilayer gate dielectrics

Sun, Qijun; Zhuang, Jiaqing; Yan, Yan; Zhou, Ye; Han, Su‐Ting; Zhou, Li; Roy, Vellaisamy A. L.

doi:10.1002/pssa.201532380

Cited by 16 publications

(9 citation statements)

References 45 publications

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“…For the preparation of FETs and FET‐based sensors, the active layer is usually fabricated by thermal evaporation methods. Pentacene is one of the commonly used thermally evaporated semiconductors for electronics and sensors due to its relatively high mobility as well as its stability . Yakuphanoglu et al demonstrated a flexible photodetector by employing thermally evaporated pentacene as the sensor's active material .…”

Section: Approaches To Fabricate Flexible Sensorsmentioning

confidence: 99%

An Overview of the Development of Flexible Sensors

et al. 2017

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Flexible sensors that efficiently detect various stimuli relevant to specific environmental or biological species have been extensively studied due to their great potential for the Internet of Things and wearable electronics applications. The application of flexible and stretchable electronics to device-engineering technologies has enabled the fabrication of slender, lightweight, stretchable, and foldable sensors. Here, recent studies on flexible sensors for biological analytes, ions, light, and pH are outlined. In addition, contemporary studies on device structure, materials, and fabrication methods for flexible sensors are discussed, and a market overview is provided. The conclusion presents challenges and perspectives in this field.

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Section: Approaches To Fabricate Flexible Sensorsmentioning

confidence: 99%

An Overview of the Development of Flexible Sensors

et al. 2017

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“…Sun et al [98] have shown that the life-time of OTFTs can be improved by using a bilayer gate dielectric. The low-k polymer used above the SiO 2 layer in this structure reduces the hydroxyl groups at the surface and makes the structure impervious to moisture.…”

Section: High-k/low-k Bilayer-based Otftsmentioning

confidence: 99%

Hybrid bilayer gate dielectric-based organic thin film transistors

Teja

Gupta

2019

Bull Mater Sci

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Organic thin film transistors (OTFTs) are key building blocks for flexible, low cost electronics systems. They provide a viable alternative for silicon-based electronics with added advantages of low cost and flexibility. However, few issues like high-operating voltage, low-switching speed, high-leakage current and reliability are still a challenge. The overall performance of an OTFT depends on organic semiconductors and gate dielectric interface. In this paper, we review the current status and trends in the choice of dielectric layer for OTFTs. As a starting point, the performance parameters of an OTFT and their dependence on the dielectric layer are briefly discussed. A variety of dielectric materials which includes high-k inorganic, organic, surface coated inorganics and nanocomposites are also presented. The advantages and drawbacks of each of these materials are discussed in detail. We reviewed the latest developments in the dielectric materials especially, self-assembled monolayers (SAMs), hybrid bilayers and nanocomposites. SAM-based OTFTs offer several advantages but shift in the threshold voltage remains a concern. Nanocomposites are a latest addition to the dielectric materials, which offer advantages like solution processing and improved dielectric constant but have a rough surface. A hybrid bilayer that incorporates the inorganic dielectric as a base layer and a thin polymer layer over it to improve the surface properties offers several desirable characteristics over the other choices. Hence, we propose that hybrid bilayer gate dielectrics shall play a pivotal role in improving the OTFT performance.

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“…The threshold voltage ( V th ) was extracted from the plot of square root of drain voltage (| I DS | 1/2 ) versus gate voltage ( V GS ) and determined as the intercept at I DS = 0. The dielectric constant (κ) of REO films, estimated thicknesses of PS, HMDS, and ODPA layers on Si, saturated mobility (μ), and subthreshold swing (SS) of OTFTs are calculated using the following equations: where C i is the capacitance of the gate dielectric per unit area, A is the contact area of Si/Ln 2 O 3 /Au capacitor, κ is the dielectric constant, d is the thickness of Ln 2 O 3 films, W is the channel width, L is the channel length, I DS is the drain current, V GS is the gate voltage, and V th is the threshold voltage. , …”

Section: Methodsmentioning

confidence: 66%

“…As depicted in Figure a–c, ultrasmooth surfaces can be observed for Ln 2 O 3 (Ln = La, Gd, and Er) films after postannealing treatment. Specifically, the root-mean-square (rms) roughnesses are 0.09, 0.10, and 0.08 nm for Ln = La, Gd, and Er, respectively, which are comparable to those of commercially available thermally grown SiO 2 dielectric layer . In addition, the pristine ultrasmooth surface provides a good contact with top electrodes in capacitors or the semiconductor layers in transistors.…”

Section: Resultsmentioning

confidence: 99%

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

Zhuang

Sun

Zhou

et al. 2016

ACS Appl. Mater. Interfaces

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Previous investigations on rare-earth oxides (REOs) reveal their high possibility as dielectric films in electronic devices, while complicated physical methods impede their developments and applications. Herein, we report a facile route to fabricate 16 REOs thin insulating films through a general solution process and their applications in low-voltage thin-film transistors as dielectrics. The formation and properties of REOs thin films are analyzed by atomic force microscopy (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry, water contact angle measurement, X-ray photoemission spectroscopy (XPS), and electrical characterizations, respectively. Ultrasmooth, amorphous, and hydrophilic REO films with thickness around 10 nm have been obtained through a combined spin-coating and postannealing method. The compositional analysis results reveal the formation of RE hydrocarbonates on the surface and silicates at the interface of REOs films annealed on Si substrate. The dielectric properties of REO films are investigated by characterizing capacitors with a Si/LnO/Au (Ln = La, Gd, and Er) structure. The observed low leakage current densities and large areal capacitances indicate these REO films can be employed as alternative gate dielectrics in transistors. Thus, we have successfully fabricated a series of low-voltage organic thin-film transistors based on such sol-gel derived REO films to demonstrate their application in electronics. The optimization of REOs dielectrics in transistors through further surface modification has also been studied. The current study provides a simple solution process approach to fabricate varieties of REOs insulating films, and the results reveal their promising applications as alternative gate dielectrics in thin-film transistors.

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Investigation on the mobility and stability in organic thin film transistors consisting of bilayer gate dielectrics

Cited by 16 publications

References 45 publications

An Overview of the Development of Flexible Sensors

An Overview of the Development of Flexible Sensors

Hybrid bilayer gate dielectric-based organic thin film transistors

Solution-Processed Rare-Earth Oxide Thin Films for Alternative Gate Dielectric Application

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