Performance enhancement of poly(3-hexylthiophene-2,5-diyl) based field effect transistors through surfactant treatment of the poly(vinyl alcohol) gate insulator surface

Nawaz, Ali; Cruz-Cruz, Isidro; Rodrigues, Rafael; Hümmelgen, Ivo A.

doi:10.1039/c4cp02245a

Cited by 17 publications

(9 citation statements)

References 17 publications

(13 reference statements)

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“…These values of intrinsic mobility are comparable to the higher values found in literature for P3HT transistors [16,52,53,58]. The best value encountered is about 1.2 cm 2 /Vs for P3HT with regioregularity 100% for data in saturation using Au as electrode [58].…”

Section: Table I Threshold Voltages and Effective Mobilities Obtained...supporting

confidence: 87%

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Organic Field Effect Transistors

Boudinov

Leite

2022

JICS

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This article begins with a brief overview of the structure, physical characteristics, and peculiarities of organic field effect transistors. The main differences from the silicon MOSFET are emphasized. The results of poly 3-hexylthiophene and cross-linked polyvinyl alcohol top gate-bottom contact transistors with different channel lengths fabricated by standard photolithography and plasma etching are described. Transistors showed good charge mobility, high ION/IOFF and excellent environmental stability. The Shockley model and the Transmission Line Method (TLM) were applied to characterize the transistors. Mobility was extracted by both methods and differences were discussed. The shorter the channel length and the higher the conductivity of the semiconductor, the greater the impact of contact resistance. In these cases, the use of TLM for parameters extraction becomes essential. The transistors were submitted to extended current-voltage measurements and drain current degradation was observed. Drain current as a function of the integral charge passing through the channel was investigated. The strong decrease in current was found to be related to reduced mobility of charge carriers. Reasons for this behavior are suggested.

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Section: Table I Threshold Voltages and Effective Mobilities Obtained...supporting

confidence: 87%

“…The corresponding extracted data are shown in Table I. Threshold voltages are very close to -1 V. This value was also found in other works of PVA/P3HT based transistors with Au electrodes [16,52].…”

Section: Influence Of Contact Resistance On Mobility Extractionsupporting

confidence: 83%

Organic Field Effect Transistors

Boudinov

Leite

2022

JICS

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“…Poly(3-hexylthiophene) (P3HT) is one of the best semiconductors in organic electronics, especially in photovoltaic devices, [143,144] and OFET devices, [145][146][147][148][149] because of its high crystallinity and high performance. Therefore, P3HT is often used as the standard material for comparison with many newly developed OSCs or application in novel device structures.…”

Section: Polythiophene-based Materialsmentioning

confidence: 99%

Organic Electrochemical Transistors for In Vivo Bioelectronics

et al. 2021

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“…Channel semiconductor/insulator (S/I) interface modification was recently investigated for polymeric devices prepared using poly(3‐hexylthiophene‐2,5‐diyl) as channel semiconductor and cr‐PVA as gate insulator. Interface charge or dipole electric field shielding effect and passivation with cationic surfactant or reducing agent (vitamin C) were studied, showing an overall improvement of the device performance that produces higher values of I DS , µ , and the transconductance

g_{normalm} = d I_{DS} / d V_{GS} .

…”

Section: Introductionmentioning

confidence: 99%

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

Jastrombek

Tavares

Meruvia

et al. 2015

Physica Status Solidi (a)

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The charge carrier mobility is an important parameter that directly affects the performance of organic field‐effect transistors. We use copper phthalocyanine (CuPc)‐based transistors having crosslinked poly(vinyl alcohol) (cr‐PVA) as gate insulator to study the variation of the mobility in CuPc with the distance from the gate insulator interface. By measuring the mobility of the charge carriers flowing along the channel as a function of the minimum thickness of the effective channel near to the transistor source, we demonstrate that the mobility is low near to the interface and shows a maximum at approximately 5 nm from the interface. The mobility dependence on distance from interface can be modified through the inclusion of a poorly conducting thin PEDOT:PSS layer between gate insulator and channel semiconductor, which effectively acts as a gate insulator extension. This procedure is a simple but efficient strategy to improve organic field‐effect transistor performance, positively affecting the transconductance and the mobility, which in the studied devices is increased by a factor 20. The improvement is attributed to the suppression of the deleterious consequences of interface charge traps on transport along the channel and is, in principle, a general approach applicable to other organic field‐effect transistor materials combinations.

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Performance enhancement of poly(3-hexylthiophene-2,5-diyl) based field effect transistors through surfactant treatment of the poly(vinyl alcohol) gate insulator surface

Cited by 17 publications

References 17 publications

Organic Field Effect Transistors

Organic Field Effect Transistors

Organic Electrochemical Transistors for In Vivo Bioelectronics

Improved charge carrier mobility in copper phthalocyanine based field effect transistors by insertion of a thin poorly conducting layer as gate insulator extension

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