Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

Hinkle, Christopher L.; Vogel, Eric M.; Ye, Peide D.; Wallace, Robert M.

doi:10.1016/j.cossms.2011.04.005

Cited by 125 publications

(90 citation statements)

References 179 publications

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“…14 This is in marked contrast to the frequency dispersion typically observed in the literature for n-type In 0.53 Ga 0.47 As, [1][2][3][4][5][6][7] where broad peaks associated with an interface state response are observed in the CV at negative gate bias, irrespective of the gate oxide or passivation method employed. This indicates that the mid-gap D it is sufficiently low in the optimized 10% (NH 4 ) 2 S ($3 min ALD transfer time) samples analysed in this study to allow movement of the Fermi level through the mid-gap interface defect within the bias range applied.…”

contrasting

confidence: 53%

“…Analysis of the minority carrier response of n-type and p-type Au/Ni/Al 2 [1][2][3][4][5][6][7] In the case of p-type In 0.53 Ga 0.47 As, at positive gate bias, CV characteristics consistent with a midgap interface state response have been observed. [8][9][10][11] Recently, Trinh et al 12 and Lin et al 7 presented CV responses consistent with true minority carrier behaviour for n-In 0.53 Ga 0.47 As and p-In 0.53 Ga 0.47 As, respectively.…”

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confidence: 99%

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Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

O’Connor

Monaghan

Cherkaoui

et al. 2011

Applied Physics Letters

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The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al2O3 on n-type and p-type In0.53Ga0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As devices following an optimized ammonium sulfide (NH4)2S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation-recombination regime to a diffusion controlled response.

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confidence: 53%

mentioning

confidence: 99%

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

O’Connor

Monaghan

Cherkaoui

et al. 2011

Applied Physics Letters

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“…14,15 Thereby XPS could accurately reveal the interface chemistry including quantitative suboxide evaluation, 8,16 sources of interface defects, 17 and stoichiometry variations within thin films. 18 The high intensity and tunable photon energy of today's synchrotron X-ray sources increases the resolution and further extends the limits of this method, enabling e.g.…”

Section: Author(s) All Article Content Except Where Otherwise Notedmentioning

confidence: 99%

Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

et al. 2013

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MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 layer deposited on InAs, with Hard X-ray Photoemission Spectroscopy. In and As signals from InAs buried more than 18 nm below the surface are clearly detected. The HfO2 layers are found to be homogeneous, and no influence of the top metal on the sharp InAs-HfO2 interface is observed. These results bridge the gap between conventional photoemission spectroscopy studies on various metal-free model samples with very thin dielectric layers and realistic MOS gate stacks

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“…[12][13][14][15] Furthermore, this method has been successfully applied for the investigation of the structure and chemical composition of surfaces and interfaces of semiconductors NWs, e.g., to study the composition and removal of surface oxides on InAs NWs 16 or to probe the size and oxidation dependence of the conductivity in GaAs NWs. 17 However, there is a lack of XPS studies on core/shell heterostructure NWs, so far.…”

Section: Introductionmentioning

confidence: 99%

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Khanbabaee

Bussone

Knutsson

et al. 2016

Journal of Applied Physics

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Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the Asoxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about À0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell. Published by AIP Publishing. [http://dx

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Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

Cited by 125 publications

References 179 publications

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

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