Analysis of the minority carrier response of <i>n</i>-type and <i>p</i>-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

O’Connor, Eileen; Monaghan, Scott; Cherkaoui, Karim; Povey, Ian M.; Hurley, Paul K.

doi:10.1063/1.3663535

Cited by 52 publications

(45 citation statements)

References 16 publications

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“…To date, only a In recent work we reported on a study of the minority carrier response of both n-type and p-31 type In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) devices formed using an optimized 10% 32 ammonium sulfide ((NH 4 ) 2 S) treatment. 7 in Figure 5(a). The resulting  g are plotted in Figure 5( voltage applied to the gate will not significantly affect their occupancy.…”

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confidence: 99%

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

O’Connor

Cherkaoui

Monaghan

et al. 2017

Applied Physics Letters

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In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, sg, extracted from experimentally measured transition frequencies, xm, using physics based a.c. simulations, demonstrated a reduction in sg with increasing epitaxial doping concentration. The frequency scaled conductance, G/x, in strong inversion allowed the estimation of accurate Cox values for these MOS devices

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confidence: 99%

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

O’Connor

Cherkaoui

Monaghan

et al. 2017

Applied Physics Letters

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“…In addition, recent work has shown how the frequency scaled conductance, G/x, and the derivative of capacitance with angular frequency, ÀxdC/dx, are related, which can be used to evaluate the oxide capacitance and the minority carrier generation lifetime from the In 0.53 Ga 0.47 As MOS system in inversion [4]. The objective of this work is to extend on the results reported in [2,4] to investigate if surface inversion for the Al 2 O 3 / In 0.53 Ga 0.47 As structure can be realized for a reduced E ot , and to determine how the inversion response of the capacitance and conductance, and associated minority carrier generation lifetime, are influenced by post-metallization forming gas annealing.…”

Section: Introductionmentioning

confidence: 90%

“…In recent years there has been progress in reducing the density of interface states in the In 0.53 Ga 0.47 As MOS system to the point where genuine surface inversion has been achieved in the capacitance-voltage response of both n and p-type In 0.53 Ga 0.47 As MOS structures [1][2][3]. In addition, recent work has shown how the frequency scaled conductance, G/x, and the derivative of capacitance with angular frequency, ÀxdC/dx, are related, which can be used to evaluate the oxide capacitance and the minority carrier generation lifetime from the In 0.53 Ga 0.47 As MOS system in inversion [4].…”

Section: Introductionmentioning

confidence: 99%

Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

O’Connor

Cherkaoui

Monaghan

et al. 2015

Microelectronic Engineering

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“…16, (ii) S3 in Ref. 9, and (iii) S5 and S6 are identical to S3 with the exception of the oxide thickness ($12 nm instead of $8 nm) and the fact that S6 is p-type.…”

Section: Methodsmentioning

confidence: 99%

“…4 Detrimental scattering of electrons due to the presence of a high interface state defect density (D it ) at the high-k/In 0.53 Ga 0.47 As interface is a major issue. 5,6 Significant advances have been made in recent times [7][8][9] at reducing the large and dominant mid-gap D it in In 0.53 Ga 0.47 As semiconductor MOS capacitors 10 (MOSCAPs) with sufficient effect to achieve band-to-band (unpinned) Fermi level movement, and this progress has been successfully transferred to equivalent material MOSFET devices. 11 As further development and optimization of the high-k/ In 0.53 Ga 0.47 As interface continues, an accurate estimate of D it is important to ensure performance enhancements can be predicted and achieved in resulting MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors

Monaghan¹,

O’Connor²,

Povey³

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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(4) different transfer times to the atomic layer deposition chamber after passivation treatment on the semiconductor surfacethereby demonstrating a cross-section of device characteristics. The authors set out to determine the importance of the AC voltage amplitude selection on the interface state defect density extractions and whether this selection has a combined effect with the oxide capacitance. These capacitors are prototypical of the type of gate oxide material stacks that could form equivalent metal-oxide-semiconductor field-effect transistors beyond the 32 nm technology node. The authors do not attempt to achieve the best scaled equivalent oxide thickness in this work, as our focus is on accurately extracting device properties that will allow the investigation and reduction of interface state defect densities at the high-k/III-V semiconductor interface. The operating voltage for future devices will be reduced, potentially leading to an associated reduction in the AC voltage amplitude, which will force a decrease in the signal-to-noise ratio of electrical responses and could therefore result in less accurate impedance measurements. A concern thus arises regarding the accuracy of the electrical property extractions using such impedance measurements for future devices, particularly in relation to the mid-gap interface state defect density estimated from the conductance method and from the combined high-low frequency capacitance-voltage method. The authors apply a fixed voltage step of 100 mV for all voltage sweep measurements at each AC frequency. Each of these measurements is repeated 15 times for the equidistant AC voltage amplitudes between 10 mV and 150 mV. This provides the desired AC voltage amplitude to step size ratios from 1:10 to 3:2. Our results indicate that, although the selection of the oxide capacitance is important both to the success and accuracy of the extraction method, the mid-gap interface state defect density extractions are not overly sensitive to the AC voltage amplitude employed regardless of what oxide capacitance is used in the extractions, particularly in the range from 50% below the voltage sweep step size to 50% above it. Therefore, the use of larger AC voltage amplitudes in this range to achieve a better signal-to-noise ratio during impedance measurements for future low operating voltage devices will not distort the extracted interface state defect density.

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Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

Cited by 52 publications

References 16 publications

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga0.47As capacitors

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