2012
DOI: 10.1016/j.jallcom.2011.12.099
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Interface strain coupling and its impact on the transport and magnetic properties of LaMnO3 thin films grown on ferroelectrically active substrates

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Cited by 14 publications
(7 citation statements)
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References 26 publications
(36 reference statements)
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“…It has been found that the strain state influences not only the electric conduction and magnetism [19][20][21][22][23][24][25][26]28], but also the magnetorsistance effects and photoconductivity [27,36]. In this study, we found that the strain state also affects the electroresistance effects in LPCMO.…”
Section: Resultssupporting
confidence: 52%
See 1 more Smart Citation
“…It has been found that the strain state influences not only the electric conduction and magnetism [19][20][21][22][23][24][25][26]28], but also the magnetorsistance effects and photoconductivity [27,36]. In this study, we found that the strain state also affects the electroresistance effects in LPCMO.…”
Section: Resultssupporting
confidence: 52%
“…As a consequence, the electronic properties change dramatically. Not only magnetic field but also electric field/current [14][15][16][17][18], strain [19][20][21][22][23][24][25][26][27][28] and photo illumination [29][30][31][32][33][34][35] can be the external perturbation. In past years, much work has been devoted to these external-stimuli-induced changes because these studies are helpful for understanding the underlying physics in manganites as well as practical application.…”
Section: Introductionmentioning
confidence: 99%
“…ðDRÞ strain exhibits a maximum value at around T C , manifesting a strong correlation between the strain effect and the phase separation, i.e., the stronger the phase separation, the larger the strain-induced change in resistance. 25 To further understand the relationship between strain effect and phase separation, the temperature dependence of straininduced relative change in resistance ðDR=RÞ strain (i.e., straintunability of resistance), here ðDR=RÞ strain ¼½RðP 0 r ; HÞ ÀRðP þ r ; HÞ=RðP 0 r ; HÞ, under H ¼ 0, 1, 3, 5, and 7 T is shown in Fig. 4.…”
mentioning
confidence: 99%
“…9. Magnetic field dependence of the ferroelectric poling induced reduction in resistance of a LaMnO 3-δ thin film [54]. Fig.…”
Section: Oxide Molecular Beam Epitaxymentioning
confidence: 99%
“…7). In a practical example Zheng et al [54] tested these concepts using PMN-PT single crystals as ferroelectric substrates and LaMnO 3 as well as CaMnO 3 thin films and observed a strong coupling of the Jahn-Teller distortion to the charge carriers. In Fig.…”
Section: Substrate Requirements and Opportunitiesmentioning
confidence: 99%