Effects of ferroelectric-poling-induced strain on magnetic and transport properties of La0.67Ba0.33MnO3 thin films grown on (111)-oriented ferroelectric substrates

Abstract

Articles you may be interested inElectric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals J. Appl. Phys. 116, 113911 (2014); 10.1063/1.4896172Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure AIP Advances 4, 057106 (2014); 10.1063/1.4876234The investigation of reversible strain and polarization effect in (011)-La0.9Ba0.1MnO3 film using field effect configuration Effects of ferroelectric-poling-induced strain on the transport and magnetic properties of La 7 / 8 Ba 1 / 8 MnO 3 thin films La 0.67 Ba 0.33 MnO 3 thin films were epitaxially grown on (111)-oriented 0.31Pb(In 1/2 Nb 1/2 )O 3 -0.35Pb(Mg 1/3 Nb 2/3 )O 3 -0.34PbTiO 3 ferroelectric single-crystal substrates. During ferroelectric poling and polarization rotation, the resistance of La 0.67 Ba 0.33 MnO 3 films tracks the electric-fieldinduced in-plane strain of substrates effectively, implying strain-mediated coupling. Upon poling along the [111] direction, ferromagnetism is suppressed for T < 175 K, but enhanced for T > 175 K, which is explained by magnetoelastic coupling that modifies the film's magnetic anisotropy. Our findings also show that the magnetic field has an opposite effect on the strain-tunability of resistance [i.e.,ðDR=RÞ strain ] above and below the Curie temperature T C , which is interpreted within the framework of phase separation. V C 2013 AIP Publishing LLC. [http://dx.

Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals

“…S3 of the supplementary material, 26 the overall conducting behavior throughout the whole temperature range and the impact of poling-induced strain on the resistance are similar to a previous report on La 0.67 Ba 0.33 MnO 3 films by Zhu et al 19 It is noteworthy that, if a negative reverse electric field of E ¼ À8 kV/cm was applied to the positively poled PINT substrate along the [-1-1-1] direction at T ¼ 296 K, the resistance of the LBM040 film undergoes a peak near E ¼ À3.5 kV/cm then followed by a sharp drop upon further increase in E [inset (a) of Fig. S3].…”

“…For example, Kanki et al 17 achieved 2.5 K reversible shift in the metal-to-insulator transition temperature by electric-field control of accumulation/depletion of charge carriers at the interface for the La 0.85 Ba 0.15 MnO 3 /Pb(Zr 0.2 Ti 0.8 )O 3 heterostructure. Li and Zhu et al 18,19 reported electric-field control of resistance and magnetization of La 1-x Ba x MnO 3 films grown on FE single-crystal substrates, through ferroelectric poling of FE substrates. However, such electric-field induced poling of FE substrates is irreversible, resulting in irreversible changes in the lattice strain and physical properties of the films.…”

Coupling of magnetic field and lattice strain and its impact on electronic phase separation in La0.335Pr0.335Ca0.33MnO3/ferroelectric crystal heterostructures

“…For example, ðDR=RÞ strain at T ¼ 160 K was increased by roughly 3 times under H ¼ 9 T. Such substantial magnetic-field-induced enhancement of ðDR=RÞ strain has not yet been reported for R 1-x A x MnO 3 /PMN-PT (R ¼ La, Pr; A ¼ Ca, Sr, Ba) systems. 17,19,22,[25][26][27] These data together tell us that ðDR=RÞ strain or the strain effect is deeply associated with EPS and the larger the relative strength of the EPS, the larger the ðDR=RÞ strain . Based on this, it is understandable that the magnetically tunable ðDR=RÞ strain is microscopically a result of the magnetic-field-induced change in the relative strength of the EPS.…”

Electrical controlled magnetism in FePt film with the coexistence of two phases

“…11 As we know, the strain can also be regarded as a driving field to induce the phase transition in some systems, giving rise to the change of magnetization. [12][13][14] Therefore, it is interesting to use this mechanism to gain large CME effect in strain-mediated heterostructures.…”