Coupling of magnetic field and lattice strain and its impact on electronic phase separation in La0.335Pr0.335Ca0.33MnO3/ferroelectric crystal heterostructures

Abstract

Published by the AIP Publishing Articles you may be interested inInfluence of lattice strain on charge/orbital ordering and phase separation in Pr0.7(Ca0.6Sr0.4)0.3MnO3 thin films J. Appl. Phys. 115, 17D708 (2014); 10.1063/1.4863383 Temperature dependence of nanometer-size metallic phase texture and its correlation with bulk magnetic and transport properties and defects of a (La0.4Pr0.6)0.67Ca0.33MnO3 film Appl. Phys. Lett. 101, 022404 (2012); 10.1063/1.4733666 Strain effect caused by substrates on phase separation and transport properties in Pr0.7(Ca0.8Sr0.2)0.3MnO3 thin films J. Appl. Phys. 111, 07D721 (2012); 10.1063/1.3678297 Phase separation and enhanced magnetoresistance in the strained epitaxial La0.625Ca0.375MnO3 (001) films J. Appl. Phys. 111, 066104 (2012); 10.1063/1.3695376 Magneto-and electro-resistance effects in phase separated Pr0.55(Ca0.65S0.35)0.45MnO3 films

Optically and electrically co-controlled resistance switching in complex oxide heterostructures

“…Moreover, the DR=R versus E curve discloses a typical butterfly-like shape, resembling the butterfly-like strain curves of the PMN-PT. 25,26 This finding further confirms the strain-induced nature of the resistance evolution. Considering the infinitesimal screening length (1-2 Å ) of the electron in SRO films, 29 it is reasonable to preclude the electric-field-induced electrostatic charge-mediated correlation mechanism in our 35 nmthick SRO film.…”

“…With the increase in the negative reverse E, a non-180 polarization reorientation occurs near the coercive field, 24 causing a large jump in resistance near E C . The E C value of the PMN-PT can be referred to our earlier work 25,26 and the reports by Jie et al 27 and Chen et al 28 With a further increase in the reverse E (E>j-E C j), the polarization undergoes another non-180 reorientation, 24 accompanied by a sharp drop in the resistance. This two-stage polarization reorientation process leads to a 180 polarization switching for all domains, i.e., the polarization vectors point along the [001] direction (denoted by the P À r state) [see the inset of Fig.…”

Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators

“…Considering the different material constants, the measurements seem to be counter-intuitive: a “softer” bonding layer leads to higher transferred strains. Furthermore, it should be mentioned that the measured strain transfer rates of ≈70% for the devices with the “soft” SU8 bonding layer are higher than the transfer rates reported for semiconductor-layers epitaxially grown on PMN-PT substrates (17%; 34 40% 35 ), and in the same range as for epitaxially grown La 0.335 Pr 0.335 Ca 0.33 MnO 3 (34 nm thick) layers (∼71% 36 ). This comparison highlights the capabilities of the SU8 bonding technique, since even epitaxially grown layers with a thickness 10 times lower than the GaAs membrane used in this work do not show significantly higher strain-transfer efficiencies.…”

Electric field manipulation of magnetic and transport properties in SrRuO3/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure

“…Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 (PMN-PT) and PbZr x Ti 1-x O 3 (PZT) are frequently selected as the ferroelectric/piezoelectric substrates due to their excellent piezoelectric and ferroelectric performance. As for the ferromagnetic components, magnetic perovskites are ideal candidates because they exhibit abundant physical properties and are easy to grow epitaxially on the ferroelectric substrates10111213. In magnetic-perovskite-based ME heterostructures, the magnetism can be manipulated by means of altering the magnetic anisotropy10, affecting the phase separation1112, or adjusting the spin state of magnetic ions13 through the electric-field-induced strain.…”

“…As for the ferromagnetic components, magnetic perovskites are ideal candidates because they exhibit abundant physical properties and are easy to grow epitaxially on the ferroelectric substrates10111213. In magnetic-perovskite-based ME heterostructures, the magnetism can be manipulated by means of altering the magnetic anisotropy10, affecting the phase separation1112, or adjusting the spin state of magnetic ions13 through the electric-field-induced strain. In addition to strain-mediated mechanism, ferroelectric field-effect14 may also plays a role in tuning magnetic and transport properties of magnetic perovskites in those ME heterostructures due to the accumulation or depletion of charge carries at interface through ferroelectric polarization reversal151617.…”