In routine clinical practice, the addition of trastuzumab to chemotherapy was effective and safe in real-world setting in Chinese patients with HER2 positive AGC, regardless of most of the clinicopathological factors. Further studies are needed to improve the prognosis of HER2 positive patients with liver metastasis or poor PS. Trial Registration clinicaltrials.gov Identifier: NCT03024450.

Optical control of spin is of central importance in the research of ultrafast spintronic devices utilizing spin dynamics at short time scales. Recently developed optical approaches such as ultrafast demagnetization, spin-transfer and spin-orbit torques open new pathways to manipulate spin through its interaction with photon, orbit, charge or phonon. However, these processes are limited by either the long thermal recovery time or the low-temperature requirement. Here we experimentally demonstrate ultrafast coherent spin precession via optical charge-transfer processes in the exchange-coupled Fe/CoO system at room temperature. The efficiency of spin precession excitation is significantly higher and the recovery time of the exchange-coupling torque is much shorter than for the demagnetization procedure, which is desirable for fast switching. The exchange coupling is a key issue in spin valves and tunnelling junctions, and hence our findings will help promote the development of exchange-coupled device concepts for ultrafast coherent spin manipulation.

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The electrical field manipulation of magnetization is investigated in an Au/NiO/Pt heterostructure, which is fully compatible with the standard complementary metal-oxide semiconductor process. Reversible and stable unipolar resistive switching effects as well as a significant nonvolatile change of the magnetization are observed in this device during the set and reset processes at room temperature. Further analysis indicates that the formation and rupture of metallic Ni conducting filaments caused by the electric field would be responsible for the changes of resistivity and magnetization. The coexistence of the electric field control of magnetization change and resistive switching makes Au/NiO/Pt heterostructure a promising candidate for the multifunctional memory devices.

The electric field manipulation of magnetic properties is currently of great interest for the opportunities provided in low-energy-consuming spintronics devices. Here, we report the effect of electric field on magnetic and transport properties of the ferromagnetic SrRuO3 film which is epitaxially grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 ferroelectric substrate. With the application of electric field on the substrate, the magnetization, Curie temperature and resistivity of SrRuO3 are effectively modified. The mechanism of the electric field manipulation of these properties is ascribed to the rotations of RuO6 oxygen octahedra caused by the electric-field-induced strain, which changes the overlap and hybridization between the Ru 4d orbitals and O 2p orbitals, resulting in the modification of the magnetic and electronic properties.

La1−xSrxCoO3 (x = 0.18, 0.33, and 0.5) films were grown epitaxially on piezoelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 substrates by pulsed laser deposition. The magnetization of these films varies with the external electric field, showing the magnetoelectric effect. With different doping content of Sr2+ ions, the change of magnetization for these films show different behaviors with increasing temperature, which can be attributed to the competition between electric-field-induced changes of spin state and double exchange interaction. This work presents an alternative mechanism to investigate the electric field control of magnetism in magnetoelectric heterostructure by tuning the spin state.

The La2/3Ba1/3MnO3 film is deposited in a CMOS-compatible Pt/Ti/SiO2/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La2/3Ba1/3MnO3/Pt device. Through this effect, a significant nonvolatile change of magnetization is obtained in this device as well. The change of magnetization can be understood by the break and repair of the -Mn3+-O2−-Mn4+- chains induced by the electric field through the oxygen vacancies migration. The resistance and magnetization of the Au/La2/3Ba1/3MnO3/Pt device can be simultaneously manipulated by the electric field, which makes it to be a promising candidate for the multifunctional memory devices.

HER2 positivity was higher in GCLM patients. HER2 status itself was not an independent prognostic factor in GCLM patients. Trastuzumab-based therapy could significantly improve survival in HER2-positive GCLM patients.