Electric field manipulation of nonvolatile magnetization in Au/NiO/Pt heterostructure with resistive switching effect

Abstract

The electrical field manipulation of magnetization is investigated in an Au/NiO/Pt heterostructure, which is fully compatible with the standard complementary metal-oxide semiconductor process. Reversible and stable unipolar resistive switching effects as well as a significant nonvolatile change of the magnetization are observed in this device during the set and reset processes at room temperature. Further analysis indicates that the formation and rupture of metallic Ni conducting filaments caused by the electric field would be responsible for the changes of resistivity and magnetization. The coexistence of the electric field control of magnetization change and resistive switching makes Au/NiO/Pt heterostructure a promising candidate for the multifunctional memory devices.

Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film

“…It is known that X-ray photoelectron spectroscopy (XPS) is sensitive to chemical environment of atoms, which can provide information for the change of chemical state during the RS effect 22 , 28 , 53 , 54 . We have conducted XPS studies of Al/CFO/FTO device in Pristine State as well as in Low Resistance State and High Resistance State after electroforming and the results show the valence change of cobalt during the resistive switching.…”

“…Bipolar Resistive Switching memory devices are considered to be better than Unipolar Resistive Switching devices in terms of data retention, device consistency, controllability and storage performance 25 . Most of the reports on RS properties of stoichiometric magnetic oxides have used noble (chemically inert) material as an electrode, which generally leads to a unipolar behaviour of the device 24 , 26 – 28 . However, using a chemically active material as an electrode can lead to bipolar type of RS and can enhance the performance of the RS device.…”

Research progresses of resistive random access memory

“…压扫描操作模式 [83] , 在1T1R结构的Cu/HfO2/Pt RRAM 器件中观测到了Cu导电细丝从开始的分立式生长, 到 量子电导形成, 以及最后完成晶化形成完整的导电通 道的完整过程, 在原子尺度揭示了导电通道生长的精 细动力学过程 [89] , 导电细丝在生长过程中每次改变一 中国科学院微电子研究所刘明和龙世兵研究员课 题组 [195,198] (1) 阻变效应与磁调制效应通过磁性导电细丝或 氧空位含量的耦合 [218][219][220][221][222][223][224][225][226] . 这种耦合能够在同一个器 件中通过电场同时实现阻态和铁磁性的可控调制, 获 得新型多功能存储器件.…”

“…具体包括两种情况: 以磁性 金属细丝为载体, 细丝的形成和断裂分别对应于低/ 高阻态和强/弱磁性 [219] ; 以氧空位为载体, 氧空位含量 的高低对于不同的阻态和磁性 [218,[220][221][222][223][224][225][226] . 南京大学都 有为院士课题组 [219] 开展了Au/NiO/Pt单极性阻变器件 的磁性研究, 金属Ni细丝导致高低阻态和磁性的变化, 而且磁态具有非挥发性. 清华大学潘峰和宋成教授课 题组 [225] 报道了双极性Pt/Co:ZnO/Pt阻变器件中氧空位 细丝导致高低阻态和磁性的变化, 并给出了一些定性 的磁性变化机制分析.…”

Stability and its mechanism in Ag/CoOx/Ag interface-type resistive switching device

“…The resistive random access memory (RRAM), showing high storage density and high speed, can meet the requirements of the next generation memory 1 2 . Therefore, the fundamental physics in RRAM, namely the resistive switching (RS) effect, has been intensively studied 3 4 5 6 7 8 9 10 11 12 . The RS effect exists in various materials including complex oxides, such as La 0.7 Sr 0.3 MnO 3 3 , Pr 0.7 Ca 0.3 MnO 3 4 , and binary transition metal oxides, such as CuO x 5 , FeO x 6 , NiO x 7 8 , CoO x 9 10 , TiO x 11 , and HfO x 12 .…”