Electrical controlled magnetism in FePt film with the coexistence of two phases

Yang, Yanting; Wen, Jinsheng; Xiong, Yifeng; Ma, Lei; Lv, L. Y.; Cao, Qingqi; Wang, D. H.; Du, Youwei

doi:10.1063/1.4913616

Cited by 9 publications

(5 citation statements)

References 28 publications

(37 reference statements)

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“…Furthermore, because the maximum deformation magnitude of ferroelectrics is usually below 1%, , the transferrable lattice strain in the attached film is normally limited to be less than 0.5%. The strain induced magnetoelastic energy to the film (∼10 4 J/m 3 ) can only achieve values comparable to the magnetocrystalline anisotropy energy of low K u materials such as Ni, Co, CoFe, ,, the effective H C tunability in large K u materials , is very limited. The achievable lattice strain, H C variation, and sensitivity of H C change to strain level in some typical magnetic materials deposited on ferroelectric substrates ,,,, are summarized in Figure S1.…”

Section: Introductionmentioning

confidence: 99%

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Feng

Zhao

Yang

et al. 2016

ACS Appl. Mater. Interfaces

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Reversible and nonvolatile modulation of magnetization switching characteristic in ferromagnetic materials is crucial in developing spintronic devices with low power consumption. It is recently discovered that strain engineering can be an active and effective approach in tuning the magnetic/transport properties of thin films. The primary method in strain modulation is via the converse piezoelectric effect of ferroelectrics, which is usually volatile due to the reliance of the required electric field. Also the maximum amount of deformation in ferroelectrics is usually limited to be less than 1%, and the corresponding magnetoelastic strain energy introduced to ferromagnetic films is on the order of 10(4) J/m(3), not enough to overcome magnetocrystalline anisotropy energy (Ku) in many materials. Different from using conventional strain inducing substrates, this paper reports on the significantly large, reversible, and nonvolatile lattice strain in the L10-FePt films (up to 2.18%) using nonelectrically controlled shape memory alloy substrates. Introduced lattice strain can be large enough to effectively affect domain structure and magnetic reversal in FePt. A noticeable decrease of coercivity field by 80% is observed. Moreover, the coercivity field tunability using such substrates is nonvolatile at room temperature and is also reversible due to the characteristics of the shape memory effect. This finding provides an efficient avenue for developing strain assisted spintronic devices such as logic memory device, magnetoresistive random-access memory, and memristor.

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Section: Introductionmentioning

confidence: 99%

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Feng

Zhao

Yang

et al. 2016

ACS Appl. Mater. Interfaces

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“…Electric field (E-field) modulates magnetism is one of the most energy-efficient pathways toward fast, compact, and light-weight devices. Conventional magnetoelectric (ME) devices based on rigid, planar chips achieve voltage control magnetism by the virtue of a strain-induced inverse magnetostriction effect or interface charge accumulation. − For flexible ME devices, the materials will be bent, stretched, or even twisted, and such variable strain conditions are fatal for strain-mediated ME coupling . In contrast, the charge-mediated ME coupling mechanism became a practical approach.…”

mentioning

confidence: 99%

Low-Voltage Control of (Co/Pt)_x Perpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics

Zhao

Zhou

et al. 2018

ACS Nano

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The trend of mobile Internet requires portable and wearable devices as bio-device interfaces. Electric field control of magnetism is a promising approach to achieve compact, light-weight, and energy-efficient wearable devices. Within a flexible sandwich heterostructure, perpendicular magnetic anisotropy switching was achieved via low-voltage gating control of an ionic gel in mica/Ta/(Pt/Co) /Pt/ionic gel/Pt, where (Pt/Co) acted as a functional layer. By conducting in situ VSM, EPR, and MOKE measurements, a 1098 Oe magnetic anisotropy field change was determined at the bending state with tensile strain, corresponding to a magnetic anisotropy energy change of 3.16 × 10 J/m and a giant voltage tunability coefficient of 0.79 × 10 J/m·V. The low voltage and strain dual control of magnetism on mica substrates enables tunable flexible spintronic devices with an increased degree of manipulation.

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“…The remarkable strain transfer on membranes bonded by SU-8 is attributed to the excellent wettability of the polymer when heated up during the bonding process, which fills the gaps between the PMN-PT and the membrane. Moreover, the observed strain transfer efficiency is higher than that reported on epitaxially grown SrTiO3:Ni 2+ or NdNiO3/SrTiO3 or thin films on PMN-PT substrates [62,63], and similar to epitaxial La0.335Pr0.335Ca0.33MnO3 films [64] with a thickness 10 times lower than the GaAs membranes employed in Ref. [50].…”

Section: 23-nanomembranes Transferred By Polymer-based Bondingmentioning

confidence: 55%

Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

Martín‐Sánchez

Trotta

Mariscal

et al. 2017

Semicond. Sci. Technol.

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The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials' emission properties such as their emission energy, finestructure-splitting in self-assembled InAs quantum dots and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs quantum dots. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.

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Electrical controlled magnetism in FePt film with the coexistence of two phases

Cited by 9 publications

References 28 publications

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Low-Voltage Control of (Co/Pt)_x Perpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics

Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

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Electrical controlled magnetism in FePt film with the coexistence of two phases

Cited by 9 publications

References 28 publications

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L10-FePt Films via Nonelectrically Controlled Strain Engineering

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L10-FePt Films via Nonelectrically Controlled Strain Engineering

Low-Voltage Control of (Co/Pt)x Perpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics

Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

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Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L1₀-FePt Films via Nonelectrically Controlled Strain Engineering

Low-Voltage Control of (Co/Pt)_x Perpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics