Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

Martín‐Sánchez, Javier; Trotta, Rinaldo; Mariscal, Antonio Joaquín Franco; Serna, Rosalía; Piredda, Giovanni; Stroj, Sandra; Edlinger, Johannes; Schimpf, Christian; Aberl, Johannes; Lettner, Thomas; Wildmann, Johannes S.; Huang, Huiying; Yuan, Xueyong; Ziss, Dorian; Stangl, J.; Rastelli, Armando

doi:10.1088/1361-6641/aa9b53

Cited by 66 publications

(60 citation statements)

References 139 publications

(366 reference statements)

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“…People have demonstrated tuning the energies of optical transitions in QDs and CQDs using temperature, DC electric field, AC electric field, and strain . Tuning via the Stark shift induced by a DC electric field is the most common method employed.…”

Section: Tunable Optical Propertiesmentioning

confidence: 99%

Self‐Assembled InAs/GaAs Coupled Quantum Dots for Photonic Quantum Technologies

Jennings

Wickramasinghe

et al. 2019

Adv Quantum Tech

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Coupled quantum dots (CQDs) that consist of two InAs QDs stacked along the growth direction and separated by a relatively thin tunnel barrier have been the focus of extensive research efforts. The expansion of available states enabled by the formation of delocalized molecular wavefunctions in these systems has led to significant enhancement of the already substantial capabilities of single QD systems and have proven to be a fertile platform for studying light–matter interactions, from semi‐classical to purely quantum phenomena. Observations unique to CQDs, including tunable g‐factors and radiative lifetimes, in situ control of exchange interactions, coherent phonon effects, manipulation of multiple spins, and nondestructive spin readout, along with possibilities such as quantum‐to‐quantum transduction with error correction and multipartite entanglement, open new and exciting opportunities for CQD‐based photonic quantum technologies. This review is focused on recent CQD work, highlighting aspects where CQDs provide a unique advantage and with an emphasis on results relevant to photonic quantum technologies.

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Section: Tunable Optical Propertiesmentioning

confidence: 99%

Self‐Assembled InAs/GaAs Coupled Quantum Dots for Photonic Quantum Technologies

Jennings

Wickramasinghe

et al. 2019

Adv Quantum Tech

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“…To the best of our knowledge this is the first demonstration of a strain-induced dipole rotation for a room-temperature SPE. [41,42] The reorientation of the dipole in response to strain is an unexpected and a surprising result.…”

Section: Figure 2 Large Red and Blue Strain-induced Shifts In A-b mentioning

confidence: 99%

Tuning of Quantum Emitters in Hexagonal Boron Nitride

Mendelson

Nikolay

et al. 2019

Conference on Lasers and Electro-Optics

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Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile strain to quantum emitters embedded in few-layer hBN films and realize both red and blue spectral shifts with tuning magnitudes up to 65 meV, a record for any two-dimensional quantum source. We demonstrate reversible tuning of the emission and related photophysical properties. We also observe rotation of the optical dipole in response to strain, suggesting the presence of a second excited state. We derive a theoretical model to describe strain-based tuning in hBN, and the rotation of the optical dipole. Our work demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.Single photon emitters (SPEs) embedded in solid state hosts are critical building blocks for a range of quantum technologies. [1][2][3] Integrating SPEs with on-chip nanophotonic components provides a scalable route towards the engineering of quantum gates and quantum circuitry. [4][5][6] However, unwanted interactions between the atom-like defects and the crystal host environment lead to spectral inhomogeneity that hinders device performance. To address this issue, methods for tuning emitter properties are critical for generating identical photons, [7][8][9] and for coupling to high-quality factor photonic resonators, where tuning magnitudes must be comparable to or greater than the cavity linewidths. [10] Recently, hexagonal boron nitride (hBN), has been shown to host a range of sub-band gap defects operating as room temperature SPEs. [11][12][13][14] These SPEs display a number of desirable properties, including high photon purity, [15] bright emission, [16] and favorable quantum efficiencies. [17] However, the emitters have been shown to be susceptible to environmental influences, which lead to extreme inhomogeneity in their emission properties, [18] including a broad, continuous spectral range of zero phonon lines spanning from the deep ultraviolet to the near infrared. [19][20][21] Consequently, reliable tuning methods for controlling the emission properties are paramount for their implementation in quantum photonic applications.

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“…One should understand the interfacial structure in detail by means of structural investigations performed in situ during pulsed-laser deposition (PLD). This approach reveals how the structural setup of the layer/substrate interface would affect the structure and the morphology of the deposited h-LuFeO 3 .Epitaxial strain is an extremely important issue in epitaxial thin film growth because the strain may change the properties of the epilayer, offering opportunities of material engineering; see the reviews in References [12,13], among others. For the Al 2 O 3 (0001) substrates, the lattice mismatch of the supercell is small but the huge misfit of the lattice constant suggests weak interfacial bonding [10].…”

mentioning

confidence: 99%

“…Epitaxial strain is an extremely important issue in epitaxial thin film growth because the strain may change the properties of the epilayer, offering opportunities of material engineering; see the reviews in References [12,13], among others. For the Al 2 O 3 (0001) substrates, the lattice mismatch of the supercell is small but the huge misfit of the lattice constant suggests weak interfacial bonding [10].…”

mentioning

confidence: 99%

Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

et al. 2019

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Structural quality of LuFeO 3 epitaxial layers grown by pulsed-laser deposition on sapphire substrates with and without platinum Pt interlayers has been investigated by in situ high-resolution X-ray diffraction (reciprocal-space mapping). The parameters of the structure such as size and misorientation of mosaic blocks have been determined as functions of the thickness of LuFeO 3 during growth and for different thicknesses of platinum interlayers up to 40 nm. By means of fitting of the time-resolved X-ray reflectivity curves and by in situ X-ray diffraction measurement, we demonstrate that the LuFeO 3 growth rate as well as the out-of-plane lattice parameter are almost independent from Pt interlayer thickness, while the in-plane LuFeO 3 lattice parameter decreases. We reveal that, despite the different morphologies of the Pt interlayers with different thickness, LuFeO 3 was growing as a continuous mosaic layer and the misorientation of the mosaic blocks decreases with increasing Pt thickness. The X-ray diffraction results combined with ex situ scanning electron microscopy and high-resolution transmission electron microscopy demonstrate that the Pt interlayer significantly improves the structure of LuFeO 3 by reducing the misfit of the LuFeO 3 lattice with respect to the material underneath.the hexagonal phase depend strongly on the mutual orientation of the layer and substrate lattices (epitaxial orientation) as well as on the epitaxial strain (misfit). The epitaxial orientation is determined by the minimum free energy, which is related to the bonding across the substrate-epilayer interface and to the mismatch of the substrate and layer lattices. It is recognized that, despite the triangular symmetry matching on the abovementioned substrates, there is no obvious lattice match between h-RFeO 3 and Al 2 O 3 (0001) (a = 4.7602 Å), yttrium-stabilized zirconia (YSZ) (111) (a = 7.30 Å), or Pt (111) (a = 5.548 Å) [10].Nevertheless, an epitaxial growth of h-LuFeO 3 (LFO) could be obtained using the pulsed-laser deposition [6][7][8][9]11]. This means that the azimuthal epitaxial orientation of h-LuFeO 3 films cannot be explained simply by the lattice mismatch. One should understand the interfacial structure in detail by means of structural investigations performed in situ during pulsed-laser deposition (PLD). This approach reveals how the structural setup of the layer/substrate interface would affect the structure and the morphology of the deposited h-LuFeO 3 .Epitaxial strain is an extremely important issue in epitaxial thin film growth because the strain may change the properties of the epilayer, offering opportunities of material engineering; see the reviews in References [12,13], among others. For the Al 2 O 3 (0001) substrates, the lattice mismatch of the supercell is small but the huge misfit of the lattice constant suggests weak interfacial bonding [10]. The growth of an additional Pt interlayer aims on the one side to reduce the lattice mismatch between the deposited h-LuFeO 3 layer and Al 2 O 3 (0001) substrate an...

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Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

Cited by 66 publications

References 139 publications

Self‐Assembled InAs/GaAs Coupled Quantum Dots for Photonic Quantum Technologies

Self‐Assembled InAs/GaAs Coupled Quantum Dots for Photonic Quantum Technologies

Tuning of Quantum Emitters in Hexagonal Boron Nitride

Structure Quality of LuFeO3 Epitaxial Layers Grown by Pulsed-Laser Deposition on Sapphire/Pt

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