“…[24,30] However, recent studies of current or field effect in LPCMO epitaxial films are rising again with different modulation and inspection in the phase separation picture. [31][32][33][34][35][36][37] Compared with La 1−x Ca x MnO 3 and La 0.67 Sr 0.33 MnO 3 films, the current effect in LPCMO is expected to be distinct, because the intrinsic charge-ordered phase in LPCMO with a size in the mesoscopic range is easily modulated by electric current or field. In this work, we studied the current effect in La 5/8−y Pr y Ca 3/8 MnO 3 epitaxial film with doping level of y = 0.265.…”
The electroresistance (ER) of La 0.36 Pr 0.265 Ca 0.375 MnO 3 (LPCMO) epitaxial thin film was studied under various dc currents. The current effect was compared for the unpatterned film and patterned microbridge with a width of 50 µm. The value of ER in the unpatterned LPCMO film could reach 0.54 under a 1-mA current, which is much higher than ER under 1 mA for the patterned weak phase-separated La 0.67 Ca 0.33 MnO 3 and La 0.85 Sr 0.15 MnO 3 microbridges with 50µm width. More interestingly, for the patterned LPCMO microbridge, the maximum of ER can reach 0.6 under a small current of 100 µA. The results were explained by considering the coexistence of ferromagnetic metallic phase with the charge-ordered phase, and the variation of the phase separation with electric current.
“…[24,30] However, recent studies of current or field effect in LPCMO epitaxial films are rising again with different modulation and inspection in the phase separation picture. [31][32][33][34][35][36][37] Compared with La 1−x Ca x MnO 3 and La 0.67 Sr 0.33 MnO 3 films, the current effect in LPCMO is expected to be distinct, because the intrinsic charge-ordered phase in LPCMO with a size in the mesoscopic range is easily modulated by electric current or field. In this work, we studied the current effect in La 5/8−y Pr y Ca 3/8 MnO 3 epitaxial film with doping level of y = 0.265.…”
The electroresistance (ER) of La 0.36 Pr 0.265 Ca 0.375 MnO 3 (LPCMO) epitaxial thin film was studied under various dc currents. The current effect was compared for the unpatterned film and patterned microbridge with a width of 50 µm. The value of ER in the unpatterned LPCMO film could reach 0.54 under a 1-mA current, which is much higher than ER under 1 mA for the patterned weak phase-separated La 0.67 Ca 0.33 MnO 3 and La 0.85 Sr 0.15 MnO 3 microbridges with 50µm width. More interestingly, for the patterned LPCMO microbridge, the maximum of ER can reach 0.6 under a small current of 100 µA. The results were explained by considering the coexistence of ferromagnetic metallic phase with the charge-ordered phase, and the variation of the phase separation with electric current.
“…4(d) further confirm that the P À 2 sample had the highest catalytic activity. 27,30,35 These results show that the OER on the film surface is promoted in samples treated with an appropriate electric-field polarization. 19,30,34 As noted earlier, because a PMNPT single crystal has obvious piezoelectric characteristics, its lattice constant will change periodically in the presence of an alternating electric field, and this can be used to achieve in situ strain regulation.…”
Section: Resultsmentioning
confidence: 63%
“…16,18 The change of the intrinsic electronic structure of the SIO film then results a change in its ρ value. 24,27 After the removal of the external electric field, these changes do not disappear completely. The resistivity of P − 2 is larger than that of P + 2 because the ferroelectric domains inside PMNPT flip over under the influence of the different polarization electric fields, resulting in different lattice strains; the resistivity of the SIO thin films is thus different under the action of electric fields of positive and negative polarization.…”
Section: Resultsmentioning
confidence: 99%
“…16 After an electric field is applied in the (001) direction, the resistance of the SIO film can be tuned and modulated in situ by non-180° ferroelectric domain rotation-induced strain in the PMNPT layer. 27,28 This approach provides a new way to change the structures of thin films using the substrate and thus to regulate their electrocatalytic properties. 29,30…”
Section: Introductionmentioning
confidence: 99%
“…16 After an electric field is applied in the (001) direction, the resistance of the SIO film can be tuned and modulated in situ by non-1801 ferroelectric domain rotation-induced strain in the PMNPT layer. 27,28 This approach provides a new way to change the structures of thin films using the substrate and thus to regulate their electrocatalytic properties. 29,30 In this work, we epitaxially grew SIO thin films on a PMNPT single-crystal substrate, and the polarization of the PMNPT substrate was used to influence the electron-transfer behavior of the SIO films and regulate their electrocatalytic performance.…”
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