Interface stability and microstructure of an ultrathin α-Ta/graded Ta(N)/TaN multilayer diffusion barrier

Liu, C. H.; Liu, W.; Wang, Y. H.; Wang, Y.; An, Zhu; Song, Zhong Xiao; Xu, Ke

doi:10.1016/j.mee.2012.05.054

Cited by 7 publications

(5 citation statements)

References 26 publications

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“…Figure presents the performance comparison of our MON film and previously reported barrier films. As shown in Figure a, the thicknesses of the CVD Mn-based and PVD barrier films, including Mo, Ru, Ti, Cr, Nb, Ru–Ti, ZrN, , WN, Ta/TaN, Cu–Mn, and MnO, range from 4.5 to 60 nm and their failure temperatures vary from 350 to 700 °C. However, our 3.7 nm barrier exhibits a failure temperature up to 650 °C.…”

Section: Results and Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion

Wang

Liu

et al. 2020

ACS Appl. Electron. Mater.

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Low resistivity, high conformability, and ultrathin barriers against Cu diffusion have always been a critical challenge for fabrications of extremely large-scale integrated circuits. In this article, manganese oxynitride (MON) barriers against Cu diffusion are explored by plasma-enhanced atomic layer deposition (PE-ALD) with Mn(EtCp)2 and NH3 precursors, demonstrating a growth rate of ∼0.39 Å/cycle and a root-mean-square (RMS) roughness down to 0.38 nm in the temperature range of 225–300 °C. As the deposition temperature increases from 225 to 300 °C, the atomic ratio of Mn/N in the as-deposited film increases from 1.96 to 2.7; however, the percentage of oxygen always stabilizes at 19 ± 1%, which results from the residual oxygen in the chamber. The film resistivity reduces from 3.4 × 10–2 to 5.5 × 10–3 Ω·cm and the film density increases from 5.35 to 5.61 g/cm3 with the increase of deposition temperature. Only a 2.4 nm MON film can effectively prevent Cu atoms from diffusing through it even after annealing at 550 °C for 30 min, and the failure temperature can be elevated to 650 °C for the 3.7 nm MON barrier. Further, the failure mechanism of the MON diffusion barrier is also addressed. Owing to combined advantages of ultrathin and uniform thickness, good conductivity, and excellent barrier effect, the PE-ALD MON ultrathin film is thus very promising for nanoscale copper interconnection technologies.

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Section: Results and Discussionmentioning

confidence: 99%

“…(a) Thickness and failure temperature comparisons of the MON film with other CVD Mn-based and PVD barrier films − ,, and (b) thickness, conductivity, and failure temperature comparisons of the MON film with other ALD barrier films. ,− , …”

Section: Results and Discussionmentioning

confidence: 99%

Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion

Wang

Liu

et al. 2020

ACS Appl. Electron. Mater.

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“…135,136 This nullified the benefits of capacitance scaling by implementing increasingly difficult to integrate highly porous extreme low-k ILD materials. 102 Further, efforts to downscale the thickness of the TNT barrier [136][137][138][139] or adopt alternate metallization materials [140][141][142][143][144][145] to mitigate the resistivity impact were only exacerbated by the use of highly porous ILD materials. Similarly, continued delays in the availability of EUV lithography [146][147][148] forced the adoption of intricate pitch division/multi-patterning techniques 149,150 that multiplied the patterning induced damage and increase in k value for porous ILDs.…”

Section: The End Of Permittivity Scaling?mentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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“…Transition metal nitrides, especially tantalum nitride (TaN), are in high demand for a wide range of applications due to their high melting point, hardness, excellent wear and corrosion resistance, refractory character, mechanical and high-temperature stability, chemical inertness, and histocompatibility [1][2][3][4][5][6]. Some prominent examples of such applications are as a protective coating material against oxidation and corrosion [7], as a diffusion barrier for Al and Cu metallization in advanced microelectronics [8][9][10][11], in phosphide and nitride optoelectronics as ohmic contact [3,4], in artificial heart valves as histocompatibility materials [12], thin film resistors [13], as ceramic pressure sensors [14], and also different mechanical applications [5,6]. The large interest for TaN arises since it is considered recently as a high thermal conductive material in microelectronic chips for the θ-TaN phase [15].…”

Section: Introductionmentioning

confidence: 99%

Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Rasadujjaman

Wang

et al. 2021

Coatings

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By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

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Interface stability and microstructure of an ultrathin α-Ta/graded Ta(N)/TaN multilayer diffusion barrier

Cited by 7 publications

References 26 publications

Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion

Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

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