Interface formation between deposited Sn and Hg0.8Cd0.2Te

Zimmermann, H.; Keller, Robert C.; Meisen, P.; Richter, Hans; Seelmann‐Eggebert, M.

doi:10.1007/bf02655022

Cited by 4 publications

(1 citation statement)

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“…The STM measurements reveal domains with a shape close to hexagonal, which could result from twinning, i.e, an overlap of two 60 • -rotated triangular domains. Twinning was indeed reported for α-Sn films on Hg 0.8 Cd 0.2 Te(111) substrates 41 . The lateral size of domains ranges from 7× to 8× lattice constant of unstrained α-Sn (a = 4.59 Å).…”

Section: Methodsmentioning

confidence: 64%

Tailoring the topological surface state in ultrathin α -Sn(111) films

et al. 2019

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We report on the electronic structure of α-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200 meV below the Fermi level in 10-nm-thick films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of α-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure and one can expect the presence of a 1D helical edge states.

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Section: Methodsmentioning

confidence: 64%