Interface coupling effects in thin silicon-on-insulator MOSFET's

Optimization of Photoelectron In-Situ Sensing Device in FD-SOI

“…As the backgate voltage VBG is made more negative, the threshold voltage VTH of the top N-type MOSFET increases; whereas a positive VBG reduces VTH. This interface coupling effect is quite well-known and is currently used for VTH tuning in FD-SOI MOSFETs [12][13][14].…”

Low frequency noise in multi-gate SOI CMOS devices

“…The low frequency (LF) noise being attributed to the fluctuations of the current in MOS transistors would thereby be influenced by the back-gate quality and bias [15].…”

Low Frequency Noise in Double-Gate SOI CMOS Devices

“…(4.2) also apply to the non-linear regime of MOSFET operation [9]. Indeed, the drain voltage dependence of S Id /I 2 d is naturally accounted for by that of the transconductance to drain current ratio squared (g m /I d ) 2 . This can been checked experimentally by comparing the respective variations with drain voltage V d of S Id /I 2 d and (g m /I d ) 2 .…”

“…However, since the carriers in these devices encounter two or more interfaces, the current transport and, hence the fluctuations, will be affected by the back interface, giving rise to coupling effects. The low frequency noise (LFN) being attributed to the fluctuations of the current in MOS transistors would thereby be influenced by the back gate quality and bias [2]. Indeed, excessive low frequency noise and fluctuations could lead to serious limitation of the functionality of the analog and digital circuits.…”