Interdiffusion of In, Te at the interface of molecular beam epitaxial grown   heterostructures

Kimata, Morihiko; Suzuki, Takeshi; Shimomura, K.; Yano, Mitsuaki

doi:10.1016/0022-0248(94)00522-2

Cited by 13 publications

(12 citation statements)

References 9 publications

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“…However, depositing an a-Sn layer at the interface and/or Cd overpressure during initial growth can prevent interdiffusion of In and Te and the formation of the In 2 Te 3 compound at the CdTe/ InSb interface. 12,35 Figure 4b indicates that, after annealing at 235°C for 24 h under Hg overpressures, the In outdiffuses to about 0.5 lm from the interface. When compared to the as-grown heterostructure, a higher In concentration of 1.4 · 10 16 cm -3 is observed in the region from 0.5 lm to about 1.5 lm of depth.…”

Section: Standard Annealing Processmentioning

confidence: 96%

“…12,35,42 In addition, in our desired application HgCdTe/CdTe/ InSb will be subjected to annealing processes under Hg overpressure. To address these concerns, a set of annealing experiments was performed to determine whether the CdTe epilayers grown on the InSb (112)B substrate can withstand such a process.…”

Section: Standard Annealing Processmentioning

confidence: 99%

“…9,10 In addition, the cost of InSb substrates is far less than that of CdZnTe substrates. A variety of cleaning procedures including thermal desorption in the absence and in the presence of Sb overpressures, [11][12][13][14][15] atomic and molecular hydrogen treatments, [14][15][16][17] ion bombardment and annealing, 11,[18][19][20] and wet etches [21][22][23][24][25] have been reported to prepare InSb (111), (100), and (110) orientations. These studies address the problems associated with in vacuo thermal cleaning since the InSb oxide desorption temperature is close to the melting point of InSb ($527°C).…”

Section: Introductionmentioning

confidence: 99%

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Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

Jaime-Vasquez

Martinka

Stoltz

et al. 2008

Journal of Elec Materi

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Plasma etching of (112)B InSb to prepare this semiconductor for the heteroepitaxy deposition of CdTe and initial studies of CdTe epilayers grown by molecular beam epitaxy (MBE) on InSb (112)B substrates cleaned with various plasma treatments are presented. X-ray diffraction rocking curve maps of the MBE CdTe epilayers on 3-inch InSb (112)B substrates have full-width at half-maxima (FWHM) values in the range of 20 arcsec to 30 arcsec. An etch pit density analysis of the 3-inch CdTe epilayers reveals a defect density of 1.0 · 10 7 cm -2 and 7.7 · 10 5 cm -2 at the center and edge of the wafer, respectively. Evaluation of a standard HgCdTe annealing process suggests that the removal of the InSb substrate is likely to be needed prior to any postgrowth annealing in Hg overpressure. Finally, we present a low-energy helium plasma exposure of wet-etched InSb (112)B substrates that provides a uniform epi-ready surface that is nearly stoichiometric, and free of oxide and residual contaminants.

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Section: Standard Annealing Processmentioning

confidence: 96%

Section: Standard Annealing Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

Jaime-Vasquez

Martinka

Stoltz

et al. 2008

Journal of Elec Materi

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“…[2][3][4] Only few works have attempted to grow CdTe on InSb͑111͒ polar substrates. 5,6 A report comparing the growth on both faces of InSb͑111͒ was found only for the alloy ZnCdTe, concluding better structural and optical properties for the growth on the B face, with no explanation.…”

Section: Introductionmentioning

confidence: 99%

Phase stability during molecular beam epitaxial growth of CdTe on InSb(111) substrates

Huerta¹,

López

Zelaya-Ángel

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A study of CdTe layers grown by molecular beam epitaxy on InSb(111)A (In terminated), and (111)B (Sb terminated) substrates is reported. The growth of CdTe on InSb(111) substrates was studied in situ by reflection high-energy electron diffraction, and characterized by atomic force microscopy, Raman spectroscopy, x-ray diffraction, and photoreflectance. We observed a markedly different CdTe growth behavior on InSb(111)A and B surfaces. CdTe grows nearly two dimensionally on the (111)B surface, whereas on the A surface a three-dimensional growth is obtained, resulting in polycrystalline regions with zinc-blende and wurtzite phases. Our results indicate that In–Te compounds are formed at the CdTe/InSb interface. The amount of these compounds is larger on the (111)A face, thus hindering the smooth CdTe growth on this face.

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“…The thermal expansion coefficient of both compounds is also very similar; therefore InSb is an ideal substrate for the epitaxial growth of CdTe. However, since these compounds belong to different semiconductor families, the different electronegativities of the constituent atoms, 1) sticking coefficient of source beam fluxes, 2) phenomena like the interdiffusion of In and Te atoms, 3,4) and the formation of III-VI compounds, 5) hinder the heteroepitaxial growth.…”

Section: Introductionmentioning

confidence: 99%

Molecular Beam Epitaxial Growth of CdTe Layers on InSb(111)A and B Polar Substrates

Huerta-Ruelas¹,

López‐López²,

Zelaya-Ángel³

2000

Jpn. J. Appl. Phys.

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We report a study of CdTe layers grown by molecular beam epitaxy (MBE) on InSb(111)A and InSb(111)B substrates. The CdTe/InSb(111) heterostructures, prepared under different conditions, were characterized in-situ by reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). Ex-situ atomic force microscopy (AFM) and Raman spectroscopy were also applied. Our results indicate that In-Te compounds are formed at the interface. The concentrations of these compounds depend on substrate preparation, polarity of the (111) substrate, and annealing process before growth. As shown by RHEED and AFM, CdTe grows nearly two dimensionally on the (111)B surface, whereas on the A face a three dimensional growth, with polycrystalline regions, is obtained.

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Interdiffusion of In, Te at the interface of molecular beam epitaxial grown heterostructures

Cited by 13 publications

References 9 publications

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors

Phase stability during molecular beam epitaxial growth of CdTe on InSb(111) substrates

Molecular Beam Epitaxial Growth of CdTe Layers on InSb(111)A and B Polar Substrates

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