A study of CdTe layers grown by molecular beam epitaxy on InSb(111)A (In terminated), and (111)B (Sb terminated) substrates is reported. The growth of CdTe on InSb(111) substrates was studied in situ by reflection high-energy electron diffraction, and characterized by atomic force microscopy, Raman spectroscopy, x-ray diffraction, and photoreflectance. We observed a markedly different CdTe growth behavior on InSb(111)A and B surfaces. CdTe grows nearly two dimensionally on the (111)B surface, whereas on the A surface a three-dimensional growth is obtained, resulting in polycrystalline regions with zinc-blende and wurtzite phases. Our results indicate that In–Te compounds are formed at the CdTe/InSb interface. The amount of these compounds is larger on the (111)A face, thus hindering the smooth CdTe growth on this face.
Articles you may be interested inTwo dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures J. Appl. Phys. 94, 2464 (2003); 10.1063/1.1588360 Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures J.We report a study of AlGaAs/GaAs semiconductor heterostructures with a two-dimensional electron gas system grown under different conditions by molecular beam epitaxy in three different laboratories. We performed photoreflectance ͑PR͒ measurements of this set of samples and analyzed the Franz-Keldysh oscillations associated with the E 0 transition of GaAs. We found that the sample with the highest electron mobility, as observed in Hall measurements at 77 K exhibited the lowest electric field strength. In addition, the 12 K photoluminescence ͑PL͒ spectra of the samples revealed intense and narrow free exciton luminescence in the sample with the highest electron mobility, while samples with lower mobility values showed impurities related PL lines. It is suggested that the electron mobility is affected by unintentional C impurities, which act like dispersion centers in the 2-DEG and increase the internal electric fields in the GaAs region. On the other hand, the PR spectra close to the AlGaAs band-gap energy region presented broad PR signals, due to the Si-doping in the alloy. The sample with the highest quality presented the most intense AlGaAs PR signal. We believe that low AlGaAs PR signal intensities are caused by unintentional incorporation of impurities during the preparation of the samples, which degrade the optical properties of the alloy.
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