Molecular Beam Epitaxial Growth of CdTe Layers on InSb(111)A and B Polar Substrates

Huerta-Ruelas, Jorge A.; López‐López, M.; Zelaya-Ángel, O.

doi:10.1143/jjap.39.1701

Cited by 14 publications

(7 citation statements)

References 22 publications

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“…Key issues of these investigations were, e.g. the phase stability during MBE on (001) and (111) substrates , the application of laser deposition , rf‐sputtering deposition , or temperature‐gradient vapour transport deposition . Furthermore, the influence of substrate preparation and the application of α‐Sn interlayers were explored.…”

Section: Resultsmentioning

confidence: 99%

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Geurts

2014

Phys. Status Solidi B

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This review focuses on the analysis of buried semiconductor interfaces by Raman spectroscopy, i.e. inelastic light scattering. Simultaneous access to structural and electronic properties can be obtained by employing phonon Raman scattering, induced by deformation potential, or alternatively by the electric-field induced Fröhlich mechanism, as well as Raman scattering from coupled plasmon-LO-phonon modes. Structural information may comprise intermixing, reactivity, strain and interfacial atomic bond sequences. The main electronic properties derived from Raman spectroscopy are the doping levels of the constituent layers, the interfacial electric field strengths and the free-carrier depletion layer widths. Attention is paid also to the possibility of in situ growth monitoring by Raman spectroscopy. Examples of semiconductor interface analysis are presented for heterovalent interfaces between II-VI and III-V semiconductors, especially ZnSe/GaAs(001) and CdTe/ InSb(001), as well as for heavily strained CdTe monolayers, embedded in a BeTe epilayer on GaAs(001).

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Section: Resultsmentioning

confidence: 99%

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Geurts

2014

Phys. Status Solidi B

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“…The highest energy peaks at 165 cm −1 and at 140 cm −1 correspond to the longitudinal (LO) and to the transverse (TO) modes, respectively, of the CdTe bulk crystal [18,19], whereas the peak at 122 cm −1 , is related to the TeO 2 Raman vibrational mode [18]. The entire film area was tested point by point, showing no significant changes among the different spectra, thus indicating a good homogeneity of the deposited film.…”

Section: Raman Spectramentioning

confidence: 99%

A novel industrial thin film deposition technology for sustainable CdTe photovoltaics

Nozar¹,

Mittica

Milita³

et al. 2012

MRS Proc.

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CdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. The optical band gap of deposited layers is 1.50 eV, in perfect accord with the value reported in the literature for the crystalline cubic phase of the CdTe.The films are highly crystalline with a predominant cubic phase, a random orientation of the grains of the film and have an extremely low surface roughness of 4.6±0.7 nm r.m.s.. The low roughness, compared to traditional thermal deposition methods (close space sublimation and vapour transport) permits the reduction of the active absorber and n-type semiconductor layers resulting in a dramatic reduction of material usage and the relative deposition issues like safety, deposition rate and ultimately cost

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“…Other techniques such as photoreflectance [10,11], reflectance-difference [12], Raman spectroscopy [13,14], Raman spectroscopy using transient subpicosecond/picosecond [15], reflectivity and picosecond time-resolved photoluminescence [16], transmission, modulated transmission [17] and resonant spin-flip Raman scattering [18] have also been applied to study the II-VI semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Surface dependent behaviour of CdS LO-phonon mode

Molina-Contreras

Medina-Gutiérrez

Frausto-Reyes

et al. 2007

J. Phys. D: Appl. Phys.

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In this paper, we develop a sensitive optical method to monitor the surface roughness in the investigation of surfaces. By applying this method to measure the RMS surface roughness of various surfaces, we found RMS values which are comparable to those obtained by atomic force microscopy measurements. In addition, we present a simple empirical model to calculate the RMS surface roughness which shows very good agreement with the surface roughness measurements taken by the method reported in this paper. Finally, the application of our method to the study of the LO-phonon mode of CdS suggests that its intensity is dominated by the surface roughness. This roughness dependent behaviour of the CdS LO-phonon mode is experimentally confirmed by using an excitation wavelength near its E0 transition.

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Molecular Beam Epitaxial Growth of CdTe Layers on InSb(111)A and B Polar Substrates

Cited by 14 publications

References 22 publications

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

A novel industrial thin film deposition technology for sustainable CdTe photovoltaics

Surface dependent behaviour of CdS LO-phonon mode

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