Interdiffusion in polycrystalline thin-film CdTe/CdS solar cells

Mao, D.; Feng, Liang; Zhu, Y.; Tang, Jinkui; Song, Wooseok; Collins, Reuben; Williamson, D. L.; Trefny, J. U.

doi:10.1063/1.49426

Cited by 17 publications

(4 citation statements)

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“…[4][5][6][7][8][9] The CdCl 2 treatment also causes S from the CdS layer to diffuse into the CdTe at the interface and possibly along the grain boundaries. 4,[10][11][12][13][14] It is frequently surmised that the S diffusion may passivate grain boundaries and relieve lattice mismatch between CdTe and CdS, thereby reducing recombination and improving device performance. 2,15,16 Although the latter concept has great intuitive appeal, lattice mismatch of just a couple tenths of a percent in epitaxial III-V interfaces can cause a network of interface defects.…”

Section: Introductionmentioning

confidence: 99%

Cd Cl 2 treatment, S diffusion, and recombination in polycrystalline CdTe

Metzger¹,

Albin²,

Romero³

et al. 2006

Journal of Applied Physics

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Photoluminescence spectroscopy and decay time measurements of polycrystalline thin film CdTe/CdS solar cellsTime-resolved photoluminescence measurements on glass/ SnO 2 / CdTe and glass/ SnO 2 / CdTe/ CdS structures indicate that the CdCl 2 process, without any S present, significantly reduces recombination. However, S diffusion is required for lifetimes comparable to those observed in high-efficiency solar cells. Low-temperature photoluminescence, cathodoluminescence, and scanning electron images indicate how defect chemistry, grain-boundary passivation, and morphology are affected by S diffusion and the CdCl 2 treatment.

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Section: Introductionmentioning

confidence: 99%

Cd Cl 2 treatment, S diffusion, and recombination in polycrystalline CdTe

Metzger¹,

Albin²,

Romero³

et al. 2006

Journal of Applied Physics

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“…2 In particular, S diffusion into the CdTe layer leads to the formation of a ternary CdTe 1Ϫx S x phase within the CdTe layer. Substantial evidence exists that interdiffusion between CdTe and CdS layers occurs during growth and postgrowth annealing processes.…”

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confidence: 99%

“…2,4 It also enhances interdiffusion. Chemical bath deposition was used to grow a ϳ200-nm-thick CdS layer on SnO 2 .…”

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confidence: 99%

Evidence for grain-boundary-assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions

Herndon

Gupta

Kaydanov

et al. 1999

Applied Physics Letters

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We present a near-field scanning optical microscopy (NSOM) study of S interdiffusion in polycrystalline CdS/CdTe heterojunctions. S diffusion from CdS into CdTe leads to the formation of a CdTe1−xSx ternary phase. Because the band gap of CdTe1−xSx varies with S composition, we were able to combine NSOM with a tunable laser source to microscopically identify S-rich regions in the CdTe layer. S composition was found to be very nonuniform and frequently to be greater along grain boundaries than in the grain centers, identifying grain boundaries as locations of enhanced interdiffusion.

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“…[3][4][5][6] The effect of S diffusing into the CdTe film, forming a ternary alloy of CdTe 1Ϫx S x , has been studied for several years. We find that grain boundaries significantly assist S diffusion in the CdTe layer when the CdTe is grown without the presence of oxygen, i.e., the S diffuses more easily along the grain boundaries than in the grains.…”

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confidence: 99%

Do grain boundaries assist S diffusion in polycrystalline CdS/CdTe heterojunctions?

Yan

Albin

Al‐Jassim

2001

Applied Physics Letters

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We report on a transmission electron microscopy and energy-dispersive x-ray spectroscopy study of S diffusion in polycrystalline CdS/CdTe heterojunctions. We find that grain boundaries significantly assist S diffusion in the CdTe layer when the CdTe is grown without the presence of oxygen, i.e., the S diffuses more easily along the grain boundaries than in the grains. However, grain boundaries do not enhance the S diffusion in CdTe when it is grown in the presence of oxygen. The reason is likely to be the formation of Cd–O bonds at the grain boundaries, which are resistance to the S diffusion.

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Interdiffusion in polycrystalline thin-film CdTe/CdS solar cells

Cited by 17 publications

References 0 publications

Cd Cl 2 treatment, S diffusion, and recombination in polycrystalline CdTe

Cd Cl 2 treatment, S diffusion, and recombination in polycrystalline CdTe

Evidence for grain-boundary-assisted diffusion of sulfur in polycrystalline CdS/CdTe heterojunctions

Do grain boundaries assist S diffusion in polycrystalline CdS/CdTe heterojunctions?

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