Interdiffused quantum wells for lateral carrier confinement in VCSELs

Naone, R.L.; Floyd, Philip D.; Young, D.B.; Hegblom, E.R.; Strand, T. A.; Coldren, L.A.

doi:10.1109/2944.720483

Cited by 22 publications

(11 citation statements)

References 39 publications

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“…This can be done either directly by reducing the mesa radius, or indirectly by improving carrier confinement. Numerous techniques were proposed to inhibit lateral diffusion of carriers, for both edge-emitting (see Reference [27] and references therein) and surface emitting lasers (see Reference [28] and references therein). Quantumdot structures are also promising for providing lateral confinement [29].…”

Section: Application To the Analysis Of Diffusion Lossesmentioning

confidence: 99%

Quasi‐analytic steady‐state solution of VCSEL rate equations including spatial hole burning and carrier diffusion losses

Jungo

Erni

Baechtold

2003

Int J Numerical Modelling

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SUMMARYWe propose a new set of equations describing a cylindrical vertical cavity surface emitting laser (VCSEL) cavity under CW operation, based on the rate equations including lateral carrier diffusion. The only numerical step in the calculation consists in finding the roots of a polynomial expression. This model enables a quasi-instantaneous calculation of the laser's light-current characteristic, including such effects as spatial hole burning, current spreading, inhomogeneous optical intensity distribution, and diffusion losses. An analysis of the VCSELs threshold current and differential quantum efficiency is proposed, which illustrates the interplay between injected current profile and diffusion coefficient.

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Section: Application To the Analysis Of Diffusion Lossesmentioning

confidence: 99%

Quasi‐analytic steady‐state solution of VCSEL rate equations including spatial hole burning and carrier diffusion losses

Jungo

Erni

Baechtold

2003

Int J Numerical Modelling

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“…[6][7][8] Finally, carrier diffusion in the active region ͓usually quantum wells ͑QWs͔͒ increases the effective radius by the diffusion length, typically, 1-2 m. While current spreading can be minimized by proper design of the injection region, carrier diffusion can be suppressed only by applying a lateral carrier confinement in the active region. Several approaches have been reported, such as QW interdiffusion, 9 segmented QWs, 10 and selfassembled QDs, 11 although with limited success, probably due to the need to combine strong carrier confinement and good radiative properties of the active material.…”

Section: Take Down Policymentioning

confidence: 99%

Scaling quantum-dot light-emitting diodes to submicrometer sizes

Fiore¹,

Chen

Ilegems³

2002

Applied Physics Letters

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We introduce a device structure and a fabrication technique that allow the realization of efficient light-emitting diodes (LEDs) with dimensions of the active area in the ≈100 nm range. Using optical lithography, selective oxidation, and an active region consisting of InAs quantum dots (QDs), we fabricated LEDs with light–current–voltage characteristics which scale well with nominal device area down to 600 nm diam at room temperature. The scaling behavior provides evidence for strong carrier confinement in the QDs and shows the potential for the realization of high-efficiency single-photon LEDs operating at room temperature.

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“…[2][3][4][5]. In order to overcome these problems, techniques such as chemical sidewall passivation, impurity induced disordering and semiconductor regrowth are used [5][6][7]. Determination of the diffusion controlled carrier profile is of interest because it determines the transverse dependence of the local gain, and, also it has an influence on the transverse refractive index-profile, which in turn determines the wave-guiding properties of these devices.…”

Section: Introductionmentioning

confidence: 99%

“…Diffusion characteristics have been shown to affect the dynamic behavior, modulation response, mode dynamics and selection, beam quality, threshold current, etc. [2][3][4][5]. In order to overcome these problems, techniques such as chemical sidewall passivation, impurity induced disordering and semiconductor regrowth are used [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

A numerical method for the analysis of nonlinear carrier diffusion in cylindrical semiconductor optoelectronic devices

Shishodia

Sharma

Reddy

2007

Physica Status Solidi (b)

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A numerical method to simulate radial distribution of carrier concentration in cylindrical semiconductor optoelectronic devices is presented. Method is based on the collocation principle and employs sinusoidal functions as the basis. The two approaches, evolutionary as well as iterative are presented for solving the governing differential equations. Coordinate transformation is shown to be extremely advantageous for enhancing the computational efficiency. To illustrate the versatility of the method, several examples where the geometry demands different sets of boundary conditions are included. The application of this technique for analyzing carrier concentration profiles in cylindrical optoelectronic devices, for the first time, has demonstrated its multi-utility in addition to the established ability in solving electromagnetic wave equation.

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Interdiffused quantum wells for lateral carrier confinement in VCSELs

Cited by 22 publications

References 39 publications

Quasi‐analytic steady‐state solution of VCSEL rate equations including spatial hole burning and carrier diffusion losses

Quasi‐analytic steady‐state solution of VCSEL rate equations including spatial hole burning and carrier diffusion losses

Scaling quantum-dot light-emitting diodes to submicrometer sizes

A numerical method for the analysis of nonlinear carrier diffusion in cylindrical semiconductor optoelectronic devices

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