Interactions Between Thick Film Resistors And Alumina Substrate

Moriwaki, H.; Suzuki, Atsushi; Watanabe, Yoshihisa; Ishiwata, Masato; Kamata, Toshihide; Adachi, Kenji

doi:10.1109/iemt.1993.639342

Cited by 6 publications

(4 citation statements)

References 5 publications

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“…10 Furthermore, diverse chemical reactions take place in TFR during firing. It is well known that an alumina dissolves from the substrate into glass matrix of TFR during firing, 11,6 which produces an Al compositional gradient in TFR. Also, it is reported that crystallization of plagioclase phases occurs at boundary between alumina substrate and resistor film.…”

Section: Discussionmentioning

confidence: 99%

“…Also, it is reported that crystallization of plagioclase phases occurs at boundary between alumina substrate and resistor film. 6 Despite the complex unequilibrated microstructure of TFRs, the coincidence of the phase transition scheme with respect to glass composition in terms of a G PbO at 850ЊC suggests that the PbO activity in glass may be the governing factor for the stabil- naturally ascribed to the kinetic aspect of the transition, i.e., to the insufficient diffusion rates of Pb and Si ions. For specimens fired at higher temperatures, alumina dissolution and/or plagio-In terms of the thermodynamic activity of PbO in a glass clase crystallizations that impede microstructural equilibration melt, a G PbO , it was found that the edges of the boundaries in are probably responsible.…”

Section: Discussionmentioning

confidence: 99%

“…This phase has been suggested to be produced X-ray diffractometry, the X-ray intensity and film thickness in the interaction of the glass content with the alumina subwere adjusted to always include reflections from the alumina strate. 6 It is noted in Fig. 6(d) that the phase change from RuO 2 substrate, thus assuring the collection of information from every to Pb 2 Ru 2 O 6.5 takes place after the glass phase decrystallizphase involved in the thick film.…”

Section: Ruo 2 Is Stable In Low-pbo Glass Compositions and At Highmentioning

confidence: 98%

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Decomposition of Ruthenium Oxides in Lead Borosilicate Glass

Adachi

Kuno

1997

Journal of the American Ceramic Society

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industrial systems. In most cases, the dispersed particles react Behaviors of apparent phase changes of Ru-containing more or less with the matrix phases upon firing, and many of oxides in lead borosilicate glass at high temperature have the output properties of the films are affected significantly by been investigated using X-ray diffraction and transmission the chemical stability of the dispersed phases. electron microscopy in application to thick-film resistors.Ruthenium dioxide (RuO 2 ) and lead ruthenate pyrochlore During firing of thick films containing Ru oxide powder and lead borosilicate glass frits, apparent phase changes of Ru (Pb 2 Ru 2 O 6.5 )* particles used in thick-film resistors (TFRs) are oxides have been found to occur both ways between ruthereported 1,2 to change from one phase to the other in a lead nium dioxide and lead ruthenate pyrochlore via decomposiborosilicate glass during firing at temperatures as high as tion of one phase in glass and subsequent formation of the 850ЊC. Practical thick-film paste utilizes as a glass component other. The formation of pyrochlore occurs in a lead-rich the middle proportions of the PbO-SiO 2 -B 2 O 3 system, Fig. 1, † form, Pb 2 (Ru 2؊x Pb x )O 6.5 , whereas the formation of RuO 2 is avoiding the PbO-rich, SiO 2 -rich, and B 2 O 3 -rich corners, correcharacterized by a platelike morphology instead of initial sponding respectively to compositions of high thermal expanglobular morphology. A general tendency is observed that sion rate, high melting temperature, and glass immiscibility. RuO 2 is stable in low-PbO glass compositions and at highAccording to Bube, 1 RuO 2 , when fired in a lead borosilicate temperatures, while Pb 2 (Ru 2؊x Pb x )O 6.5 is stable in highPbO glass compositions and at low temperatures, with the implication that the stability of these phases is dictated by Table I. Chemically Analyzed Compositions of the the chemical activity of PbO in the glass melt. Binder Glasses Composition (mol%) Name PbO SiO 2 B 2 O 3

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Ruo 2 Is Stable In Low-pbo Glass Compositions and At Highmentioning

confidence: 98%

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Decomposition of Ruthenium Oxides in Lead Borosilicate Glass

Adachi

Kuno

1997

Journal of the American Ceramic Society

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“…These defects are likely caused by the interaction of lead source and the platinum film. The interaction of lead oxide and alumina was studied and published in the literature [11,12]. It was shown that lead aluminate (PbAl 12 O 19 ) formed at the interface and resulted in degradation of the properties [11].…”

Section: B Pzt Thick Films With Additivesmentioning

confidence: 98%

Direct-write of PZT thick films

Allahverdi

Safari

14th IEEE International Symposium on Applications of Ferroelectrics, 2004. ISAF-04. 2004

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Lead zirconate titanate (PZT) thick films have been prepared on alumina substrates using a Direct-Write technology. Thick films of 50 to 200 µm were deposited, dried and then sintered at 1000° to 1200°C for 30 minutes in PbO-rich atmosphere. Comparison of the thick film properties revealed that the dielectric constant and remnant polarization of the films sintered at 1100°C were maximum, likely due to a balance between densification and lead loss. The effects of three sintering aids, i.e., lead oxide, lithium bismuth oxide, and a borosilicate glass, have been investigated on the microstructure and electrical properties of the PZT thick films. It was observed that a 2 wt.% lithium bismuth oxide additive has a positive effect on the dielectric constant and remnant polarization of the PZT thick films sintered at 1100°C. The microstructures of the films revealed that 3 wt% additives would result in excessive shrinkage and formation of large pores and cracks at a sintering temperature of 1100°C and above. PZT films with 2 wt.% lithium bismuth oxide showed improved dielectric constant (~40-50%) and remanent polarization (~65%) compared to additivefree PZT thick films. It was also found that the properties are strongly thickness dependent. I. INTRODUCTIONThick films of dielectric, resistors, and conductor materials have been made using the well-established technique of screen printing. [1][2] Here in this article, we present the direct-write technique by MicroPen TM for writing thick films, specifically lead zirconate titanate (PZT) materials. MicroPen TM is a computer-controlled precise deposition technique that has been used to produce resistor and conductor patterns on alumina and other substrates [3]. This direct-write system has recently been used to make integrated multilayer ceramic components and low temperature co-fired ceramics [4,5]. We have adopted this technique for writing a series of thick film materials, including piezoelectric/electrostrictive thick films of PZT and PMN-PT. Direct-write technique allows rapid deposition of complex 2D patterns on substrates with dimensions (width and thickness) finer or comparable to those of screen printing. For small-scale production, direct-write is cheaper and faster. There are several reports on the fabrication and properties of PZT thick films by screen printing or multiple coatings by sol-gel methods in the literature [6-10]. In the following, the processing and properties of direct-write PZT thick films (with and without additives) are presented.

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Electrical and structural investigations in reliability characterisation of modern passives and passive integrated components

Dziedzic

2002

Microelectronics Reliability

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Interactions Between Thick Film Resistors And Alumina Substrate

Cited by 6 publications

References 5 publications

Decomposition of Ruthenium Oxides in Lead Borosilicate Glass

Decomposition of Ruthenium Oxides in Lead Borosilicate Glass

Direct-write of PZT thick films

Electrical and structural investigations in reliability characterisation of modern passives and passive integrated components

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