Interaction Between Phosphosilicate Glass Films and Water

Nagasima, Naoyuki; Suzuki, Hisako; Tanaka, Keizo; Nishida, Sumio

doi:10.1149/1.2401832

Cited by 38 publications

(32 citation statements)

References 1 publication

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“…͑3͒. This result correlates with experiments by Yoshimaru and Matsuhasi 5 and Nagasima et al 14 In both studies, the water surface concentrations are one order of magnitude higher than ours because their films were exposed to a saturated H 2 O vapor at 120°C. Figures 2-4 show the stress evolutions as a function of storage time for the BPSG, PSG, and USG films, respectively.…”

Section: A Water Adsorption In Cvd Oxidessupporting

confidence: 92%

Finite-element calculations of mechanical stresses induced by water adsorption/desorption in silicate glasses

Hoffmann

Leduc

Senez

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inThe adsorption-desorption transition of double-stranded DNA interacting with an oppositely charged dendrimer induced by multivalent anionsThe mechanical stresses induced by adsorption or desorption of water from various dielectric films ͑vitreous silicate glass, phosphosilicate glass, borophosphosilicate glass, and spin on glass͒ are analyzed in terms of two-dimensional finite-element simulations. For this, a new model that predicts the stress induced by the adsorption or desorption of water in the films ͑i.e., the extrinsic stress͒ has been added to a general algorithm dedicated to the calculation of stresses in silicon processes. This model was calibrated for ͑un͒doped silicate glasses and spin on glass. Thanks to this work, a mechanical study and optimization of back-end processes, including all sources of stress, are now available. It is shown that the stresses developed in densified spin on glass can be very high and are likely to degrade the reliability of devices planarized by these techniques.

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Section: A Water Adsorption In Cvd Oxidessupporting

confidence: 92%

Finite-element calculations of mechanical stresses induced by water adsorption/desorption in silicate glasses

Hoffmann

Leduc

Senez

1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The water-phosphorous exchange was unexpected, however, it has also been observed in consolidated phosphosilicate glass films used in the semiconductor industry with similar P 2 O 5 content to the KPAS glass. 8 In terms of mechanical performance, hydration strengthening is demonstrated as a viable alternative to ion-exchange strengthening. In fact, it is shown that the KPAS glass with hydration treatment B has considerably higher retained strength and damage resistance than ionexchanged soda-lime silicate.…”

Section: Discussionmentioning

confidence: 99%

“…By measuring the water diffusion rates in an 85 • C and 85% relative humidity (RH) environment for a series of ternary alkali aluminosilicate glasses (70 mol% SiO 2 , 10 mol% Al 2 O 3 , and 20 mol% R 2 O, where R = Li, Na, or K), it was demonstrated that the potassium-based glass yielded a water diffusion coefficient approximately two orders of magnitude higher than either lithium or sodiumbased glasses. 6 Since phosphorous doping of silica glass has also been shown to facilitate hydration, 8 a substitution of 10 mol% P 2 O 5 for SiO 2 was then made in the potassiumcontaining aluminosilicate glass. 6 The diffusivity of water increased another two orders of magnitude such that a 25 μm deep water-containing layer was produced in 65 days in the 85 • C and 85% RH environment.…”

Section: Introductionmentioning

confidence: 99%

Glass with hydration‐induced compressive stress profiles

Gross

Aaldenberg

et al. 2021

J Am Ceram Soc.

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A novel potassium phospho-aluminosilicate composition is described that can be strengthened by water vapor to achieve deep compressive stress (CS) profiles.Water vapor treatment at (A) 85 • C and 85% relative humidity for 40 days results in a CS of 389 ± 20 MPa and a compressive depth of layer (DOL) of 18 ± 2 μm. When treated at (B) 160 • C and 0.1 MPa for 7 days, a CS of 245 ± 20 MPa and a DOL of 40 ± 2 μm is achieved. Glasses with hydration-induced stress profiles can provide high retained strength following flaw introduction compared with ionexchanged soda-lime silicate glass. Sample treatment B also has an exemplary Vickers indentation cracking threshold value greater than 20 kgf. The hydration profile determined by secondary ion mass spectrometry (SIMS) is shown to closely match the stress profile for these samples. SIMS analysis also shows that the depth of water enrichment correlates well with the depletion depth of phosphorus. The high tendency towards water-induced strengthening for this new type of glass even enables self-strengthening by the generation of a near-surface CS profile following exposure to ambient conditions.

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“…We have also modeled mechanical solicitations corresponding to the absorption/evaporation of molecules or chemical compounds. In PSG or BPSG, water is absorbed; 28,29 in silicate and siloxane SOG oxides, solvents evaporate during film curing; 30,31 in hydrogen silsesquioxane ͑HSQ͒ SOG silicon dioxide and low-pressure chemical vapor deposition ͑LPCVD͒ silicon nitride, hydrogen evaporates during annealing; [32][33][34] and in LPCVD-TEOS and high density plasma ͑HDP͒ silicon dioxides, OH radicals evaporate. 35,36 Assuming that the diffusivity of the molecules is uniform in the material ͓DϭD 0 exp(ϪE D0 /KT)͔, a Laplace equation is solved to calculate the distribution of the absorbed/evaporated compound.…”

Section: Mechanical Modelsmentioning

confidence: 99%

Mechanical analysis of interconnected structures using process simulation

Senez

Hoffmann

Duc

et al. 2003

Journal of Applied Physics

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An elastoplastic model has been implemented in a technology computer-aided design (TCAD) program with the aim of predicting the mechanical behavior of polycrystalline materials used in silicon-based technology in microelectronics. In order to analyze microstructures combining both nonlinear viscoelastic and elastoplastic materials, we propose a computational process with quick convergence. This model is now included in a stress simulation system, thus allowing the prediction of variations in stress according to the stage of the process. The modeling takes into account not only thermal stress but also intrinsic/extrinsic stresses and etching-related stress. The stress evolution of aluminum copper (Al–Cu) periodic lines embedded within silicon dioxide has been examined. The tensile and compressive yield strengths of thin-film Al–Cu have been characterized using the von Mises criterion for various film thicknesses. Comparisons with experimental results, based on passivated and unpassivated line structures, show that von Mises yield stress is independent of linewidth. It was also found that the correct prediction of the principal stresses strongly depends on the accurate characterization of thin-film yield strength. The use of incorrect values can lead to large errors in the determination of the line aspect ratio giving the maximum principal stresses. Finally, the analysis of an industrial back end of line process is performed to demonstrate what we can now carry out with TCAD to solve stress-related reliability problems in interconnects.

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Interaction Between Phosphosilicate Glass Films and Water

Cited by 38 publications

References 1 publication

Finite-element calculations of mechanical stresses induced by water adsorption/desorption in silicate glasses

Finite-element calculations of mechanical stresses induced by water adsorption/desorption in silicate glasses

Glass with hydration‐induced compressive stress profiles

Mechanical analysis of interconnected structures using process simulation

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