Intelligent SOI CMOS integrated circuits and sensors for heterogeneous environments and applications

Flandre, Denis; Adriaensen, Stéphane; Afzalian, Aryan; Laconte, J.; Levacq, David; Renaux, Christian; Vancaillie, Laurent; Raskin, Jean‐Pierre; Demeûs, Laurent; Delatte, Pierre; Dessard, Vincent; Picun, Gonzalo

doi:10.1109/icsens.2002.1037327

Cited by 13 publications

(8 citation statements)

References 11 publications

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“…Electronics circuitry, such as an operational amplifier, must also be added close to the sensor to monitor the resistivity shift. SOI technology is uniquely suited for micropower as well as high temperature and radiation circuit performances [3]. SOI substrates also offer a lot of advantages toward the joint fabrication of the membrane with the close electronics.…”

Section: Motivationmentioning

confidence: 99%

“…While insuring compatibility with a micronic fully depleted (FD) SOI-CMOS process of interest for micropower or high-temperature applications [3], the 400-nm-thick buried thermal oxide of the SOI substrate can advantageously constitute the first part of the membrane. A second part of the membrane stack will be constituted by the densified PECVD oxide layer related to the interconnect dielectric between the polysilicon and aluminum layers of the CMOS process.…”

Section: A Membranementioning

confidence: 99%

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SOI CMOS Compatible Low-Power Microheater Optimization for the Fabrication of Smart Gas Sensors

et al. 2004

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In this paper, an original design of a polysilicon loop-shaped microheater on a 1-m thin-stacked dielectric membrane is presented. This design ensures high thermal uniformity and insulation and very low power consumption (20 mW for heating at 400 C). Moreover, the use of completely CMOS compatible tetramethyl ammonium hydroxide-based bulk-micromachining techniques allows an easy, smart gas sensor integration in SOI-CMOS technology.

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Section: Motivationmentioning

confidence: 99%

Section: A Membranementioning

confidence: 99%

SOI CMOS Compatible Low-Power Microheater Optimization for the Fabrication of Smart Gas Sensors

et al. 2004

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“…The relative magnetic sensitivity achieved with planar FD SOI MagFETs is typically shown in the range of S r ∼ 10-15% T −1 [7], [8]. Performance of these devices is fundamentally limited by poor mobility of electrons in the inversion layer [9].…”

Section: Introductionmentioning

confidence: 99%

High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology

Janković

Kryvchenkova

Batcup

et al. 2017

IEEE Electron Device Lett.

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This letter presents a novel device concept of split-current magnetic sensor that is fully compatible with silicon-on-insulator(SOI) FinFET technology. The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, and its measured currentrelated relative sensitivity is as high as 3400% T −1 at 2 µA of total supply current. The device's very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3-D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smart-power integrated circuits.

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“…(3) Recently, a fully depleted (FD) thin-film silicon-on-isolator (SOI) technology has emerged as a major contender for future integrated microsensors and microsystems with the unique advantages that SOI offers in some application niches, such as high-temperature and RF and/or micropower operation. (4,5) Thus, the design of MAGFETs in FD SOI technology has copied the layout of long-gate split-drain MAGFETs originally designed for bulk CMOS technology. (6)(7)(8) It is observed that MAGFETs in FD SOI technology have low magnetic sensitivities similar to their bulk CMOS counterparts falling in the range of (0.05-1.5) T -1 .…”

Section: Introductionmentioning

confidence: 99%

Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology

2009

Sensors and Materials

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In this paper, the design and operation of a double-gate split-drain/source magnetic fi eld-effect transistor (DG SDS MAGFET) compatible with fully depleted (FD) thinfi lm silicon-on-isolator (SOI) technology are described. Owing to bulk conduction and carrier-domain-based operation of a DG SDS MAGFET, a magnetic sensitivity of 58 T -1 in the mT range of magnetic fi elds is predicted from a three-dimensional sensor numerical simulation. This is almost two orders of magnitude higher than the magnetic sensitivity achieved with conventionally designed MAGFETs in FD SOI technology. In addition, the simulation results revealed that the DG SDS MAGFET can also operate as a bidirectional cross-switch controlled by a pulsed magnetic fi eld with an amplitude above 30 mT.

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Intelligent SOI CMOS integrated circuits and sensors for heterogeneous environments and applications

Cited by 13 publications

References 11 publications

SOI CMOS Compatible Low-Power Microheater Optimization for the Fabrication of Smart Gas Sensors

SOI CMOS Compatible Low-Power Microheater Optimization for the Fabrication of Smart Gas Sensors

High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology

Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology

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