Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology
Abstract:In this paper, the design and operation of a double-gate split-drain/source magnetic fi eld-effect transistor (DG SDS MAGFET) compatible with fully depleted (FD) thinfi lm silicon-on-isolator (SOI) technology are described. Owing to bulk conduction and carrier-domain-based operation of a DG SDS MAGFET, a magnetic sensitivity of 58 T -1 in the mT range of magnetic fi elds is predicted from a three-dimensional sensor numerical simulation. This is almost two orders of magnitude higher than the magnetic sensitivit… Show more
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