Integration of thin n-type nc-Si:H layers in the window-multilayer stack of heterojunction solar cells

Antognini, Luca; Sthioul, Corentin; Dréon, Julie; Paratte, Vincent; Türkay, Deniz; Senaud, Laurie‐Lou; Ballif, Christophe; Boccard, Mathieu

doi:10.1016/j.solmat.2022.111975

Cited by 7 publications

(4 citation statements)

References 31 publications

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“…where KT/q is thermal voltage = 0.025 eV, J sc = short circuit current density and J 0 = total saturation current density. An enhancement in the EQE also confirms the c-Si passivation quality for the nanocrystalline sample [21], which can be correlated to an increase in the diffusion length of the minority carriers and better collection from the rear side (J sc enhancement) compared to the n-a-Si:H layer. The c-Si surface passivation enhancement can be attributed to the chemical passivation with additional hydrogen (during nc-Si deposition) and field-effect passivation due to efficient doping in the nc-Si:H phase.…”

Section: Layerssupporting

confidence: 53%

“…The transition from the amorphous to the nanocrystalline phase depends on phosphorous doping concentration, along with the H 2 /SiH 4 ratio [20]. The phosphorous-doping fraction increases to 4%, which may cause a thicker nucleation zone (initial layer) and delayed crystal growth due to disruption in the periodicity of crystal lattice retarding the nc-Si: H layer growth [21].…”

Section: Resultsmentioning

confidence: 99%

“…An enhancement of ∼3.4% FF with the nanocrystalline layer is attributed to the higher conductivity from the nc-Si:H phase compared to the a-Si:H phase. The formation of percolation channels by nanocrystals enhances the charge carrier mobility, reduces the barrier height, and improves the electronic transport of the charge carriers [11,21]. The n-nc-Si:H layer shows a lesser difference in the ΔFF (pFF-FF) to 5%, while the n-a-Si:H layer exhibits ΔFF ∼7%, where pFF is the resistance-free pseudo-fill factor.…”

Section: Layersmentioning

confidence: 99%

See 2 more Smart Citations

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Bhattacharya,

Pandey,

Alam

et al. 2024

Nanotechnology

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We have investigated the PECVD growth of the phosphorus-doped hydrogenated nanocrystalline silicon (n-nc-Si:H) film as an electron-selective layer in silicon heterojunction (SHJ) solar cells. The effect of power densities on the precursor gas dissociation are investigated using optical emission spectra and the crystalline fraction in n-nc-Si:H films are correlated with the dark conductivity. With the Pd of 122 mW/cm2 and ~2% phosphorus doping, we observed Raman crystallinity of 53%, high dark conductivity of 43 S/cm, and activation energy of ~23 meV from the ~30 nm n-nc-Si:H film. The n-nc-Si:H layer improves the textured c-Si surface passivation by two-fold to ~2 ms compared to the phosphorus-doped hydrogenated amorphous silicon (n-a-Si:H) layers. An enhancement in the open-circuit voltage and external quantum efficiency (from >650 nm) due to the better passivation at the rear side of the cell after integrating the n-nc-Si:H layer compared to its n-a-Si:H counterpart. An improvement in the charge carrier transport is also observed with an increase in fill factor from ~71 % to ~75 %, mainly due to a reduction in electron-selective contact resistivity from ~271 mΩ-cm2 to ~61 mΩ-cm2. Finally, with the relatively better c-Si surface passivation and carrier selectivity, a power conversion efficiency of ~19.90% and pseudo-efficiency of ~21.90% have been realized from the SHJ cells.

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Section: Layerssupporting

confidence: 53%

Section: Resultsmentioning

confidence: 99%

Section: Layersmentioning

confidence: 99%

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Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Bhattacharya,

Pandey,

Alam

et al. 2024

Nanotechnology

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“…Strategies to achieve this have been developed leading to excellent cell performance on both sides contacted [3,4] and interdigitated back-contacted SHJ devices [5,6]. Here we report on developments of nc-Si layers, the impact of deposition temperature (Tdep) and the necessity for an ultra-thin oxide layer (SiOx) at the interface between a-Si(i) and the doped nc-Si layer for application of nc-Si in full-area M2 SHJ devices.…”

Section: Introductionmentioning

confidence: 99%

Nanocrystalline Silicon Layers for the Application in Silicon Heterojunction Solar Cells

Steinmetz,

Seif,

Koc

et al. 2024

SiliconPV Conf Proc

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After application in thin-film silicon tandem solar cells and in lab-scale silicon heterojunction (SHJ) devices, doped nanocrystalline silicon (nc) layers now arrived on the industrial stage. Despite their challenging deposition, the benefits they hold with respect to even higher device performance compared to their amorphous counterparts are significant and justify additional effort. In this contribution we report on developments towards industrially applicable processes for n- and p-doped silicon layers, nc-Si(n) and nc-Si(p), and their implementation in SHJ cells. Our investigation focuses on the impact of deposition temperature (Tdep) and the need for a thin oxide layer to promote fast nucleation of thin, sufficiently crystalline, doped nc-Si films in a single deposition chamber powered at 13.56 MHz. We identified main challenges for thin film and contact engineering and reached efficiencies of 23.0% with n- and 23.1% with p-type nc-Si approaching cell performances of our process of record based on amorphous Si (a-Si) layers.

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Strategies for realizing high-efficiency silicon heterojunction solar cells

Zhao

Procel

Han

et al. 2023

Solar Energy Materials and Solar Cells

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Integration of thin n-type nc-Si:H layers in the window-multilayer stack of heterojunction solar cells

Cited by 7 publications

References 31 publications

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Nanocrystalline Silicon Layers for the Application in Silicon Heterojunction Solar Cells

Strategies for realizing high-efficiency silicon heterojunction solar cells

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