Integration of Spin-RAM technology in FPGA circuits

Zhao, Wei; Belhaire, E.; Mistral, Q.; Nicolle, E.; Devolder, T.; Chappert, C.

doi:10.1109/icsict.2006.306511

Cited by 29 publications

(19 citation statements)

References 5 publications

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“…3 shows a simple structure of a SRAM-based FPGA. It includes two radiation susceptive and reliability essential configurable memory units [4,12,16]. Fig3.a shows these two types of memories including logic blocks and interconnection switches.…”

Section: A Preliminaries On Magnetic-based Combinational and Sequentmentioning

confidence: 99%

Radiation-Hardened Design of Nonvolatile MRAM-Based FPGA

Rajaei

2016

IEEE Trans. Magn.

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Field-programmable gate arrays (FPGA) based on static random access memory (SRAM) are more common than other types, including flash and anti-fuse because of their infinite configurability and high performance. However, following the scaling down of CMOS technology, standby power of the CMOS circuits are becoming crucial. Logic circuits based on magnetic RAM (MRAM) can be attractive replacement for the SRAM-based logics thanks to their zero leakage and CMOS compatibilities. Furthermore, in FPGA design, using MRAM logic instead of SRAM logic results in some more advantages including non-volatility and high radiation reliability. In this paper, effects of radiation induced soft errors on MRAM-based FPGAs (MFPGA) is taken into account. Soft error tolerance of the previous MFPGAs are discussed and a new MFPGA structure is proposed. It is shown that, the proposed non-volatile, low power and high speed MFPGA is highly robust against radiation induced soft errors. It also is shown that, the proposed MFPGA offering a high radiation robustness does not incur a considerable design overhead comparing with the other similar MFPGAs.

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Section: A Preliminaries On Magnetic-based Combinational and Sequentmentioning

confidence: 99%

Radiation-Hardened Design of Nonvolatile MRAM-Based FPGA

Rajaei

2016

IEEE Trans. Magn.

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“…In [10], authors have addressed the use of STT-MRAM in FPGAs circuits. Indeed, a writing circuit for an STT-MRAM and an STT-based nonvolatile register has been proposed in [10] and they have been both assessed competitive in terms of speed, power consumption, nonvolatility, and area in comparison with their counterparts implemented with more classical memories.…”

Section: Introductionmentioning

confidence: 99%

“…Indeed, a writing circuit for an STT-MRAM and an STT-based nonvolatile register has been proposed in [10] and they have been both assessed competitive in terms of speed, power consumption, nonvolatility, and area in comparison with their counterparts implemented with more classical memories. The same logic circuits using the TAS writing scheme have been proposed more recently by [11].…”

Section: Introductionmentioning

confidence: 99%

On the Use of Magnetic RAMs in Field-Programmable Gate Arrays

Guillemenet

Torres

Sassatelli

et al. 2008

International Journal of Reconfigurable Computing

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Recommended by Michael HubnerThis paper describes the integration of field-induced magnetic switching (FIMS) and thermally assisted switching (TAS) magnetic random access memories in FPGA design. The nonvolatility of the latter is achieved through the use of magnetic tunneling junctions (MTJs) in the MRAM cell. A thermally assisted switching scheme helps to reduce power consumption during write operation in comparison to the writing scheme in the FIMS-MTJ device. Moreover, the nonvolatility of such a design based on either an FIMS or a TAS writing scheme should reduce both power consumption and configuration time required at each power up of the circuit in comparison to classical SRAM-based FPGAs. A real-time reconfigurable (RTR) micro-FPGA using FIMS-MRAM or TAS-MRAM allows dynamic reconfiguration mechanisms, while featuring simple design architecture.

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“…MRAM have so far been exclusively employed as elements on fine-grained FPGA look alike solutions, such as Look Up Tables (LUT) [3], [4], [9], [10], [11], [12] and no works have been published on MRAM-based coarse-grained reconfigurable arrays.…”

Section: State Of the Artmentioning

confidence: 99%

“…The strength and nature of the required magnetic field depends on the writing approach. Currently, there are 3 writing approaches known as Field Induced Magnetic Switching (FIMS) [3], [4], [9], Thermally Assisted Switching (TAS) [10], [11] and Spin Transfer Torque (STT) [12].…”

Section: State Of the Artmentioning

confidence: 99%

Reconfigurable Circuits Using Magnetic Tunneling Junction Memories

Silva

Fernandes

Neto

2010

IFIP Advances in Information and Communication Technology

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Abstract. This paper presents the first results of our work to research and develop new reconfigurable circuits and topologies based on Magnetic RAM (MRAM) memory elements. This work proposes a coarse-grained reconfigurable array using MRAM. A coarse-grained array, where each reconfigurable element computes on 4-bit or larger input words, is more suitable to execute data-oriented algorithms and is more able to exploit large amounts of operationlevel parallelism than common fine-grained architectures. The architecture is organized as a one-dimensional array of programmable ALU and the configuration bits are stored in MRAM. MRAM provide non-volatility with cell areas and with access speeds comparable to those of SRAM and with lower process complexity than FLASH memory. MRAM can also be efficiently organized as multi-context memories.

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Integration of Spin-RAM technology in FPGA circuits

Cited by 29 publications

References 5 publications

Radiation-Hardened Design of Nonvolatile MRAM-Based FPGA

Radiation-Hardened Design of Nonvolatile MRAM-Based FPGA

On the Use of Magnetic RAMs in Field-Programmable Gate Arrays

Reconfigurable Circuits Using Magnetic Tunneling Junction Memories

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