Integration of organic low-k material with Cu-damascene employing novel process

Transient analysis of the impact stage of wirebonding on Cu/low-K wafers

“…3, was examined. The USG stands for the undoped silicon glass, which is used as a hard mask and a chemical mechanical polishing stopper in the Cu/low-K fabrication process [7]. The copper via is a complex three-dimensional structure that comprises of horizontal and vertical interconnects.…”

Integration of High Performance CMOS Logic LSI by Applying Cu Wiring to SiLK<SUP>T.M.</SUP>/SiO<SUB>2</SUB> Hybrid Structure

“…at the trench level acted as a CMP stopper during the CMP process. 6,7) The last structure we tested was a conventional SiO 2 structure without a SiN stopper at the bottom of the trench (Fig. 1(c)), and in which SiO 2 was used as the dielectrics in the trench and via levels.…”

“…interconnect reliability, we measured the length-dependent electromigration (LDEM) of this structure for lengths from 2 to 200 µm and compared these values to those for a copper/SiO 2 ILD struc- ture. The LDEM stress current density was on the order of 1×10 6 A/cm 2 and the temperature ranged from 250 to 300…”

“…3,5) For these reasons, many research groups sought ways to combine low-k dielectrics with copper wiring. [6][7][8][9][10][11][12] However, SiO 2 film, which has been conventionally used as a dielectric material in ULSIs, is generally superior to low-k materials with regard to mechanical strength, chemical stability, and thermal stability. Therefore, many problems have to be overcome if we are to combine low-k materials and copper interconnection technology in the manufacture of semiconductor devices.…”

Low Dielectric Constant Materials

“…Low k Materials BCB (divinylsiloxane bisbenzocyclobutene) is a unique thermosetting material based on benzocyclobutene chemistry 2] and a well-known low k and low dissipation factor material in the fabrication of multi-chip modules [3, 4, 5] and interconnection of GaJAs integrated circuits [6]. The chemical structure of BCB is shown in Fig.…”