Integration of H2 barriers for ferroelectric memories based on SrBi2Ta2O9 (SBT)

Hartner, W.; Schindler, G.; Bosk, P.; Gabric, Z.; Kastner, Markus; Beitel, G.; Mikolajick, Thomas; Dehm, C.; Mazuré, C.

doi:10.1080/10584580008215660

Cited by 11 publications

(6 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This, however, is known to be decremental to perovskite and layered perovskite ferroelectrics. [ 12 ]…”

Section: Introductionmentioning

confidence: 99%

“…to be decremental to perovskite and layered perovskite ferroelectrics. [12] To retrace chemical modifications that are directly related to these different RTA crystallization processes, we present an investigation of the local chemistry of top electrode in IrO 2 /HZO/IrO 2 MIM structures. We investigate the chemical state of the top IrO 2 electrode dependent on the RTA atmosphere, i.e., anneals in NA, OA, and FGA atmosphere, as schematically shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Chemical Stability of IrO₂ Top Electrodes in Ferroelectric Hf_0.5Zr_0.5O₂‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Szyjka

Baumgarten

Mittmann

et al. 2021

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

The IrO2 top electrode chemistry of ferroelectric IrO2/Hf0.5Zr0.5O2 (HZO)/IrO2 metal–insulator–metal (MIM) structures dependent on rapid thermal annealing in different gas atmospheres (nitrogen, oxygen, and forming gas [FG]) is investigated. Using hard X‐ray photoelectron spectroscopy (HAXPES), the strongly modified chemical states of the IrO2 layer dependent on the choice of annealing gas atmosphere are observed. For O2 and N2 anneals, the IrO2 electrode remains either unaffected or is just slightly chemically attacked at the top. In contrast, FG annealing causes a complete reduction of the IrO2 top electrode into metallic Ir. Surprisingly, oxygen is detected—unbound to Ir—which is incorporated in the metallic Ir layer. This mobile oxygen is thought to affect the electrical behavior of the IrO2/HZO/IrO2 device. In addition, it may serve as a test sample for future studies of the root causes of the role of oxygen‐vacancy interactions at the interface, which can influence the performance instabilities in HZO‐based MIM structures, such as wake‐up, imprint, and fatigue.

show abstract

“…This, however, is known to be decremental to perovskite and layered perovskite ferroelectrics. [ 12 ]…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chemical Stability of IrO₂ Top Electrodes in Ferroelectric Hf_0.5Zr_0.5O₂‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Szyjka

Baumgarten

Mittmann

et al. 2021

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

show abstract

“…Due to the large number of defects, leakage current, and large lattice mismatch between perovskite ferroelectrics and silicon, it is always necessary to use a buffer layer with a proper interface Table 1 The ferroelectric properties of PZT [29][30][31][32], SBT [33][34][35][36][37][38][39], and Si:HfO 2 [28]. with the substrate.…”

Section: Buffer Layermentioning

confidence: 99%

“…The properties of two wellknown perovskite ferroelectrics, Lead Zirconate Titanate (PZT) and Strontium Barium Titanate (SBT), is compared with Si:HfO 2 in Table 1. The recently discovered ferroelectric thin film, Si:HfO 2 [28,6], has a relatively high coercive field that ensures a large memory window [29][30][31][32][33][34][35][36][37][38][39].…”

Section: Ferroelectric Materialsmentioning

confidence: 99%

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Saeidi

Biswas

Ionescu

2016

Solid-State Electronics

View full text Add to dashboard Cite

a b s t r a c tThe implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO 2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as ultra-low power nonvolatile memory even in aggressively scaled dimensions. A Fe-TFET analytical model is derived by combining the pseudo 2-D Poisson equation and Maxwell's equation. The model describes the Fe-TFET behavior when a time-dependent voltage is applied to the device with hysteretic output characteristic due to the ferroelectric's dipole switching. The theoretical results provide unique insights into how device geometry and ferroelectric properties affect the Fe-TFET transfer characteristic. The recently explored ferroelectric, silicon-doped HfO 2 is employed as the gate ferroelectric. With the ability to engineer ferroelectricity in HfO 2 thin films, a high-K dielectric well established in memory devices, the silicon-doped HfO 2 opens a new route for improved manufacturability and scalability of future 1-T ferroelectric memories. In the current research, a Si:HfO 2 based Fe-TFET with large memory window and low power dissipation is designed and simulated. Utilizing our presented model, the device characteristics of a Fe-TFET that takes full benefits from Si:HfO 2 is compared with the same devices using well-known perovskite ferroelectrics. Finally, the Fe-TFET is compared with a conventional ferroelectric memory transistor highlighting the advantages of using tunneling memory devices.

show abstract

“…Hydrogen barrier and BEOL.-It is well known that exposure to hydrogen at elevated temperatures can cause severe damage to a ferroelectric capacitor. 49 Hydrogen is present in many BEOL processes like oxide, nitride, or tungsten deposition. Additionally a hydrogen-containing forming gas anneal is usually required to anneal interface traps at the Si/SiO 2 interface of MOS transistors.…”

Section: Ferroelectric Memory Integrationmentioning

confidence: 99%

Material Aspects in Emerging Nonvolatile Memories

Pinnow

Mikolajick

2004

J. Electrochem. Soc.

Self Cite

View full text Add to dashboard Cite

In this paper, the ongoing research and development activities on future nonvolatile memory technologies incorporating new switching materials are described. Memory concepts based on switching effects in inorganic and organic materials as well as in single molecules and carbon nanotubes are reviewed. Examples of the typical aspects that must be covered during the development of a memory incorporating a new switching material are illustrated using the results from the development of a ferroelectric memory.

show abstract

Integration of H₂ barriers for ferroelectric memories based on SrBi₂Ta₂O₉ (SBT)

Cited by 11 publications

References 13 publications

Chemical Stability of IrO₂ Top Electrodes in Ferroelectric Hf_0.5Zr_0.5O₂‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Chemical Stability of IrO₂ Top Electrodes in Ferroelectric Hf_0.5Zr_0.5O₂‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Material Aspects in Emerging Nonvolatile Memories

Contact Info

Product

Resources

About

Integration of H2 barriers for ferroelectric memories based on SrBi2Ta2O9 (SBT)

Cited by 11 publications

References 13 publications

Chemical Stability of IrO2 Top Electrodes in Ferroelectric Hf0.5Zr0.5O2‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Chemical Stability of IrO2 Top Electrodes in Ferroelectric Hf0.5Zr0.5O2‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Material Aspects in Emerging Nonvolatile Memories

Contact Info

Product

Resources

About

Integration of H₂ barriers for ferroelectric memories based on SrBi₂Ta₂O₉ (SBT)

Chemical Stability of IrO₂ Top Electrodes in Ferroelectric Hf_0.5Zr_0.5O₂‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas

Chemical Stability of IrO₂ Top Electrodes in Ferroelectric Hf_0.5Zr_0.5O₂‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas