The paper reports on three major aspects of CVD reactor simulation: 1) Modeling of transport phenomena in conventional CVD and their effect on the film growth; 2) Modeling of plasma enhanced CVD and deposition of thin films; 3) Modeling of f'im growth and analysis of stability and morphology case studies. Case studies involve deposition of boron on W wire, deposition of Si-H and morphology development for a typical CVD reaction. Numerical methods of simulation are discussed in detail for each category mentioned above.Jacobian is evaluated and an incomplete inversion is performed. Modified Newton steps can be executed in 190 CPU seconds.
Case Study Boron Deposition on Tungsten CoreDeposition of B on W wire was simulated numerically. The solution fields obtained for the operating conditions shown in Table 1 are presented below.