Morphology and Film Growth in CVD Reactions

Hlaváček, Vladimír; Thiart, Jacob J.; Orlicki, Dariusz

doi:10.1051/jphyscol:1995501

Cited by 4 publications

(3 citation statements)

References 22 publications

(30 reference statements)

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“…Remark 1 For the flow through the gas chamber, for which we assume a homogeneous medium and non-reactive plasma, we have considered a constant flow (Hlavacek and Orlicki 1995). A further simplification is given by the very small porous substrate, for which we can assume the underlying velocity in a first approximation as constant (Ohring 2002).…”

Section: Mathematical Modelmentioning

confidence: 99%

Simulation of Chemical Vapor Deposition: Four-Phase Model

Geiser¹,

Arab

2012

Special Topics Rev Porous Media

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We are motivated to model chemical vapor deposition for metallic bipolar plates and optimization to deposit a homogeneous layer. Moreover a constraint to the deposition process is a very low pressure (nearly vacuum) and a low temperature (about 400 K). These constraints need to have a catalyst process, here in our apparatus we deal with a plasma source and precursor gases, see (Dobkin and Zuraw 2003). Such a plasma have the advantage to accelerate the vaporation process, see (Lieberman and Lichtenberg 2005), and to bring the solid materials to a gaseous phase. Nevertheless there are also some drawbacks, so that a retardation and adsorption process can hinder the direct transport to the target, see (Lieberman and Lichtenberg 2005). Here, we present a mesoscopic model, which reflects the retardation, transport and reaction of the gaseous species through a homogeneous media in the chamber. The models include immobile gaseous phases, where the transport of the mobile gaseous species are hindered. Kinetically controlled adsorption are included to taken into account the multiple species of heavier and lighter species. Such ideas are also considered in fluid dynamical models, see (Farooq and Ruthven 1991). Further, the models include the conservation of mass and the porous media,

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Section: Mathematical Modelmentioning

confidence: 99%

Simulation of Chemical Vapor Deposition: Four-Phase Model

Geiser¹,

Arab

2012

Special Topics Rev Porous Media

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“…We use ascending parameters for the retardation factors. The retardation factors are given by R 1 16,…”

Section: Verification Of the Code With Analytical Solutionsmentioning

confidence: 99%

Modeling and Simulation of a Chemical Vapor Deposition

Geiser

Arab²

2011

Journal of Applied Mathematics

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We are motivated to model PE-CVD (plasma enhanced chemical vapor deposition) processes for metallic bipolar plates, and their optimization for depositing a heterogeneous layer on the metallic plate. Moreover a constraint to the deposition process is a very low pressure (nearly a vacuum) and a low temperature (about 400 K). The contribution of this paper is to derive a multiphysics system of multiple physics problems that includes some assumptions to simplify the complicate process and allows of deriving a computable mathematical model without neglecting the real-life processes. To model the gaseous transport in the apparatus we employ mobile gas phase streams, immobile and mobile phases in a chamber that is filled with porous medium (plasma layers). Numerical methods are discussed to solve such multi-scale and multi phase models and to obtain qualitative results for the delicate multiphysical processes in the chamber. We discuss a splitting analysis to couple such multiphysical problems. The verification of such a complicated model is done with real-life experiments for single species. Such numerical simulations help to economize on expensive physical experiments and obtain control mechanisms for the delicate deposition process.

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“…The algorithm of the computation of the numerical convergence tableau 1. We compute reference solutions: a numerically: fine time and spatial steps or b analytically if there exists an analytical solution .…”

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confidence: 99%

Adaptive Step-Size Control in Simulation of Diffusive CVD Processes

Geiser

Fleck²

2009

Mathematical Problems in Engineering

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We present control strategies of a diffusion process for chemical vapor deposition for metallic bipolar plates. In the models, we discuss the application of different models to simulate the plasma-transport of chemical reactants in the gas-chamber. The contribution are an optimal control problem based on a PID control to obtain a homogeneous layering. We have taken into account one- and two-dimensional problems that are given with constraints and control functions. A finite-element formulation with adaptive feedback control for time-step selection has been developed for the diffusion process. The optimization is presented with efficient algorithms. Numerical experiments are discussed with respect to the diffusion processes of the macroscopic model.

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Morphology and Film Growth in CVD Reactions

Cited by 4 publications

References 22 publications

Simulation of Chemical Vapor Deposition: Four-Phase Model

Simulation of Chemical Vapor Deposition: Four-Phase Model

Modeling and Simulation of a Chemical Vapor Deposition

Adaptive Step-Size Control in Simulation of Diffusive CVD Processes

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