Simulation of Chemical Vapor Deposition: Four-Phase Model

Abstract

We are motivated to model chemical vapor deposition for metallic bipolar plates and optimization to deposit a homogeneous layer. Moreover a constraint to the deposition process is a very low pressure (nearly vacuum) and a low temperature (about 400 K). These constraints need to have a catalyst process, here in our apparatus we deal with a plasma source and precursor gases, see (Dobkin and Zuraw 2003). Such a plasma have the advantage to accelerate the vaporation process, see (Lieberman and Lichtenberg 2005), and to bring the solid materials to a gaseous phase. Nevertheless there are also some drawbacks, so that a retardation and adsorption process can hinder the direct transport to the target, see (Lieberman and Lichtenberg 2005). Here, we present a mesoscopic model, which reflects the retardation, transport and reaction of the gaseous species through a homogeneous media in the chamber. The models include immobile gaseous phases, where the transport of the mobile gaseous species are hindered. Kinetically controlled adsorption are included to taken into account the multiple species of heavier and lighter species. Such ideas are also considered in fluid dynamical models, see (Farooq and Ruthven 1991). Further, the models include the conservation of mass and the porous media,

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

“…Geiser and Arab develop a four-phase model for CVD processes, incorporating phase changes and transport phenomena to optimize the deposition of metallic bipolar plates [126].…”

“…Deposition: Four-Phase Model [126] Incorporating four phases, the model provides detailed and realistic CVD process simulations for accurate predictions and optimizations.…”