Integration of cellular front end modules on advanced high resistivity SOI RF CMOS technology

Gianesello, Frédéric; Durand, C.; Pilard, Romain; Petit, D.; Penard, J.; Jan, S.; Gloria, D.; Rauber, B.; Raynaud, C.

doi:10.1109/pawr.2011.5725381

Cited by 4 publications

(3 citation statements)

References 10 publications

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“…It has low RF noise, good linearity, and high breakdown voltage; better thermal conductivity than SOS and GaAs; and high programmability as bulk Si, making it the most suitable for SOC. Owing to its advantages for RF and SOC, HR‐SOI has attracted interest from several researchers . Due to its structure, which includes a buried‐oxide and high‐resistive substrate, it provides the best noise isolation, best coupling prevention between the devices, and signal integrity among all substrates .…”

Section: Recent Progress In Substrate Technologiesmentioning

confidence: 99%

Advanced technologies for next‐generation RF front‐end modules

Sahu

Aaen

Devabhaktuni

2019

Int J RF Microw Comput Aided Eng

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The complexity of RF front-end (RFFE) modules of wireless devices has increased dramatically over the past decade. In order to meet the demands for future mobile communications, RFFEs will need to enable multiband for global roaming, and multi-mode to support multiple cellular modes, incorporate beamforming antennas, and operate at mm-wave frequencies. To this end, this article presents a summary of the recent progress in RF substrate technologies, waveguide architectures and multi-band design techniques for 5G RFFE modules, and summarizes the present and future challenges in RFFE module design.

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Section: Recent Progress In Substrate Technologiesmentioning

confidence: 99%

Advanced technologies for next‐generation RF front‐end modules

Sahu

Aaen

Devabhaktuni

2019

Int J RF Microw Comput Aided Eng

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“…Furthermore, the increasing significance of IPD technology stems from its favorable Q value and performance at operating frequency. The inductor Q value achieved with current IPD technology is about 25 at 1 GHz [4][5][6][7]. IPD technology is extending its applications across various fields, including mobile communication components, devices for 5G or mmW applications, precision circuit boards (interposers), and flexible/wearable application parts.…”

Section: Introductionmentioning

confidence: 99%

Enhancing the quality factor of aerosol jet printed RF spiral inductors through gold electroplating

Mosa,

Kang,

et al. 2024

Flex. Print. Electron.

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Aerosol jet printing outperforms inkjet printing by significantly reducing printed line width, effectively addressing issues such as bulging and surface irregularities. This technology allows for line widths as narrow as 10 to 100 µm with high aspect ratios, making it well-suited for RF (radio frequency) applications. Consequently, it emerges as a valuable tool for direct printing in RF applications. Among conductive inks, silver nanoparticle (Ag NP) ink is preferred for its straightforward direct printing process and lower sintering temperature requirements. However, the conductivity of printed Ag NP traces falls markedly below that of bulk silver due to significant porosity, limiting its use in RF applications where a high-quality factor is essential. The quality factor of an inductor, indicative of its efficiency in energy storage and release, inversely correlates with its resistance. Our research combines aerosol jet printing with selective electroplating to reduce the resistance of printed traces, thereby enhancing the inductor's quality factor for RF applications. We fabricated spiral inductors on alumina substrates using silver NP ink and subsequently applied selective gold electroplating to these traces. This approach led to a significant increase in the inductors' quality factor, improving it by a factor of 3 to 5 in the RF frequency range of 100 to 700 MHz.

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“…The use of high-resistivity (several thousand ohm-cm) silicon as a handle wafer is a typical feature of RF-SOI, allowing the RF-SOI to be immune to high power loss and poor electrical isolation while achieving excellent RF performance. [5][6][7][8] Thus, high-resistivity silicon is essential for fabricating RF-SOI devices.…”

mentioning

confidence: 99%

Development of the conductivity type inversion caused by thermal double donors’ formation in p-type high-resistivity silicon

Liu²,

Wei³

et al. 2023

Appl. Phys. Express

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The formation of thermal double donors (TDDs) during the iso-thermal annealing at 450 ℃ in low-oxygen and high-resistivity silicon was quantitatively investigated, and the oxygen related power parameter x for low-oxygen and high-resistivity silicon was obtained. Excessive TDDs formed in the p-type high-resistivity silicon during the devices manufacturing process will invert the conductivity to n-type. A quantitative relationship between the critical wafer start resistivity and oxygen concentration in p-type high-resistivity silicon was obtained, t. The p-type conductivity can be maintained after devices fabrication by controlling the resistivity below the critical resistivity corresponding to the oxygen concentration in p-type high-resistivity silicon.

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Integration of cellular front end modules on advanced high resistivity SOI RF CMOS technology

Cited by 4 publications

References 10 publications

Advanced technologies for next‐generation RF front‐end modules

Advanced technologies for next‐generation RF front‐end modules

Enhancing the quality factor of aerosol jet printed RF spiral inductors through gold electroplating

Development of the conductivity type inversion caused by thermal double donors’ formation in p-type high-resistivity silicon

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