Abstract:The formation of thermal double donors (TDDs) during the iso-thermal annealing at 450 ℃ in low-oxygen and high-resistivity silicon was quantitatively investigated, and the oxygen related power parameter x for low-oxygen and high-resistivity silicon was obtained. Excessive TDDs formed in the p-type high-resistivity silicon during the devices manufacturing process will invert the conductivity to n-type. A quantitative relationship between the critical wafer start resistivity and oxygen concentration in p-type hi… Show more
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