Integrated Silicon PIN Photodiodes Using Deep N-Well in a Standard 0.18-$\mu$m CMOS Technology

Çiftçioğlu, Berkehan; Zhang, Lin; Zhang, Jie; Marciante, John R.; Zuegel, J. D.; Sobolewski, Roman; Wu, Hui

doi:10.1109/jlt.2008.2008664

Cited by 34 publications

(22 citation statements)

References 29 publications

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“…Ciftcioglu et al present a new photodiode structure that has a deep n-well in the p-epi-layer below the p-well that is isolated by n-well on both sides, thus creating two vertical p-n junctions [16]. The upper photodiode is a hybrid vertical and lateral p-i-n that gives a quantum efficiency of 20% at λ = 855 nm and is used for on-chip optical communication.…”

Section: Discussionmentioning

confidence: 99%

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Integrated Energy-Harvesting Photodiodes With Diffractive Storage Capacitance

Fong

Guilar

Kleeburg

et al. 2013

IEEE Trans. VLSI Syst.

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Abstract-Integrating energy-harvesting photodiodes with logic and exploiting on-die interconnect capacitance for energy storage can enable new, ultraminiaturized wireless systems. Unlike CMOS imager pixels, the proposed photodiode designs utilize p-diffusion fingers and are implemented in a conventional logic process. Also unlike specialized solar cell processes, the designs utilize the on-chip metal interconnect to form a diffraction grating above the p-diffusion fingers which also provides capacitive energy storage. To explore the tradeoffs between optical efficiency and energy storage for integrated photodiodes, an array of photovoltaics with various diffractive storage capacitors was designed in a 90-nm CMOS logic process. The diffractive effects can be exploited to increase the photodiodes' response to off-axis illumination. Transient effects from interfacing the photodiodes with switched-capacitor DC-DC converters were examined, with measurements indicating a 50% reduction in the output voltage ripple due to the diffractive storage capacitance. A quantitative comparison between 90-nm and 0.35-µm CMOS logic processes for energy-harvesting capabilities was carried out. Measurements show an increase in power generation for the newer CMOS technology, however at the cost of reduced output voltage. One potential application for the integrated photodiodes is harvesting energy for a subdermal biomedical device.

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Section: Discussionmentioning

confidence: 99%

“…Previous works have outlined the use of environmental energy-harvesting for powering wireless systems [4]- [23]. For many wireless systems, photovoltaics (PVs) are a viable source for energy-harvesting [5]- [16]. Integrating the solar energy-harvesting on the same die as other parts of the system enables reduced system cost and size.…”

mentioning

confidence: 99%

Integrated Energy-Harvesting Photodiodes With Diffractive Storage Capacitance

Fong

Guilar

Kleeburg

et al. 2013

IEEE Trans. VLSI Syst.

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“…[9][10][11] In this paper we demonstrate waveguide-integrated lateral silicon PIN photodetectors developed for operation at the wavelength of ∼850nm. The devices are a part of an optical label-free biosensing chip based on whispering-gallery mode (WGM) resonators and integrated low-cost VCSEL diodes as light sources.…”

Section: Introductionmentioning

confidence: 99%

Integrated silicon photodetector for lab-on-chip sensor platforms

et al. 2015

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In this paper we demonstrate design, fabrication and characterization of polycrystalline silicon (poly-Si) photodetectors monolithically integrated on top of a silicon oxynitride (SiON) passive photonic circuit. The devices are developed for operation at the wavelength of ∼850nm. Interdigitated PIN structures were designed and compared with conventional lateral PIN detectors. The devices, fabricated in standard CMOS technology, exhibit low dark current values of few nanoamperes. The best responsivity of 0.33A/W under a reverse bias of 9V was achieved for lateral PIN detectors with 3-µm interelectrode gap, coupled vertically to the optical waveguide. The applicability of devices for lab-on-chip biosensing has been proved by demonstrating the possibility to reproduce the sensor's spectral response.

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“…However, each device type is different and has certain advantages and disadvantages. PIN PDs can be used for detection of light modulated with high frequencies up to several GHz as shown in [2]. This is possible due to a thick low doped epitaxial layer between anode and cathode, which results in a thick space-charge region (SCR) and thus to a larger drift current portion of the resulting photogenerated current.…”

mentioning

confidence: 99%

“…Ref. [2] reports on PIN PD achieving 3.1 GHz with 0.15 A/W @ 15.5 V. However, there are applications which require a high responsivity and a smaller bandwidth. In this case APDs and PTs are more appropriate as they have an inherent current amplification mechanism.…”

mentioning

confidence: 99%

Integrated 180 nm CMOS phototransistors with an optimized responsivity-bandwidth-product

Kostov

Gaberl

Hofbauer

et al. 2012

IEEE Photonics Conference 2012

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A phototransistor with an optimized responsivitybandwidth-product is presented in this paper. The device has a size of 40×40 µm 2 and is implemented in a standard 180 nm CMOS process. By means of a thick low doped p-epitaxial layer starting material (collector), a base formed as striped n-wells and an optimized design of the emitter high responsivity-bandwidthproduct values up to 171.1 A/W*MHz are achieved.

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Integrated Silicon PIN Photodiodes Using Deep N-Well in a Standard 0.18-$\mu$m CMOS Technology

Cited by 34 publications

References 29 publications

Integrated Energy-Harvesting Photodiodes With Diffractive Storage Capacitance

Integrated Energy-Harvesting Photodiodes With Diffractive Storage Capacitance

Integrated silicon photodetector for lab-on-chip sensor platforms

Integrated 180 nm CMOS phototransistors with an optimized responsivity-bandwidth-product

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