“…Recent literature reports indicate that fully integrated electronic solutions for biosensing, dielectric spectroscopy, and near-field imaging functionality are progressively extending into the sub-THz and THz frequency range 12 , 13 . The current status of these developments for biomedical applications one can grasp from the following review 14 . Figure 1 Biosensing based on resonance frequency shift.…”
Recently, plasmonic-based sensors operating in the terahertz frequency range have emerged as perspective tools for rapid and efficient label-free biosensing applications. In this work, we present a fully electronic approach allowing us to achieve state-of-the-art sensitivity by utilizing a near-field-coupled electronic sensor. We demonstrate that the proposed concept enables the efficient implementation and probing of a so-called ultra-strongly coupled sub-wavelength meta-atom as well as a single resonant circuit, allowing to limit the volume of material under test down to a few picoliter range. The sensor has been monolithically integrated into a cost-efficient silicon-based CMOS technology. Our findings are supported by both numerical and analytical models and validated through experiments. They lay the groundwork for near-future developments, outlining the perspectives for a terahertz microfluidic lab-on-chip dielectric spectroscopy sensor.
“…Recent literature reports indicate that fully integrated electronic solutions for biosensing, dielectric spectroscopy, and near-field imaging functionality are progressively extending into the sub-THz and THz frequency range 12 , 13 . The current status of these developments for biomedical applications one can grasp from the following review 14 . Figure 1 Biosensing based on resonance frequency shift.…”
Recently, plasmonic-based sensors operating in the terahertz frequency range have emerged as perspective tools for rapid and efficient label-free biosensing applications. In this work, we present a fully electronic approach allowing us to achieve state-of-the-art sensitivity by utilizing a near-field-coupled electronic sensor. We demonstrate that the proposed concept enables the efficient implementation and probing of a so-called ultra-strongly coupled sub-wavelength meta-atom as well as a single resonant circuit, allowing to limit the volume of material under test down to a few picoliter range. The sensor has been monolithically integrated into a cost-efficient silicon-based CMOS technology. Our findings are supported by both numerical and analytical models and validated through experiments. They lay the groundwork for near-future developments, outlining the perspectives for a terahertz microfluidic lab-on-chip dielectric spectroscopy sensor.
“…resolution has various fields of applications, such as highprecision vibration measurements in industrial scenarios [8], vital sign detection [9], and non-destructive or biomedical spectroscopy [3], [10], [11]. The upcoming sub-terahertz communication standard IEEE 802.…”
This paper presents a broadband low-loss fanin wafer level ball grid
array (WLB) vertical through-moldvia (TMV) interconnect that enables
highly integrated systemin-package (SiP) applications beyond 220 GHz.
The dedicate advantage of the proposed approach is to further minimize
the separation between package components (e.g., antenna in package
(AiP)) and on-chip receiver or transmitter chain. To demonstrate the
robustness of the TMV interconnect design, the necessity for
co-simulation of the integrated circuit (IC) package and the IC itself
during the package-design is shown. Therefore, an in-depth analysis of
the suppression of parasitic mode oscillation inside silicon is carried
out. Furthermore, the parasitic radiation loss at the TMV interconnect
discontinuity is given and a verification of the proposed TMV due to
high agreement of simulation and measurement results is demonstrated.
The interconnect has been verified with a measured 10 dB return loss
bandwidth of 38 GHz and a de-embedded insertion loss of less than 2.8 dB
at 275 GHz, which enables a compact low-loss broadband signal transition
from active IC components in the backend-of-line (BEOL) to passive
components in package. Compared to fan-out WLB, the developed fanin WLB
solution enables higher integration density of active and passive
components with the shortest interconnects for minimal insertion loss.
Thus, the proposed fan-in TMV packaging provides a very compact,
easy-to-assemble and cost-efficient alternative for SiP designs for
future broadband communication and sensing solutions.
“…Recent literature reports indicate that fully integrated electronic solutions for biosensing, dielectric spectroscopy, and near-field imaging functionality are progressively extending into the sub-THz and THz frequency range [12,13]. The current status of these developments for biomedical applications one can grasp from the following review [14].…”
Recently, plasmonic-based sensors operating in the terahertz frequency range have emerged as perspective tools for rapid and efficient label-free biosensing applications. In this work, we present a fully electronic approach allowing us to achieve state-of-the-art sensitivity by utilizing a near-field-coupled electronic sensor. We demonstrate that the proposed concept enables the efficient implementation and probing of a so-called ultra-strongly coupled sub-wavelength meta-atom as well as a single resonant circuit, allowing to limit the volume of material under test down to a few picoliter range. The sensor has been monolithically integrated into a cost-efficient silicon-based CMOS technology. Our findings are supported by both numerical and analytical models and validated through experiments. They lay the groundwork for near-future developments, outlining the perspectives for a terahertz microfluidic lab-on-chip dielectric spectroscopy sensor.
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