Integrated GaN photonic circuits on silicon (100) for second harmonic generation

Xiong, Chi; Pernice, Wolfram H. P.; Ryu, Kevin; Schuck, Carsten; Fong, King Yan; Palacios, Tomás; Tang, Hong X.

doi:10.1364/oe.19.010462

Cited by 194 publications

(145 citation statements)

References 28 publications

Supporting

Mentioning

139

Contrasting

Unclassified

Order By: Relevance

“…The conversion efficiency obtained for GaN here exceeds previous experimental reports of SHG in a GaN PhC cavity by more than two orders of magnitude. 6 It also compares well with phase-matched approaches in GaN ring and disk resonator platforms, 19,20 where experimental normalized conversion efficiency values of 0.3 × 10 3 W 1 and 2 × 10 3 W 1 for SHG can be extracted, respectively. It is expected that further enhancement using a doubly resonant scheme in GaN PhCs could bring the SHG conversion efficiency closer to state-of-the-art ring resonators in AlN, 21 although at the expense of stringent energy and phase matching requirements.…”

Section: Apl Photonics 2 031301 (2017)mentioning

confidence: 65%

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

et al. 2017

View full text Add to dashboard Cite

We report on nonlinear frequency conversion from the telecom range via second harmonic generation (SHG) and third harmonic generation (THG) in suspended gallium nitride slab photonic crystal (PhC) cavities on silicon, under continuous-wave resonant excitation. Optimized two-dimensional PhC cavities with augmented far-field coupling have been characterized with quality factors as high as 4.4 × 104, approaching the computed theoretical values. The strong enhancement in light confinement has enabled efficient SHG, achieving a normalized conversion efficiency of 2.4 × 10−3 W−1, as well as simultaneous THG. SHG emission power of up to 0.74 nW has been detected without saturation. The results herein validate the suitability of gallium nitride for integrated nonlinear optical processing.

show abstract

Section: Apl Photonics 2 031301 (2017)mentioning

confidence: 65%

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Second order optical nonlinearity (χ (2) ) is one of the most widely explored properties in photonics, utilizing various nonlinear materials [8][9][10][11][12][13]. χ (2) nonlinearity enables the coupling between photons with very different colors, acting as the basis for many important applications such as second harmonic generation, spontaneous parametric down conversion, optical parametric amplification and oscillation.…”

mentioning

confidence: 99%

On-Chip Strong Coupling and Efficient Frequency Conversion between Telecom and Visible Optical Modes

et al. 2016

Self Cite

View full text Add to dashboard Cite

Developments in photonic chips have spurred photon based classical and quantum information processing, attributing to the high stability and scalability of integrated photonic devices [1,2]. Optical nonlinearity [3] is indispensable in these complex photonic circuits, because it allows for classical and quantum light sources, all-optical switch, modulation, and non-reciprocity in ambient environments. It is commonly known that nonlinear interactions are often greatly enhanced in the microcavities [4]. However, the manifestations of coherent photon-photon interaction in a cavity, analogous to the electromagnetically induced transparency [5], have never been reported on an integrated platform. Here, we present an experimental demonstration of the coherent photon-photon interaction induced by second order optical nonlinearity (χ (2) ) on an aluminum nitride photonic chip. The non-reciprocal nonlinear optic induced transparency is demonstrated as a result of the coherent interference between photons with different colors: ones in the visible wavelength band and ones in the telecom wavelength band. Furthermore, a wide-band frequency conversion with an almost unit internal (0.14 external) efficiency and a bandwidth up to 0.76 GHz is demonstrated.The importance of integrating nonlinear devices on a photonic chip has become more prominent due to the devices' small foot-prints and large scalability [6,7]. Second order optical nonlinearity (χ (2) ) is one of the most widely explored properties in photonics, utilizing various nonlinear materials [8][9][10][11][12][13]. χ (2) nonlinearity enables the coupling between photons with very different colors, acting as the basis for many important applications such as second harmonic generation, spontaneous parametric down conversion, optical parametric amplification and oscillation. Due to the high quality factor to mode volume ratio, the nonlinear interaction strength is expected to be boosted in optical cavities. Preliminary results in millimeter sized optical resonators have already shown such trend, where efficient second harmonic generation [14,15] and sum frequency generation [16] are demonstrated. However, the realized nonlinear interaction strength on an integrated platform is normally weak, hindered by the challenges of fabricating small size, low loss optical circuits with materials featuring high χ (2) nonlinearity.In this Letter, we demonstrate coherent interaction between photons of different colors on a scalable aluminum nitride-on-insulator [12] chip based on χ (2) optical nonlinearity. The nonlinear optic induced transparency (NOIT), as an analogue to electromagnetically induced transparency resulting from coherent photon-atom [5] or photon-phonon interactions [17][18][19][20], is reported. Due to the inherent phase matching condition, the χ (2) nonlinearity based coherent interaction and the accompanying NOIT phenomenon are non-reciprocal [19,20], which permits future applications such as non-magnetic, ultrafast optical isolators [21][22][23]. We further realize ...

show abstract

“…However, because of a limited bandgap of 1.1 eV silicon is only transparent for wavelengths above 1,100 nm, excluding the entire visible wavelength range which is of major importance for applications in fluorescent imaging and biology. Therefore, alternative material systems with a wider bandgap, such as silicon nitride [15][16][17] , aluminium nitride 18,19 or gallium nitride 20,21 are attracting increasing interest in order to enlarge the wavelength operation range of nanophotonic devices. In addition, novel photonic materials such as diamond 22,23 offer further possibilities by combining a large bandgap of 5.45 eV with attractive material properties, such us high thermal conductivity, chemical inertness and biocompatibility.…”

mentioning

confidence: 99%

Diamond-integrated optomechanical circuits

et al. 2013

View full text Add to dashboard Cite

Diamond offers unique material advantages for the realization of micro-and nanomechanical resonators because of its high Young's modulus, compatibility with harsh environments and superior thermal properties. At the same time, the wide electronic bandgap of 5.45 eV makes diamond a suitable material for integrated optics because of broadband transparency and the absence of free-carrier absorption commonly encountered in silicon photonics. Here we take advantage of both to engineer full-scale optomechanical circuits in diamond thin films. We show that polycrystalline diamond films fabricated by chemical vapour deposition provide a convenient wafer-scale substrate for the realization of high-quality nanophotonic devices. Using free-standing nanomechanical resonators embedded in on-chip Mach-Zehnder interferometers, we demonstrate efficient optomechanical transduction via gradient optical forces. Fabricated diamond resonators reproducibly show high mechanical quality factors up to 11,200. Our low cost, wideband, carrier-free photonic circuits hold promise for all-optical sensing and optomechanical signal processing at ultra-high frequencies.

show abstract

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

Cited by 194 publications

References 28 publications

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon

On-Chip Strong Coupling and Efficient Frequency Conversion between Telecom and Visible Optical Modes

Diamond-integrated optomechanical circuits

Contact Info

Product

Resources

About