Insulator-metal transition driven by change of doping and spin-orbit interaction in Sr<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>2</mml:mn></mml:msub></mml:math>IrO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn>4</mml:mn></mml:msub></mml:math>

Lee, J. S.; Krockenberger, Yoshiharu; Takahashi, Kei; Kawasaki, Masashi; Tokura, Y.

doi:10.1103/physrevb.85.035101

Cited by 78 publications

(82 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The structural and magnetic similarities between these compounds have led to natural associations with superconductivity, and recent theoretical proposals 7,8 have spurred renewed interest in the properties of doped Sr 2 IrO 4 . Although many forms of electron, hole, and isoelectronic doping have been experimentally tested to date [9][10][11][12][13][14][15][16][17][18][19][20] , there is still much to learn about the impact of doping on the spin-orbital Mott insulating ground state. Sr 2 Ir 1−x Rh x O 4 represents an ideal candidate for experimental doping studies.…”

Section: Introductionmentioning

confidence: 99%

Dilute magnetism and spin-orbital percolation effects inSr2Ir1−xRhx
Clancy
¹
,
Lupascu
²
,
Gretarsson
³

et al. 2014
Phys. Rev. B
95
9
127
0
View full text Add to dashboard Cite

We have used a combination of resonant magnetic x-ray scattering (RMXS) and x-ray absorption spectroscopy (XAS) to investigate the properties of the doped spin-orbital Mott insulator Sr2Ir1−xRhxO4 (0.07 ≤ x ≤ 0.70). We show that Sr2Ir1−xRhxO4 represents a unique model system for the study of dilute magnetism in the presence of strong spin-orbit coupling, and provide evidence of a doping-induced change in magnetic structure and a suppression of magnetic order at xc ∼ 0.17. We demonstrate that Rh-doping introduces Rh 3+ /Ir 5+ ions which effectively hole-dope this material. We propose that the magnetic phase diagram for this material can be understood in terms of a novel spin-orbital percolation picture.

show abstract

Section: Introductionmentioning

confidence: 99%

Dilute magnetism and spin-orbital percolation effects inSr2Ir1−xRhx
Clancy
¹
,
Lupascu
²
,
Gretarsson
³

et al. 2014
Phys. Rev. B
95
9
127
0
View full text Add to dashboard Cite

show abstract

“…In one of the first studies, Lee and coworkers conducted a systematic investigation of La, Rh, and Ru doping in Sr 2 IrO 4 by means of optical spectroscopy and found that the J eff = 1/2 state remains spectroscopically robust upon doping and that in all cases doping induces an insulator-to-metal transition (IMT) for moderately low dopant concentrations (≈ 5%) [19]. They have also suggested that the IMT is associated with subtle alterations of the strength of U and SOC [19].…”

Section: Introductionmentioning

confidence: 99%

Electron and hole doping in the relativistic Mott insulator Sr2IrO4 : A first-principles study using band unfolding technique

et al. 2016

View full text Add to dashboard Cite

We study the effects of dilute La and Rh substitutional doping on the electronic structure of the relativistic Mott insulator Sr 2 IrO 4 using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site Hubbard U (DFT+U+SOC). To model doping effects, we have adopted the supercell approach, that allows for a realistic treatment of structural relaxations and electronic effects beyond a purely rigid band approach. By means of the band unfolding technique we have computed the spectral function and constructed the effective band structure and Fermi surface (FS) in the primitive cell, which are readily comparable with available experimental data. Our calculations clearly indicate that La and Rh doping can be interpreted as effective electron and (fractional) hole doping, respectively. We found that both electron and hole doping induce an insulating-to-metal transition (IMT) but with different characteristics. In Sr 2−x La x IrO 4 the IMT is accompanied by a moderate renormalization of the electronic correlation substantiated by a reduction of the effective on-site Coulomb repulsion U − J from 1.6 eV (x = 0) to 1.4 eV (metallic regime x = 12.5%). The progressive closing of the relativistic Mott gap leads to the emergence of connected elliptical electron pockets at (π/2,π/2) and less intense features at X in the Fermi surface. The average ordered magnetic moment is slightly reduced upon doping but the canted antiferromagnetic state is perturbed in the Ir-O planes located near the La atoms. The substitution of Ir with the nominally isovalent Rh is accompanied by a substantial hole transfer from the Rh site to the nearest neighbor Ir sites. This shifts down the chemical potential, creates almost circular disconnected hole pockets in the FS and establishes the emergence of a two-dimensional metallic state formed by conducting Rh-planes intercalated by insulating Ir-planes. Finally, our data indicate that hole doping causes a flipping of the in-plane net ferromagnetic moment in the Rh plane and induces a magnetic transition from the AF-I to the AF-II ordering.

show abstract

“…In this context, various experimental attempts have been performed to achieve the effective carrier doping of Sr 2 IrO 4 [14][15][16][17][18][19][20] . So far, one of the most promising progresses is the try of surface electron doping of Sr 2 IrO 4 via in-situ potassium deposition, in which Fermi arcs and pseudogap behavior have been reported 21 ; nevertheless, this finding is not consistent with the reports on the sibling La-doped Sr 3 Ir 2 O 7 , in which only small Fermi pockets rather than Fermi arcs were revealed 22,23 .…”

mentioning

confidence: 99%

Tuning the Electronic Structure of Sr ₂ IrO ₄ Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy

Liu

Yang

et al. 2015

Chinese Phys. Lett.

View full text Add to dashboard Cite

By means of oxide molecular beam epitaxy with shutter-growth mode, we have fabricated a series of electrondoped (Sr 1−x La x ) 2 IrO 4 (001) (x = 0, 0.05, 0.1 and 0.15) single crystalline thin films and then investigated the doping dependence of electronic structure utilizing in-situ angle-resolved photoemission spectroscopy. We find that with increasing doping proportion, the Fermi levels of samples progressively shift upward. Prominently, an extra electron pocket crossing the Fermi level around the M point has been evidently observed in 15% nominal doping sample. Moreover, bulk-sensitive transport measurements confirm that doping effectively suppresses the insulating state with respect to the as-grown Sr 2 IrO 4 , though doped samples still remain insulating at low temperatures due to the localization effect possibly stemming from disorders including oxygen deficiencies. Our work provides another feasible doping method to tune electronic structure of Sr 2 IrO 4 . 71.30.+h, 73.20.r, 77.55.Px 5d transition-metal oxides (TMOs) have recently drawn a lot of attention. In these compounds, the complicated interplay between spin-orbit coupling (SOC) and electron correlations has been suggested to host multiple novel quantum states, including topological Mott insulators 1 , Weyl semimetals 2,3 , axion insulators 4,5 , and spin liquids 6-8 . These studies were mostly initialized by the pioneering experiments on the prototype layered perovskite Sr 2 IrO 4 , in which the strong SOC was revealed to lift the orbital degeneracy and then result in a narrow half-filled J e f f = 1/2 band that even the relatively weak Coulomb repulsion of 5d electrons could induce a Mott metal-insulator transition (MIT) therein 9,10 . Scattering experiments discovered that, this Mott insulator, showing an effective pseudospin 1/2 antiferromagnetic (AFM) order at low temperature, can be well described by the Heisenberg model with an exchange coupling of 60 to 100 meV 11,12 . Such findings indicate that the low-energy behavior of this single-layer iridate rather resembles that of cuprates. Consequently, it is tempting to investigate the carrier doping of Sr 2 IrO 4 , which might pave the way to discover a new family of unconventional superconductors. Indeed, a recent theoretical work has predicted the unconventional superconductivity in the electron-doped Sr 2 IrO 4 13 .In this context, various experimental attempts have been performed to achieve the effective carrier doping of Sr 2 IrO 4 14-20 . So far, one of the most promising progresses is the try of surface electron doping of Sr 2 IrO 4 via in-situ potassium deposition, in which Fermi arcs and pseudogap behavior have been reported 21 ; nevertheless, this finding is not consistent with the reports on the sibling La-doped Sr 3 Ir 2 O 7 , in which only small Fermi pockets rather than Fermi arcs were revealed 22,23 . This controversy naturally raises one open question, namely, whether the existence of Fermi arcs is an universal property of the electron-doped iridates irrespective of the specifi...

show abstract

Insulator-metal transition driven by change of doping and spin-orbit interaction in Sr2IrO4

Cited by 78 publications

References 31 publications

Dilute magnetism and spin-orbital percolation effects inSr2Ir1−xRhx
Clancy
¹
,
Lupascu
²
,
Gretarsson
³

et al. 2014
Phys. Rev. B
95
9
127
0
View full text Add to dashboard Cite

Dilute magnetism and spin-orbital percolation effects inSr2Ir1−xRhx
Clancy
¹
,
Lupascu
²
,
Gretarsson
³

et al. 2014
Phys. Rev. B
95
9
127
0
View full text Add to dashboard Cite

Electron and hole doping in the relativistic Mott insulator Sr2IrO4 : A first-principles study using band unfolding technique

Tuning the Electronic Structure of Sr ₂ IrO ₄ Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy

Contact Info

Product

Resources

About

Insulator-metal transition driven by change of doping and spin-orbit interaction in Sr2IrO4

Cited by 78 publications

References 31 publications

Dilute magnetism and spin-orbital percolation effects inSr2Ir1−xRhxClancy1, Lupascu2, Gretarsson3 et al. 2014Phys. Rev. B9591270View full textAdd to dashboardCite

Dilute magnetism and spin-orbital percolation effects inSr2Ir1−xRhxClancy1, Lupascu2, Gretarsson3 et al. 2014Phys. Rev. B9591270View full textAdd to dashboardCite

Electron and hole doping in the relativistic Mott insulator Sr2IrO4 : A first-principles study using band unfolding technique

Tuning the Electronic Structure of Sr 2 IrO 4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy

Contact Info

Product

Resources

About

Dilute magnetism and spin-orbital percolation effects inSr2Ir1−xRhx
Clancy
¹
,
Lupascu
²
,
Gretarsson
³

et al. 2014
Phys. Rev. B
95
9
127
0
View full text Add to dashboard Cite

Dilute magnetism and spin-orbital percolation effects inSr2Ir1−xRhx
Clancy
¹
,
Lupascu
²
,
Gretarsson
³

et al. 2014
Phys. Rev. B
95
9
127
0
View full text Add to dashboard Cite

Tuning the Electronic Structure of Sr ₂ IrO ₄ Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy