2016
DOI: 10.1103/physrevb.94.195145
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Electron and hole doping in the relativistic Mott insulator Sr2IrO4 : A first-principles study using band unfolding technique

Abstract: We study the effects of dilute La and Rh substitutional doping on the electronic structure of the relativistic Mott insulator Sr 2 IrO 4 using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site Hubbard U (DFT+U+SOC). To model doping effects, we have adopted the supercell approach, that allows for a realistic treatment of structural relaxations and electronic effects beyond a purely rigid band approach. By means of the band unfolding technique we have co… Show more

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Cited by 31 publications
(33 citation statements)
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“…This observation was attributed to the reduction of the on-site Coulomb repulsion U . However, the first-principles calculation study pointed out that U did not change noticeably at low dopings and could only be fully suppressed upon 80% electron doping 34 . Another ARPES study showed that the J eff  = 1/2 bands were consistently separated upon electron doping.…”
Section: Resultsmentioning
confidence: 94%
“…This observation was attributed to the reduction of the on-site Coulomb repulsion U . However, the first-principles calculation study pointed out that U did not change noticeably at low dopings and could only be fully suppressed upon 80% electron doping 34 . Another ARPES study showed that the J eff  = 1/2 bands were consistently separated upon electron doping.…”
Section: Resultsmentioning
confidence: 94%
“…This is contrary to the electrondoped system, where we observed the emergence of an in-gap state whose momentum distribution is different from UHB. This electron-hole asymmetry in the emergence of an in-gap state upon carrier doping has been reproduced by a first principles study [29], except for the existence of an anisotropic gap [30] and a remnant Fermi surface. In the lightly hole-doped sample of Sr 2 Ir 1−x Rh x O 4 , x = 0.04, LHB lies just below E F with energy gaps in the entire k region and with an anisotropy similar to a higher hole doping.…”
mentioning
confidence: 92%
“…Assuming λ SOC and Δ c are sufficiently large compared to the relevant bandwidths when Sr 2 IrO 4 crystalizes, a single J eff ¼ 1=2 band is half filled and can be driven by a moderate local Coulomb repulsion U to an AFM Mott insulating state [1,2,7]. The nature of the spin-orbit entangled insulating state has been studied using the localized picture based on the J eff ¼ 1=2 pseudospin anisotropic Heisenberg model [7][8][9][10][11], the three-orbital Hubbard model for the t 2g electrons with SOC [12][13][14][15], and the microscopic correlated density functional theory such as the LDA þ U and GGA þ U [1,[16][17][18]. Moreover, carrier doping the AFM insulating state was proposed to potentially realize a 5d t 2g -electron analog of the 3d e g -electron high-T c cuprate superconductors [8,12,13,19,20].…”
mentioning
confidence: 99%