Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices

Hayashi, Toshihiko; Izumi, Teruo; Hemmi, Tetsuro; Asano, Kōichi

doi:10.4028/www.scientific.net/msf.740-742.1036

Cited by 7 publications

(3 citation statements)

References 6 publications

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“…Resin [7] In order to investigate the long-term stability of packages with high heat-resistant resins for ultrahigh voltage SiC devices at high temperature, three types of resin (nano-tech resin (Resin A), improved resin (Resin B), and commercially available resin (Resin C)) were evaluated. Resin A and Resin B were produced by ADEKA Corporation.…”

Section: Package Technologymentioning

confidence: 99%

Ultrahigh voltage SiC bipolar devices

Fukuda

Okamoto

Harada

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (R diff,on ) at high temperature. Moreover, the results reveal that the nano-tech resin, improved resin and Si 3 N 4 DBC substrate are the best materials for package at high temperature and ultrahigh voltage.

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Section: Package Technologymentioning

confidence: 99%

Ultrahigh voltage SiC bipolar devices

Fukuda

Okamoto

Harada

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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“…In order to evaluate the switching characteristics of the IE-IGBT, ultrahigh-voltage power modules were assembled [12]. The power module consisted of a tungsten base plate, a direct bonded copper (DBC) base with Si3N4, and a copper electrode.…”

Section: Dynamic Characteristicsmentioning

confidence: 99%

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Yonezawa

Mizushima

Takenaka

et al. 2015

MSF

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Ultrahigh-voltage SiC flip-type n-channel implantation and epitaxial (IE)-IGBTs were developed, and the static and dynamic performance was investigated. A large device (8 mm × 8mm) with a blocking voltage greater than 16 kV was achieved, and an on-state current of 20 A was obtained at the low on-state voltage (Von) of 4.8 V. RonAdiff was 23 mΩ·cm2 at Von = 4.8 V. In order to evaluate the switching characteristics of the IE-IGBT, ultrahigh-voltage power modules were assembled. A chopper circuit configuration was used to evaluate the switching characteristics of the IE-IGBT. Smooth turn-off waveforms were successfully obtained at VCE = 6.5 kV and ICE = 60 A in the temperature range from room temperature to 250°C.

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“…Furthermore, development of ultrahigh-voltage packages is another challenge. Although some packages and modules with special insulating materials have been reported for such high-voltage devices [25,26], the ultrahigh-voltage package technology is still not mature.…”

Section: Of 15mentioning

confidence: 99%

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

et al. 2016

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Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

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Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices

Cited by 7 publications

References 6 publications

Ultrahigh voltage SiC bipolar devices

Ultrahigh voltage SiC bipolar devices

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

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