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A retrograded doping profile(RDP) is directly introduced into the lateral diffused channel region for an insulated gate bipolar transistor (RDP-LIGBT) on silicon-oninsulator (SOI) substrate to improve its current capability and robustness. The profile is implemented by ion-implantation with energy less than 180KeV before gate oxidation. The threshold voltage is well controlled by considering the mask proximity effect (MPE). The new LIGBT has a current capability of 1.2-1.6 times larger than that of its conventional counterpart. Its shortcircuit capability is 1.2J/cm2, while its conventional counterpart's is 0.192J/cm2, at a voltage of 180-210V and a current density of 1.4KA/cm 2 .